Cadmium Selenide (CdSe) thin films have been deposited on a glass substrate utilizing the plasma DC-sputtering method at room temperature at different deposition time in order to achieve different films thickness, and studied its sensitivity to the  carbon monoxide CO gas which are show high response as the film thickness increases, the DC-conductivity and photoconductivity are also studied and which are increased too as the film thickness increases, that indicates the good semiconducting behavior at room  temperature and light environments.

Nanostructural cupric oxide (CuO) films were prepared on Si and glass substrate by pulsed laser deposition technique (PLD) using laser Nd:YAG, using different laser pulses energies from 200 to 600 mJ. The X-ray diffraction pattern (XRD) of the films showed a polycrystalline structure with a monoclinic symmetry and preferred orientation toward (111) plane with nano structure. The crystallite size was increasing with increasing of laser pulse energy. Optical properties was characterized by using UV–vis spectrometer in the wave lengthrange (200-1100) nm at room temperature. The results showed that the transmission spectrum decreases with the laser pulses energy increase. Sensitivity of NO2 gas at different operating temperatures, (50°C,

Polycrystalline Indium oxide (In2O3) and Indium oxide-zinc oxide (IZO) thin films mixed with 10% ZnO content were prepared by spray-pyrolysis technique at relatively low substrate temperature (150 ˚C).Field emission scanning electron microscope (FE-SEM) shows that the nanostructure at 10% ZnO content has pyramid like structure. The hall effect measurements show that the prepared samples have n-type charge carriers .The films were examined as gas sensor against H2S gas at different operating temperatures (200, 250 and 300) oC, and it was found that the IZO sample a good sensitivity to H2S gas ~ 572 % at operating temperature 200 oC, with relatively fast response time of 19 s and recovery time of 17

    The current study was designed to investigate the occurrence of aflatoxin B1 in thirty two samples of fish feedstuff were collected randomly from some Iraqi local markets using ELISA technique. Aflatoxin B1 was detected in thirty samples and the concentration of toxin ranged from 50 ppb to 1000 ppb.  

   Microwave and ozone were used for detoxification of aflatoxin B1 from sample with highest concentration (1000 ppb), two degree of temperature and two times (50°C and 100°C for 5 minute and 10 minute to each degree) of microwave, also two doses and two times (2 g and 4 g for 5 minute and 10 minute to each dose) of ozone gas were used.

   Degradation of aflatoxin B1 by

   A new nano-sized NiMo/TiO₂-γ-Al₂O₃ was prepared as a Hydrodesulphurization catalyst for Iraqi gas oil with sulfur content of 8980 ppm, supplied from Al-Dura Refinery. Sol-gel method was used to prepare TiO₂- γ-Al₂O₃ nano catalyst support with 64% TiO_2, 32% Al₂O₃, Ni-Mo/TiO-γ-Al₂O₃ catalyst was prepared under vacuum impregnation conditions to loading metals with percentage 3.8 wt.% and 14 wt.% for nickel and molybdenum respectively while the percentage for alumina, and titanium became 21.7, and 58.61 respectively. The synthesized TiO₂- γ-Al₂O₃ nanocomposites and Ni-Mo /TiO₂

In this study, tin oxide (SnO2) and mixed with cadmium oxide (CdO) with concentration ratio of (5, 10, 15, 20)% films were deposited by spray pyrolysis technique onto glass substrates at 300ºC temperature. The structure of the SnO2:CdO mixed films have polycrystalline structure with (110) and (101) preferential orientations. Atomic force microscopy (AFM) show the films are displayed granular structure. It was found that the grain size increases with increasing of mixed concentration ratio. The transmittance in visible and NIR region was estimated for SnO2:CdO mixed films. Direct optical band gap was estimated for SnO2 and SnO2 mixed CdO and show a decrease in the energy gap with increasing mixing ratio. From Hall measurement, it was fou

The physical and morphological characteristics of porous silicon (PS) synthesized via gas sensor was assessed by electrochemical etching for a Si wafer in diluted HF acid in water (1:4) at different etching times and different currents. The morphology for PS wafers by AFM show that the average pore diameter varies from 48.63 to 72.54 nm with increasing etching time from 5 to 15min and from 72.54 to 51.37nm with increasing current from 10 to 30 mA. From the study, it was found that the gas sensitivity of In2O3: CdO semiconductor, against NO2 gas, directly correlated to the nanoparticles size, and its sensitivity increases with increasing operating temperature.

Environmental pollutions and resources depletion motivates scientific research to innovate technologies for sustainable productive systems. To develop gas sensing substance with optimized performance a perovskite compound of HoxFe1-x FeO3 (where x= 0, 0.01, 0.03 and 0.05) were prepared by standard solid state reaction technique. The crystal structure was studied by XRD, which confirmed the formation of polycrystalline orthorhombic structure with space group Pbnm type perovskite. The preferred crystal growth of the main peak was (211). The structural parameters were also calculated and it was found that the lattice constants and particle size increased with the Ho doping ratio. The electrical properties were studied using the Hall effect,

The sensors based on Nickel oxide doped chromic oxide (NiO: Cr2O3) nanoparticals were fabricated using thick-film screen printing of sol-gel grown powders. The structural, morphological investigations were carried out using XRD, AFM, and FESEM. Furthermore, the gas responsivity were evaluated towards the NH3 and NO2 gas. The NiO0.10: Cr2O3 nanoparticles exhibited excellent response of 95 % at 100oC and better selectivity towards NH3 with low response and recovery time as compared to pure Cr2O3 and can stand as reliable sensor element for NH3 sensor related applications.

The nuclear charge density distributions, form factors and
corresponding proton, charge, neutron, and matter root mean square
radii for stable 4He, 12C, and 16O nuclei have been calculated using
single-particle radial wave functions of Woods-Saxon potential and
harmonic-oscillator potential for comparison. The calculations for the
ground charge density distributions using the Woods-Saxon potential
show good agreement with experimental data for 4He nucleus while
the results for 12C and 16O nuclei are better in harmonic-oscillator
potential. The calculated elastic charge form factors in Woods-Saxon
potential are better than the results of harmonic-oscillator potential.
Finally, the calculated root mean square