A polycrystalline PbxS1-x alloys with various Pb content ( 0.54 and 0.55) has been prepared successfully. The structure and composition of alloys are determined by X-ray diffraction (XRD), atomic absorption spectroscopy (AAS) and X-ray fluorescence (XRF) respectively. The X-ray diffraction results shows that the structure is polycrystalline with cubic structure, and there are strong peaks at the direction (200) and (111), the grain size varies between 20 and 82 nm. From AAS and XRF result, the concentrations of Pb content for these alloys were determined. The results show high accuracy and very close to the theoretical values. A photoconductive detector as a bulk has been fabricated by taking pieces of prepared alloys and polished chemic

In this research, porous silicon (PS) prepared by anodization etching on surface of single crystalline p-type Si wafer, then Gold nanoparticle (AuNPs) prepared by pulsed laser ablation in liquid. NPs deposited on PS layer by drop casting. The morphology of PS, AuNPs and AuNPs/PS samples were examined by AFM. The crystallization of this sample was characterized by X-ray diffraction (XRD). The electrical properties and sensitivity to CO2 gas were investigated to Al/AuNPs/PS/c-Si/Al, we found that AuNPs plays crucial role to enhance this properties.

       The dielectric properties of polyvinyl chloride (PVC)-MnCl2 composite were studied by using the impedance technique. The measurements were carried out as a function of frequency in the range from 10 Hz to 13 MHz and temperature range from 27oC to 55oC. Using a composite of 20 wt. % MnCl2 by weight, it was found that the dielectric constants and the dielectric loss of the prepared films increase with the increasing temperature at law frequency and the enhancement of the ionic conduction which is confirmed by the increase the of AC. conductivity and the decrease of the activation energy of the conduction mechanism at high applied frequency. The observed relaxation and polarization effects of composite a

Nano-silver oxide thin films with high sensitivity for NH3 gas were deposited on glass substrates by the chemical bath deposition technique. The preparations were made under different values of pH and deposition time at 70áµ’ C, using silver nitrate AgNO3 and triethanolamine. XRD analysis showed that all thin films were
polycrystalline with several peaks of silver oxides such as Ag2O, AgO and Ag3O4, with an average crystallite size that ranged between 31.7 nm and 45.8 nm, depending on the deposition parameters. Atomic force microscope (AFM) technique illustrated that the films were homogenous with different surface roughness and the
grain size ranged between 55.69 nm and 86.23 nm. The UV-Vis spectrophotometer showed that the op

Blends of Polymethyl methacrylate (PMMA)/polyvinyl alcohol (PVA) doped with 2% weight percentage of Sn were prepared with different blend ratios using casting technique. The measurements of A.C conductivity σa.c within the frequency range (25kHz – 5MHz) of undoped and Sn doped PMMA/PVA blends obeyed the relationship σ= Aw^s were the value of s within the range 0 > s > 1. The results showed that σa.c increases with the increase of frequency. The exponent s showed preceding increase with the increase of PVA content for PMMA/PVA blends doped with Sn. The dielectric constant, dielectric loss, A.C electrical conductivity are varied with the concentration of PVA in the blend and frequency of applied electrical field.

Polycrystalline Indium oxide (In2O3) and Indium oxide-zinc oxide (IZO) thin films mixed with 10% ZnO content were prepared by spray-pyrolysis technique at relatively low substrate temperature (150 ˚C).Field emission scanning electron microscope (FE-SEM) shows that the nanostructure at 10% ZnO content has pyramid like structure. The hall effect measurements show that the prepared samples have n-type charge carriers .The films were examined as gas sensor against H2S gas at different operating temperatures (200, 250 and 300) oC, and it was found that the IZO sample a good sensitivity to H2S gas ~ 572 % at operating temperature 200 oC, with relatively fast response time of 19 s and recovery time of 17

The effect of the annealing on the optical transmission , absorp tion coefficient,
dielectric constants (ε
r
),( ε
i
) ,Skin depth and the optical ener gy gap of (ZnO)x(CdO)1-x thin
films with (x=0.05) deposited on preheated glass substrates at a temperature of (450 C°) by
chemical pyrolysis technique were performed . These f ilms show direct allowed inter band
transition that influenced by annealing at ( 450 C°) for two hours . And it also found that the
optical ener gy gap has been increased fro m about (2.50 eV) before annealing to about (2.65
eV) after annealing , fro m the analysis of the absorp tion and transmission sp ectra in the
wavelength range (380-900nm) . The results show t

Thin films of GexS1-x were fabricated by thermal evaporating under vacuum of 10-5Toor on glass substrate. The effect of increasing of germanium content (x) in sulfide films on the electrical properties like d.c conductivity (σDC), concentration of charge carriers (nH) and the activation energy (Ea) and Hall effect were investigated. The measurements show that (Ea) increases with the increasing of germanium content from 0.1to0.2 while it get to reduces with further addition, while charge carrier density (nH) is found to decrease and increase respectively with germanium content. The results were explained in terms of creating and eliminating of states in the band gap