Thin films of the blended solution of NiPc/C₆₀ are fabricated using spin-coating method for three different ratios (100/1, 100/10 and 100/100) according to the weight. The films are deposited on to glass substrates and treated with several annealing temperatures (373, 423 and 473)K. The structure and surface morphology of the as-deposited and annealed films using x-ray diffraction and AFM was studied and exhibited a change and enhanced crystallization and surface morphology caused by changes in heat treatment temperatures. Investigation of X-ray diffraction patterns of NiPc/C₆₀ indicated that it have polymorphism structure, i.e. mix between amorphous and polycrystalline structure. when heat treatment temperatures ch

The optical detectors which had been used in medical applications, and especially in radioactive treatments, need to be modified studied for the effects of radiations on them. This study included preparation of the MnS thin films in a way that vacuum thermal evaporation process at room temperature 27°C with thickness (400+-10nm) nm and a sedimentation rate of 0.39nm/sec on glass floors. The thin films prepared as a detector and had to be treated with neutron irradiation to examine the results gained from this process. The results decay X-ray (XRD) showed that all the prepared thin films have a multi-crystalline structure with the dominance of the direction (111), the two samples were irradiated with a neutron irradiation source (241Am-9Be)

Chlorine doped SnS have been prepared utilizing chemical spray pyrolysis. The effects of chlorine concentration on the optical constants were studied. It was seen that the transmittance decreased with doping, while reflectance, refractive index, extinction coefficient, real and imaginary parts of dielectric constant were increased as the doping percentage increased. The results show also that the skin depth decrease as the chlorine percentage increased which could be assure that it is transmittance related.

The optical transmission and UV-VIS absorption spectra have been recorded in the wavelength range (200-1100m) for different composition of polyaniline and polyvinyl Alcohol(PVA ) blends thin films. Polyaniline was prepared in acidic medium to enhancement the solubility and processibility, The optical energy gap (Eopt) refractive index and optical dielectric constant real and imaginary part have been evaluated. The effects of doping percentage of prepared polyaniline on these parameters was discussed and the non –linear behavior for all these parameters was investigated.

    Extraction and preparation of red organic dye from beetroot plant in different concentrations by using the solvent extraction process. Ethanol was the solvent used to prepare five different concentrations at the ratio of (Dye: Ethanol) abbreviated (D: E) 5:0,4:1, 3:2, 2:3,1:4. The optical, structural, and morphological properties are studied for the samples. The results appeared using the UV-Vis spectroscope the maximum peak of absorption (A) spectrum at wavelength A_λmax=480 nm when the transmittance (T) at the same wavelength 25% and the reflectivity 0.8%. Florescent (F) spectrum of beetroot dye is measured at wavelength F_λmax=535nm achieved to redshift about Δλ=55 nm. Also, measured the energy band gap

In this report Silver doped Tin Sulfide (SnS) thin films with ratio of (0.03) were prepared using thermal evaporation with a vacuum of 4*10-6 mbar on glass with (400) nm thickness and the sample annealing with ( 573K ). The optical constants for the wavelengths in the range (300-900) nm and Hall effect for (SnS and SnS:3% Ag) films are investigated and calculated before and after annealing at 573 K. Transition metal doped SnS thin films the regular absorption 70% in the visible region, the doping level intensification the optical band gap values from 1.5- 2 eV. Silver doped tin sulfide (SnS) its direct optical band gap. Hall Effect results of (SnS and SnS:3% Ag) films show all films were (p-type) electrical conductivity with resistivity of

In this work the effect of annealing temperature on the structure and the electrical properties of Bi thin films was studied, the Bi films were deposited on glass substrates at room temperature by thermal evaporation technique with thickness (0.4 µm) and rate of deposition equal to 6.66Å/sec, all samples are annealed in a vacuum for one hour. The X-ray diffraction analysis shows that the prepared samples are polycrystalline and it exhibits hexagonal structure. The electrical properties of these films were studied with different annealing temperatures, the d.c conductivity for films decreases from 16.42 ? 10-2 at 343K to 10.11?10-2 (?.cm)-1 at 363K. The electrical activation energies Ea1 and Ea2 increase from 0.031 to 0.049eV and

     X-ray phase analysis was used to analyse the composition of Pb₈Na_(2±x)(PO₄)₆ (lead-sodium apatite structure) with different X values (X values refer to changes in the excess or lack of sodium (2±X) in the apatite structure): -0.15, -0.10, -0.05, 0.00, +0.05, +0.10, and +0.15. The ceramic method (solid-state reaction) was used to synthesize all samples at a temperature of 800 °C. Many programs, such as match software (v.3), PDF-4 database (ICCD), and database PDF-4 (ASTM), were used to study the single phases. The least-squares method was used to calculate the unit cell parameters. Results have shown that the following compositions: Pb₈Na₂(PO₄)_6<

Bruggeman's symmetric effective-medium model of vanadium oxide is introduced, in which the transmittance was studied because of its importance in the subject of smart windows, it was studied from ( 5 nm-1000 nm) for each of the regions of the electromagnetic spectrum, the ultraviolet and visible region, and the near and medium sub-regions of the infrared and the results showed that the importance of studying the transmittance of vanadium oxide as a good candidate For this kind of industries. Our results showed that the small sizes of the material guarantee an almost constant and high transmittance to the visible region; this is due to the agreement of the direction of the dipoles in the material with the direction of the internal el

In this work, porous Silicon structures are formed with photochemical etching process of n-type Silicon(111) wafers of resistivity (0.02.cm) in hydrofluoric acid (HF) of concentration (39%wt) under light source of tungeston halogen lamp of (100 Watt) power. Samples were anodized in a solution of 39%HF and ethanol at 1:1 for 15 minutes. The samples were realized on n-type Si substrates Porous Silicon layers of 100m thickness and 30% of porousity. Frequency dependence of conductivity for Al/PSi/Si/Al sandwich form was studied. A frequency range of 102-106Hz was used allowing an accurate determination of the impedance components. Their electronic transport parameters were determined using complex impedance measurements. These measu