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Abstract. In this work, Bi2O3 was deposited as a thin film of different thickness (400, 500, and 600 ±20 nm) by using
thermal oxidation at 573 K with ambient oxygen of evaporated bismuth (Bi) thin films in a vacuum on glass substrate and
on Si wafer to produce n-Bi2O3/p-Si heterojunction. The effect of thickness on the structural, electrical, surface and
optical properties of Bi2O3 thin films was studied. XRD analysis reveals that all the as deposited Bi2O3 films show
polycrystalline tetragonal structure, with preferential orientation in the (201) direction, without any change in structure
due to increase of film thickness. AFM and SEM images are used to investigate the influences of film thickness on
surface properties. The optical measur
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