Various Hall Effects have been successfully observed in samples of n-type indium antimonide with values for conductivity, energy gap, Hall mobility and Hall coefficient all agreeing with theory. A particular interest in developing a method for obtaining accurate values of carrier concentrations in semiconductor samples has been fulfilled with an experimental result of (1.6×1016 cm-3 ±10.7%) giving a percentage difference of (6.7%) to a quoted value of (1.5×1016cm-3) at (77K) using an (80mW C.W. CO2) laser beam at (10.6μm) to illuminate a similar sample of n-type indium antimonide, an "Optical" Hall effect has been observed. Although some doubt has been raised as to the validity of effect i.e. "thermal" rather than "Optical", values of (45.8×10-8 seconds) for recombination times of electron, and (3.2×1016cm-3) for the dynamic carrier concentration were calculated by this method. A similar attempt at illuminating the sample with an R.S. catalogue ultra bright L.E.D proved inconsistent with theory and consequent result have been left inconclusive.
An Investigation of Photoconductivity in Indium Antimonide Crystal
Photoconductivity
Publication Date
Tue Jan 18 2022
Journal Name
Materials Science Forum
The Effect of Gamma Radiation on the Manufactured HgBa<sub>2</sub>Ca<sub>2</sub>Cu<sub>2.4</sub>Ag<sub>0.6</sub>O<sub>8+δ</sub> Compound
Gamma doses radiation
crystal size
strain
degree of crystallinity
Scherrer
crystallinity and Williamson equations.
In this article four samples of HgBa2Ca2Cu2.4Ag0.6O8+δ were prepared and irradiated with different doses of gamma radiation 6, 8 and 10 Mrad. The effects of gamma irradiation on structure of HgBa2Ca2Cu2.4Ag0.6O8+δ samples were characterized using X-ray diffraction. It was concluded that there effect on structure by gamma irradiation. Scherrer, crystallization, and Williamson equations were applied based on the X-ray diffraction diagram and for all gamma doses, to calculate crystal size, strain, and degree of crystallinity. I
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