Silver selenide telluride Semiconducting (Ag2Se0.8Te0.2) thin films were by thermal evaporation at RT with thickness350 nm at annealing temperatures (300, 348, 398, and 448) °K for 1 hour on glass substrates .using X-ray diffraction, the structural characteristics were calculated as a function of annealing temperatures with no preferential orientation along any plane. Atomic force microscopy (AFM) and X-ray techniques are used to analyze the Ag2SeTe thin films' physical makeup and properties. AFM techniques were used to analyze the surface morphology of the Ag2SeTe films, and the results showed that the values for average diameter, surface roughness, and grain size mutation increased with annealing temperature (116.36-171.02) nm The transm

In this work, the effect of atomic ratio on structural and optical properties of SnO₂/In₂O₃ thin films prepared by pulsed laser deposition technique under vacuum and annealed at 573K in air has been studied.  Atomic ratios from 0 to 100% have been used. X-ray diffraction analysis has been utilized to study the effect of atomic ratios on the phase change using XRD analyzer and the crystalline size and the lattice strain using Williamson-Hall relationship. It has been found that the ratio of 50% has the lowest crystallite size, which corresponds to the highest strain in the lattice. The energy gap has increased as the atomic ratio of indium oxide increased.

CZTS / CdS / ZnO / ITO solar cell was studied using Solar Cell Capacitance Simulato-1D (SCAPS-1D) program. We performed an improvement on the theoretical cell by increasing the doping and thickness of some layers. As a result, the efficiency was shifted from 2.18% to 6.17% and several back reflection layers (BSL) were introduced on the enhanced cell until. We obtained a highest conversion efficiency of 13.99%.  The best reflection layer (CZTSSe) was combined with the best buffer layer (CdSe), with thickness of 0.9µm, on the enhanced cell. Thereby, we obtained a cell with a conversion efficiency of 16.53%. A second improvement was made to the best obtained cell, where the CZTSSe with thickness of 0.05µm and the CdSe with thickness

Obliquely deposited (70o) Bi, Sb, and Bi-Sb alloy thin films have been prepared by thermal
resistive technique. Structural properties of these films were studied using XRD. Their resistance and
voltage responsivity for Nd:YAG and CO2 laser pulses have been recorded as function of operating
temperature between 10 oC and 120 oC. It was found that the maximum responsivity for these detectors
can be obtained at 75 oC. On the other hand, the dependence of responsivity on the width of detectors was
investigated.

In this work, Titanium oxide thin films doped with different concentration of CuO (0,5,10, 15,20) %wt were prepared by pulse laser deposition(PLD) technique on glass substrates at room temperature with constant deposition parameter such as : pulse (Nd:YAG), laser with λ=1064 nm, constant energy 800 mJ , repetition rate 6 Hz and No. of pulse (500). The structure , optical and electrical properties were studied . The results of X-ray diffraction( XRD) confirmed that the film grown by this technique have good crystalline tetragonal mixed anatase and rutile phase structure, The preferred orientation was along (110) direction for Rutile phase. The optical properties of the films were studied by UV-VIS spectrum in the range of (360-1100)

 In this work silicon solar cell has been used with semicircular grooves to improve its efficiency by reducing reflection of rays and increasing optical path through the cell. Software program for optical design (zemax) has been used by ray tracing mode to evaluate prototype efficiency when using detector beneath the cell. The prototype has aspect ratio (A.R=0.2) which is the best efficiency at incident angle (Ï´=0ͦ) and the best acceptance angle (Ï´=50ͦ). 

  Hetero junctions are fabricated by depositing antimony (Sb) and Al films on n-type single crystal(c-Si) wafers by the method of vacuum evaporation with thickness (0.25µm), with rate of deposition equals to 2.77 Ã…/sec, all samples are annealed in a vacuum for one hour at 473K. The tests have shown that all the films have polycrystalline structure for all Sb films. The barrier heights in (Sb/c-Si) junction was found to be equal 0.825eV, but(Al/c-Si) junction ohmic contact. Current-voltage measurements confirm this behaviour.

The paper presents the design of a system consisting of a solar panel with Single Input/Multiple Outputs (DC-DC) Buck Converter by using Simulink dialogue box tools in MATLAB software package for simulation the system. Maximum Power Point Tracking (MPPT) technique depending on Perturb and Observe (P&O) algorithm is used to control the output power of the converter and increase the efficiency of the system. The characteristics of the MSX-60 PV module is chosen in design of the system, whereas the electrical characteristics (P-V, I-V and P-I curves) for the module are achieved, that is affected by the solar radiation and temperature variations. The proposed design module has been found to be stable for any change in atmospheric tempera