In this work the parameters of plasma (electron temperature Te,
electron density ne, electron velocity and ion velocity) have been
studied by using the spectrometer that collect the spectrum of
plasma. Two cathodes were used (Si:Si) P-type and deposited on
glass. In this research argon gas has been used at various values of
pressures (0.5, 0.4, 0.3, and 0.2 torr) with constant deposition time
4 hrs. The results of electron temperature were (31596.19, 31099.77,
26020.14 and 25372.64) kelvin, and electron density (7.60*1016,
8.16*1016, 6.82*1016 and 7.11*1016) m-3. Optical properties of Si
were determined through the optical transmission method using
ultraviolet visible spectrophotometer with in the range
(

    In this present paper,  an experimental study of some plasma characteristics in dielectric barrier discharge (DBD) system using several variables, such as different frequencies and using two different electrodes metals(aluminium (Al) and copper (Cu)), is represented. The discharge plasma was produced by an AC power supply source of 6 and 7 kHz frequencies for the nitrogen gas spectrum and for two different electrodes metals(Al and Cu). Optical emission spectrometer was used to study plasma properties (such as electron temperature ( ), electron number density ( ), Debye length ( ), and plasma frequency ( )). In addition, images were analysed for the plasma emission intensity at atmospheric air pressure.

In the present work, the effect of isolated dust particles (FeO) with radius of the grain 0.1μm - 0.5μm of main plasma characteristics are investigated experimentally in direct current system by using magnetic field. The present of dust particle in the air plasma did effect on Paschen minimum and on the plasma properties in low pressure region. The effect of dust particles on discharge voltage, discharge current, plasma potential, floating potential, electron density, electron temperature and Debye length was investigation by using magnetic field. The measurements of parameters are taken by four cylindrical Langmuir probes. The results show the present of dust causes decreasing in discharge voltage with increase pressure while the disc

DC planar sputtering system is characterized by varying discharge potential of (250-2000 volt) and Argon gas pressures of (3.5×10-2 – 1.5) mbar. The breakdown voltage for silver electrode was studied with a uniform electric field at different discharge distances, as well as plasma parameters. The breakdown voltage is a product of the Argon gas pressure inside the chamber and gab distance between the electrodes, represent as Paschen curve. The Current-voltage characteristics curves indicate that the electrical discharge plasma is working in the abnormal glow region. Plasma parameters were found from the current-voltage characteristics of a single probe positioned at the inter-cathode space. Typical values of the electron temperature an

Cadmium oxide thin films were prepared by D.C magnetron plasma sputtering using different voltages (700, 800, 900, 1000, 1100 and 1200) Volt. The Cadmium oxide structural properties using XRD analysis for just a voltage of 1200 volt at room temperature after annealing in different temperatures (523 and 623) K were studied .The results show that the films prepared at room temperature have some peaks belong to cadmium element along the directions (002), (100), (102) and (103) while the other peaks along the directions of (111), (200) and (222) belong to cadmium oxide. Annealed samples display only cadmium oxide peaks. Also, the spectroscopic properties of plasma diagnostic for CdO thin films were determined and the results show that the el

The influence of the reaction gas composition during the DC magnetron sputtering process on the structural, chemical and optical properties of Ce-oxide thin films was investigated. X-ray diffraction (XRD) studies confirmed that all thin films exhibited a polycrystalline character with cubic fluorite structure for cerium dioxide. X-ray photoelectron spectroscopy (XPS) analyses revealed that cerium is present in two oxidation states, namely as CeO2 and Ce2O3, at the surface of the films prepared at oxygen/argon flow ratios between 0% and 7%, whereas the films are completely oxidized into CeO2 as the aforementioned ratio increases beyond 14%. Various optical parameters for the thin films (including an optical band gap in the range of 2.25–3.

TiO2 thin films were deposited by reactive d.c magnetron sputtering method on a glass substrate with various ratio of gas flow (Oxygen /Argon) (50/50, 100/50 and 150/50) at substrate temperature 573K. It can be observe that the optical energy gap of TiO2 thin films dependent on the ratio of gas flow (oxygen/argon), it varies between (3.45eV-3.57eV) also it is seen that the optical constants (α, n, K, εr and εi ) has been varied with the change of the ratio of gas flow (Oxygen /Argon).

     In this work, the electrical properties and optimum conditions of the plasma sputtering system have been studied. The electrical properties such as Paschen's curve, current-voltage, current pressure relations, the strength of magnetic field as a function of inter-electrode distance, the influence of gas working pressure and argon-oxygen ratio on the electrical characterization were studied to determine the basic optimum condition of the system operation. the discharge current as a function of discharge voltage showed high discharge current at 2.5 cm.  These parameters represent the basic conditions to operate any plasma sputtering system which are the right behavior to build up and design the discharge an el

     In this work, lead oxide (PbO) thin films were deposited using D.C. sputtering method on a surface of glass substrates and then thermally annealed at a temperature of 473K with annealing times of (1,2 and 3) hours. The structural, morphological, and optical properties of films were determined using X-ray diffraction (XRD), atomic force microscopy (AFM), FT-IR, and UV-Visible spectroscopy. The structure studies confirmed that PbO films are polycrystalline structures in an orthorhombic phase with average grain size (24.51, 29.64, 46.49, 16) nm with increasing annealing time. From AFM, the roughness of the film surface  (3.26, 1.76, 1.61, 1.79) nm as the film annealing time increases. The optical band gap values of the PbO thin fi