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DC Sputtering Deposition of Copper Oxide Thin Films Doped with Carbon for Efficient Solar Selective Absorbers
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      In this work, carbon-doped copper oxide thin films were deposited by the reactive DC sputtering method for use as selective absorbents. The properties of the DC discharge plasma were studied, using the emission spectrum, in the presence of pure argon and by mixing it with oxygen once and carbon dioxide again to know the effect of adding these gases on the properties of the resulting plasma used in the deposition of films. The structural properties of the deposited thin films prepared with different flow ratio of carbon dioxide gas were studied using x-ray diffraction. To examine the selective absorber coatings, the reflectance within the UV-Vis spectrum was measured to calculate the percentage of energy absorbed by solar radiation using numerical integration. The reflectance was also measured in the range from 2.5 to 25 μm to calculate the thermal emission of the solar heater within a temperature of 373 K. Measurements showed good efficiency as a selective absorption layer. The best absorptance of the solar spectrum (α) was 0.8750, and the lowest emittance (ε) in the infrared region was 0.254 at 25% percentage of carbon dioxide in the reactive gas of the sputtering system. So, this ratio has the highest efficiency as a selective absorber.

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Publication Date
Fri Feb 01 2019
Journal Name
Physica B: Condensed Matter
Effect of gas mixing ratio on structural characteristics of titanium dioxide nanostructures synthesized by DC reactive magnetron sputtering
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Publication Date
Tue Jul 01 2014
Journal Name
Journal Of Nanotechnology & Advanced Materials
Structural and optical properties of SnS thin films
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Thin films of tin sulfide (SnS) were prepared by thermal evaporation technique on glass substrates, with thickness in the range of 100, 200 and 300nm and their physical properties were studied with appropriate techniques. The phase of the synthesized thin films was confirmed by X-ray diffraction analysis. Further, the crystallite size was calculated by Scherer formula and found to increase from 58 to 79 nm with increase of thickness. The obtained results were discussed in view of testing the suitability of SnS film as an absorber for the fabrication of low-cost and non toxic solar cell. For thickness, t=300nm, the films showed orthorhombic OR phase with a strong (111) preferred orientation. The films deposited with thickness < 200nm deviate

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Publication Date
Wed Jun 01 2022
Journal Name
Baghdad Science Journal
Preparation and study of the Structural, Morphological and Optical properties of pure Tin Oxide Nanoparticle doped with Cu
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            In this study, pure SnO2 Nanoparticles doped with Cu were synthesized by a chemical precipitation method. Using SnCl2.2H2O, CuCl2.2H2O as raw materials, the materials were annealed at 550°C for 3 hours in order to improve crystallization. The XRD results showed that the samples crystallized in the tetragonal rutile type SnO2 stage. As the average SnO2 crystal size is pure 9nm and varies with the change of Cu doping (0.5%, 1%, 1.5%, 2%, 2.5%, 3%),( 8.35, 8.36, 8.67, 9 ,7, 8.86)nm respectively an increase in crystal size to 2.5% decreases at this rate and that the crystal of SnO2 does not change with the introduction of Cu, and S

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Publication Date
Sun Apr 26 2020
Journal Name
Iraqi Journal Of Science
Synthesis and characterization of silver oxide nanoparticles prepared by chemical bath deposition for NH3 gas sensing applications
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Nano-silver oxide thin films with high sensitivity for NH3 gas were deposited on glass substrates by the chemical bath deposition technique. The preparations were made under different values of pH and deposition time at 70áµ’ C, using silver nitrate AgNO3 and triethanolamine. XRD analysis showed that all thin films were
polycrystalline with several peaks of silver oxides such as Ag2O, AgO and Ag3O4, with an average crystallite size that ranged between 31.7 nm and 45.8 nm, depending on the deposition parameters. Atomic force microscope (AFM) technique illustrated that the films were homogenous with different surface roughness and the
grain size ranged between 55.69 nm and 86.23 nm. The UV-Vis spectrophotometer showed that the op

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Publication Date
Wed Dec 30 2009
Journal Name
Iraqi Journal Of Physics
Electrical Properties of ZnS Thin Films
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The effect of annealing temperature (Ta) on the electrical properties like ,D.C electrical conductivity (σ DC), activation energy (Ea),A.C conductivity σa.c ,real and imaginary (ε1,ε2) of dielectric constants ,relaxation time (τ) has been measured of ZnS thin films (350 nm) in thickness which were prepared at room temperature (R.T) using thermal evaporation under vacuum . The results showed that σD.C increases while the activation energy values(Ea) decreases with increasing of annealing temperature.(Ta) from 303- 423 K .
The density of charge carriers (nH) and Hall mobility (μH) increases also with increasing of annealing temperature Hall effect measurements showed that ZnS films were n-type converted to p-type at high annealin

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Publication Date
Sun Mar 07 2010
Journal Name
Baghdad Science Journal
Optical properties of CdO thin films
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Cadmium Oxide thin films were deposited on glass substrate by spray pyrolysis technique at different temperatures (300,350,400, 500)oC. The optical properties of the films were studied in this work. The optical band-gap was determined from absorption spectra, it was found that the optical band-gap was within the range of (2.5-2.56)eV also width of localized states and another optical properties.

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Publication Date
Thu Jul 01 2021
Journal Name
Iraqi Journal Of Science
Characterization of Copper Phthalocyanine-Tetrasulfonic Acid Tetrasodium Salt /Graphene Oxide
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In this paper, the pure graphene oxide and copper phthalocyanine-tetrasolfonic acid tetrasodium salt were used to prepare thin films by using the spin coating method. These chemical compounds have remarkable optical properties and are chemically used in the development of device sensors by increasing the mixing ratio. Three different mixing ratios were prepared at room temperature and 150oC annealing temperature for three hours. The spectra of UV-VIS-IR absorption, photoluminescence, and Fourier-transformed infrared (FT-IR) were studied.

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Publication Date
Sun Jan 01 2023
Journal Name
Water, Air, And Soil Pollution
Sunflower Husks Coated with Copper Oxide Nanoparticles for Reactive Blue 49 and Reactive Red 195 Removals: Adsorption Mechanisms, Thermodynamic, Kinetic, and Isotherm Studies
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The adsorption process of reactive blue 49 (RB49) dye and reactive red 195 (RR195) dye from an aqueous solutions was explored using a novel adsorbent produced from the sunflower husks encapsulated with copper oxide nanoparticle (CSFH). Primarily, the features of a CSFH, such as surface morphology, functional groups, and structure, were characterized. It was determined that coating the sunflower husks with copper oxide nanoparticles greatly improved the surface and structural properties related to the adsorption capacity. The adsorption process was successful, with a removal efficiency of 97% for RB49 and 98% for RR195 under optimal operating conditions, contact time of 180 min, pH of 7, agitation speed of 150 rpm, initial dye concentration

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Publication Date
Tue Sep 01 2020
Journal Name
Iraqi Journal Of Physics
The magnetic switch manufacturing by using ferrofluid and ferrofluid doped copper nanoparticles
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In this work, a magnetic switch was prepared using two typesof ferrofluid materials, the pure ferrofluid and ferrofluid doped with copper nanoparticles (10 nm). The critical magnetic field (Hc) and the state of magnetic saturation (Hs) were studied using three types of laser sources. The main parameters of the magnetic switch measured using pure ferrofluid and He-Ne Laser source were Hc(0.5 mv, 0.4 G), Hs (8.5 mv, 3 G). For the ferrofluid doped with copper nanoparticles were Hc (1 mv, 4 G), Hs (15 mv, 9.6 G), Using green semiconductor laser for the Pure ferrofluid were Hc (0.5 mv, 0.3 G) Hs (15 mv, 2.9 G). While the ferrofluid doped with copper nanoparticles were Hc (0.5 mv, 1 G), Hs (12 mv, 2.8 G) and by using the violet semiconductor l

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Publication Date
Mon Jun 04 2018
Journal Name
Baghdad Science Journal
Effect the Thickness on the Electrical Properties and (I-V) Character of the (CdTe) Thin Films and Find the Efficiency of Solar Cell CdTe/CdS
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Thin films of CdTe were prepared with thickness (500, 1000) nm on the glass substrate by vacuum evaporation technique at room temperature then treated different annealing temperatures (373,473,and 573)K for one hour. Results of the Hall Effect and the electrical conductivity of (I-V) characteristics were measured in darkness and light.at different annealing temperature results show that the thin films have ability to manufacture solar cells, and found that the efficient equal to (2.18%) for structure solar cell (Algrid / CdS / CdTe /glass/ Al) and the efficient equal to (1.12%) for structure solar cell (Algrid / CdS / CdTe /Si/ Al) with thick ness of (1000) nm with CdTe thin films at RT.

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