In this work, has been a studied the effect of thermal treatment using different annealing temperatures (373, 423 and 473) K in vacuum on structural and morphological properties of organic semiconductor Alq3:C60 thin films which are prepared by the spin coating on a glass, silicon and porous silicon. These films have been coated on substrates with speed of 2000 rpm. The structure properties of Tris(8-hydroxyquinoline) aluminum (III) (Alq3) and fullerene (C60) (100:1) and (100:10) blend as-deposited and treated have been studied by X-ray diffraction (XRD) for glass only and morphological properties by Atomic Force Microscope (AFM) for silicon and porous silicon substrates. The results of XRD pattern shows that the structure of (Alq3:C60) as-deposited and annealed thin films are polycrystalline in nature for both mixed weight ratio. The result of AFM measurements show that grain size increase is due to the increases of surface energy at high temperature. Surface roughness increasing and decreased randomly with the temperature can be attributed to the random distributions of the grains and also due to the phase change.
In this study, evaluate the impact of organic extracts of leaf butterfly Albzl in some aspects of life has been affected performance ratio destruction of eggs increased by 0.8% extract Alorat ethanol solvent, ethyl acetate and hexane, respectively ..
In this work, the fine structure macro-porous silicon (macroPS) substrate was prepared by photo-electro-chemical etching of n-type silicon wafer. Ultraviolet illumination condition of wavelength 360nm wavelength and intensity of about 100mW/cm2 with etching current density of about 50 mA/cm2 and etching time 5
min was employed. The Hybrid device gold nanoparticles /macroPorous Silicon (AuNPs/macroPS) was fabricated by deposition AuNPs into mPS substrate Via immersion plating process of macroPS in the solution of HAuCl4 with the (10-3M) concentration and 2min immersion time. The characteristics of PS before and after
immersion process were investigated by scanning electron microscopy (SEM), EDS,&nb
Optical detector was manufactured Bashaddam thermal evaporation technique at room temperature under pressure rays studied characteristics of reactive Scout efficiency quantitative ratio of the signal and the ability equivalent to noise
Samples of Oxytricha falax were collected from Tigris River by 55µ. mesh net. Culturing of O. falax were cultivated in specific conditions (DO 3-5mg/l.; W.Temp. 24±1ºC; pH: 6.8-7.5).The effect of various furfural concentration 0, 20, 40, 80,100 and 124 ppm and toluene concentration 0, 15, 30, 34.2, 34.5 and 35 ppm after two periods of treatment (24 and 48 hr.) on the physiological parameters of O. falax ciliate were observed. This study showed that the lethal concentration of furfural was 124ppm and 80ppm after 24hr. and 48hr. from treatment which killed all the individual community respectively. Furthermore the treatment of O. falax individuals with different concentrations of toluene indicated that 34.5 ppm of it caused disappearance o
... Show MoreNanostructural cupric oxide (CuO) films were prepared on Si and glass substrate by pulsed laser deposition technique (PLD) using laser Nd:YAG, using different laser pulses energies from 200 to 600 mJ. The X-ray diffraction pattern (XRD) of the films showed a polycrystalline structure with a monoclinic symmetry and preferred orientation toward (111) plane with nano structure. The crystallite size was increasing with increasing of laser pulse energy. Optical properties was characterized by using UV–vis spectrometer in the wave lengthrange (200-1100) nm at room temperature. The results showed that the transmission spectrum decreases with the laser pulses energy increase. Sensitivity of NO2 gas at different operating temperatures, (50°C,
... Show MoreStudied the optical properties of the membranes CdS thin containing different ratios of ions cadmium to sulfur attended models manner spraying chemical gases on the rules of the glass temperature preparation (350c) were calculated energy gap allowed direct these membranes as observed decrease in the value of the energy gap at reducing the proportion ofsulfur ions as absorption coefficient was calculated
The alloys of CdSe1-xTex compound have been prepared from their elements successfully with high purity (99.9999%) which mixed stoichiometry ratio (x=0.0, 0.25, 0.5, 0.75 and 1.0) of (Cd, Se and Te) elements. Films of CdSe1-xTex alloys for different values of composition with thickness(0.5?m) have been prepared by thermal evaporation method at cleaned glass substrates which heated at (473K) under very low pressure (4×10-5mbar) at rate of deposition (3A?/s), after that thin films have been heat treated under low pressure (10-2mbar) at (523K) for two hours. The optical studies revealed that the absorption coefficient (?) is fairly high. It is found that the electronic transitions in the fundamental absorption edge tend to be allowed direct tr
... Show MoreCadmium Selenide (CdSe) thin films have been deposited on a glass substrate utilizing the plasma DC-sputtering method at room temperature at different deposition time in order to achieve different films thickness, and studied its sensitivity to the carbon monoxide CO gas which are show high response as the film thickness increases, the DC-conductivity and photoconductivity are also studied and which are increased too as the film thickness increases, that indicates the good semiconducting behavior at room temperature and light environments.
The electrical properties of CdO/porous Si/c-Si heterojunction prepared by deposition of CdO layer on porous silicon synthesized by electrochemical etching were studied. The structural, optical, and electrical properties of CdO (50:50) thin film prepared by rapid thermal oxidation were examined. X-ray diffraction (XRD) results confirmed formation of nanostructured silicon layer the full width half maximum (FWHM) was increased after etching. The dark J-V characteristics of the heterojunction showed strong dependence on etching current density and etching time. The ideality factor and saturation current of the heterojunction were calculated from J-V under forward bias. C-V measurements confirmed that the prepared heterojunctions are abrupt
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