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The Effect of Cadmium Selenide Thin Film Thickness on Carbon Monoxide Gas Sensing Properties prepared by Plasma DC-Sputtering Technique
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     Cadmium Selenide (CdSe) thin films have been deposited on a glass substrate utilizing the plasma DC-sputtering method at room temperature at different deposition time in order to achieve different films thickness, and studied its sensitivity to the  carbon monoxide CO gas which are show high response as the film thickness increases, the DC-conductivity and photoconductivity are also studied and which are increased too as the film thickness increases, that indicates the good semiconducting behavior at room  temperature and light environments.

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Publication Date
Wed Jul 29 2020
Journal Name
Iraqi Journal Of Science
Effect of Adding Coumarin Dye on Physical Properties of Blend (PC-PS) Film: Dye doped Blend polymer
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Pure blend (PC-PS) and doped blend films with various volume ratio of Coumarin dye were prepared by using casting method. The absorption and transmission spectra for these films were measured using UV/VIS spectrometer technique in order to assessment the type of transition which was found to be indirect transition. The optical energy gap of pure PC was (4.24) eV, pure PS was (4.39) eV, Coumarin dye was (4.08) eV, and pure blend was (4.1) eV. After doping blend with Coumarin dye; the energy gap decreases by (0.06) eV in volume ratio (12) ml. The results showed that absorption coefficient and refractive index affects by doping. When adding the Coumarin dye to the pure blend with different concentrations (12, 24, 36, and 48) ml, the FTIR sp

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Publication Date
Fri Jul 01 2022
Journal Name
Iraqi Journal Of Science
Preparation and Characterization of Nickel Oxide Thin Films by Electrostatic Spray Technique
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A simple, inexpensive, and home–built electrostatic spray deposition (ESD) system with stable cone-jet mode was used to obtain nickel oxide (NiO) thin films on glass substrates kept at temperature of 400°C. The primary precursor solution of 0.1 M concentration hydrated nickel chloride dissolved in isopropyl alcohol. The structural, optical and electrical parameters were studied. The optical absorbance spectra for the studied samples showed its maximum around 280 nm. On the other hand, thickness interferometry measurements on the tested samples showed that film thickness was around 400 nm. The optical energy gap of the prepared NiO samples was determined to be 3.75 eV and the maximum value of refractive index was determined to be 2.1 a

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Publication Date
Wed Jan 01 2014
Journal Name
Journal Of The College Of Basic Education
Effect of annealing temperature on Structural and Optical properties of amorphous Selenium thin films
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Publication Date
Thu Mar 09 2017
Journal Name
Ibn Al-haitham Journal For Pure And Applied Sciences
Effect of Gamma Ray Irradiation on Structural and Optical Properties of ZnO Thin Films
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In this research, the structural and optical measurements were made on the Zinc oxide (ZnO) films prepared by two methods once by using chemical spray pyrolysis technique, and another by using thermal evaporation technique before and after irradiation by Gamma –Ray (γ – rays) from source type (Cs 137) with an energy (0.611)MeV as a function of gamma dose (0.15,0.3 and 0.45) Gy. The thickness of all films prepared by two method was about (300 ± 50) nm. XRD is used to characterize the structural properties, the results demonstrated that all samples prepared by two method before and after irradiation have polycrystalline structure with a preferred orientation (002).Also it showed that the structural properties are weakly

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Publication Date
Mon Aug 01 2016
Journal Name
Indian Journal Of Natural Sciences
Effect of Gamma Radiation on the A.C Electrical and Dielectric Properties of Prepared Pure and Doped Polyaniline Salt
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Purepolyaniline and doped with hydrochloric acid was prepared in different molarities at room temperature. The a.c electrical properties were stadied.AC conductivityσac (ω), is found to vary as ωS in the frequency range (100Hz-10MH), S< 1and decreases indicating a dominate hopping process. Thedielectric constant ε1and dielectric loss ε2 have been determined for bulk polyaniline. ε1 decrease with the increase frequency. Electrical conductivity measurements increase with the increases both of the amount of HCl and the dose of radiation. The dielectric investigations show decrease with dose radiation.

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Publication Date
Thu Jun 30 2022
Journal Name
Iraqi Journal Of Science
Spectroscopic Diagnosis of Arc Carbon and Magnesium Plasma
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      This research aims to investigate parameters for magnesium (Mg)  carbon (C), and carbon/magnesium plasma produced by the exploding electrical wire (EEW) technique. In this work, C and Mg nanoparticles were synthesized. The plasma spectra with three different current values (50, 75 and 100A) were recorded using optical emission spectroscopy (OES). The plasma electron temperature (Te), electron density (ne), plasma frequency (fp), Debye length (ℷD), and Debye number (ND) provided by arc discharge plasma were  calculated. Boltzmann plots were  used to calculate the electron temperature (Te); electron density (ne) was calculated by Stark broadening . The results showed that the electron temperature and electron density increa

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Publication Date
Wed Feb 02 2022
Journal Name
Journal Of Physics: Conference Series
Studying the parameters effect of the sputtering yield for polypropylene bombarding by ions of atmospheric background gases
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Publication Date
Sun Jan 12 2014
Journal Name
International Journal Of Current Engineering And Technology
The Effect of Sb Dopant and Annealing Temperature on the Structural and Optical Properties of GeSe Thin Films
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The pure and Sb doped GeSe thin films have been prepared by thermal flash evaporation technique. Both the structural and optical measurement were carried out for as deposited and annealed films at different annealing temperatures.XRD spectra revealed that the all films have one significant broad amorphous peak except for pure GeSe thin film which annealed at 573 K, it has sharp peak belong to orthorhombic structure nearly at 2θ=33o. The results of the optical studies showed that the optical transition is direct and indirect allowed. The energy gap in general increased with increasing annealing temperature and decreased with increase the ratio of Sb dopant. The optical parameters such as refractive index, extinction coefficient and real and

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Publication Date
Sat Dec 20 2014
Journal Name
International Journal Of Current Engineering And Technology
The Effect of Sb Dopant and Annealing Temperature on the Structural and Optical Properties of GeSe Thin Films
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The pure and Sb doped GeSe thin films have been prepared by thermal flash evaporation technique. Both the structural and optical measurement were carried out for as deposited and annealed films at different annealing temperatures.XRD spectra revealed that the all films have one significant broad amorphous peak except for pure GeSe thin film which annealed at 573 K, it has sharp peak belong to orthorhombic structure nearly at 2θ=33o . The results of the optical studies showed that the optical transition is direct and indirect allowed. The energy gap in general increased with increasing annealing temperature and decreased with increase the ratio of Sb dopant. The optical parameters such as refractive index, extinction coefficient and r

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Publication Date
Sat Oct 01 2011
Journal Name
Iraqi Journal Of Physics
A Study of the mechanical properties of aluminum composite materials prepared by atomization process
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Steel fiber aluminum matrix composites were prepared by atomization technique. Different air atomization conditions were considered; which were atomization pressure and distance between sample and nozzle. Tensile stress properties were studied. XRF and XRD techniques were used to study the primary compositions and the structure of the raw materials and the atomized products. The tensile results showed that the best reported tensile strength observed for an atomization pressure equal to 4 mbar and sample to nozzle distance equal to 12 cm. Young modulus results showed that the best result occurred with an air atomization pressure equal to 8 mbar and sample to nozzle distance equal to 16cm

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