This research deals with the effect of gallium oxide and cerium oxide as dopants on the structural and optical characteristics of tin oxide. Gallium and cerium oxide doped tin oxide was prepared with different doping concentrations (0, 0.03, 0.05 and 0.07) wt. pure and doped tin oxide thin films were prepared by the pulsed laser deposition technique. X-ray diffraction and UV-Visible spectrophotometer were employed to investigate both oxides doping effects. Results showed that all prepared samples have poly-crystalline structure with a preferred plane of crystal growth along (110), where the crystal size grew from 40.3 nm to 64.5 nm and to 43.5 nm for Ga₂O₃ and CeO₂ doped tin oxide thin films, res

In present work examined the oxidation desulfurization in batch system for model fuels with 2250 ppm sulfur content using air as the oxidant and ZnO/AC composite prepared by thermal co-precipitation method. Different factors were studied such as composite loading 1, 1.5 and 2.5 g, temperature 25 ^oC, 30 ^oC and 40 ^oC and reaction time 30, 45 and 60 minutes. The optimum condition is obtained by using Tauguchi experiential design for oxidation desulfurization of model fuel. the highest percent sulfur removal is about 33 at optimum conditions. The kinetic and effect of internal mass transfer were studied for oxidation desulfurization of model fuel, also an empirical kinetic model was calculated for model fuels

The effect of 0.662MeV gamma radiation on the optical properties of the CdTe thin films was studied. 300nm thickness of CdTe samples were irradiated with doses (10, 20, 30,60krad) in room temperature. The absorption spectra for all the samples were recorded using UV- Visible spectrometer in order to calculate the energy gap, width of localized states and optical constants(refractive index, extinction coefficient, real and imaginary parts of dielectric constant). The optical energy gap was found to decrease from (1.53 to 1.48 eV), while the width of localized states increased from (1.34 to 1.49 eV) with the increasing of radiation dose. The behavior of energy gap with the irradiation dose makes the material a good candidate for dosimetry

   In this work, thin films of undoped and Al-doped CdO with (0.5, 1 and 2) wt.%  were prepared by using thermal vacuum evaporation on glass substrate at room  temperature. The optical absorption coefficient (α) of the films was determined from transmittance spectra in the range of wavelength (400-1100) nm. The spectral transmission and the optical energy band gap decrease from 75% and 2.24 eV to 20%  and 2.1 eV respectively depending upon the Al content in the films, also our studies include the calculation of  the optical constants (refractive index, extinction coefficient, real and imaginary part of dielectric constant) as a function of photon energy.  It is evaluated that the optical band gap of

     A colloidal indium oxide (In₂O₃) nanoparticles (NPs) were synthesized pulsed laser ablation (PLA) of  indium  plate placed on the bottom of the quartz vessel containing (3ml) of pure ethanol. The influence laser energy on the properties of the formed nano-particles  were characterized by using atomic force microscopy (AFM), X-ray diffraction (XRD), Ultraviolet Visible (UV-Vis) technique, and electrical properties measurements. The XRD revealed the crystallization  structure of  In₂O₃  nanoparticles and all the films having preferential orientation along (222) plane and intensity increases with increasing laser energy, The UV–Visible spect

This paper presents the effect of Cr doping on the optical and structural properties of TiO2 films synthesized by sol-gel and deposited by the dip- coating technique. The characteristics of pure and Cr-doped TiO2 were studied by absorption and X-ray diffraction measurement. The spectrum of UV absorption of TiO2 chromium concentrations indicates a red shift; therefore, the energy gap decreases with increased doping. The minimum value of energy gap (2.5 eV) is found at concentration of 4 %. XRD measurements show that the anatase phase is shown for all thin films. Surface morphology measurement by atomic force microscope (AFM) showed that the roughness of thin films decrease with doping and has a minimum value with 4 wt % doping ratio.

    Objective: The present study investigated the effects of different dose levels of Zinc oxide Nanoparticles (ZnO NPs) on the liver and kidney tissues in albino male mice. Methadology: ZnO NPs was administrated as a daily oral dose of (150, 350 mg/kg body weight) gavage for 2 weeks. Eighteen male mices were used by dividing them into three groups. Result: Histopathological examination of kidney and hepatic tissues treated with ZnO NPs showed toxicity changes compared with control group. Conclusion:This study demonstrated the ability of ZnO NPs to affect on kidney and liver tissues. Recommendation: More study needed to know the effect of different doses of nanoparticles on human health.  

This study focuses on synthesizing Niobium pentoxide (Nb₂O₅) thin films on silicon wafers and quartz substrates using DC reactive magnetron sputtering for NO₂ gas sensors. The films undergo annealing in ambient air at 800 °C for 1 hr. Various characterization techniques, including X-ray diffraction (XRD), atomic force microscopy (AFM), energy-dispersive X-ray spectroscopy (EDS), Hall effect measurements, and sensitivity measurements, are employed to evaluate the structural, morphological, electrical, and sensing properties of the Nb₂O₅ thin films. XRD analysis confirms the polycrystalline nature and hexagonal crystal structure of Nb₂O₅. The optical band gap val

          In this work, the optical emission characteristics of the ZnO plasma were presented. The plasma parameters: electron temperature (T_e), electron density( n_e), plasma frequency (f_p) and Debye length (λ_D) were  studied with  a spectrometer that collects the spectrum ZnO plasma in air produced by Nd:YAG laser,(λ=1064 nm) at ratio X=0.5 in the range of energy of (700-1000 mJ), duration (10 ns). The Boltzmann plot methodwas employed to calculate the electron temperature (T_e), while the Stark broadening  was used to determine the electron density (n_e), Debye duration (λ_D), and plasma frequency (f_p).  T_e, ne, and f_p

In this research thin films from SnO2 semiconductor have been prepared by using chemical pyrolysis spray method from solution SnCl2.2H2O at 0.125M concentration on glass at substrate temperature (723K ).Annealing was preformed for prepared thin film at (823K) temperature. The structural and sensing properties of SnO2 thin films for CO2 gas was studied before and after annealing ,as well as we studied the effect temperature annealing on grain size for prepared thin films .