This work presents an analytical study for simulating a Fabry-Perot Bi-stable etalon (F-P cavity) filled with a dispersive optimized nonlinear optical material (Kerr type) such as semiconductors Indium Antimonite (InSb). Depending on the obtained results and because of a trade-off between the optical path length of the sample and active cavity lifetime, an optimization procedure was applied on the InSb etalon/CO laser parameters; critical switching irradiance (Ic) was applied via simulation systems of optimization procedures of optical cavity (Matlap program was used to study the optical Bi-stability of a nonlinear Fabry-Perot cavity). In order to achieve minimum switching power and faster switching time, the optimization surface recombination on the diffusion length and effective cavity lifetime was studied.
In addition, for a specific absorption value 400 cm-1, the lifetime coefficient values were 0.33 , 0.091 , 0.0172 ns for sample thickness (D) = 500 , 60 , 20 mm, respectively. Also, for a bulk recombination time (Tl) of 200 ns, specific absorption (α) of 50 cm1, and D of 20 mm, the surface recombination speed value was 2.845 x 105 cm/sec, whereas the active lifetime, which is defined as the thickness over the surface recombination speed (sυ) (D/2sυ), was equal to 3.5ns.
