Thin films of (CdO)x (CuO)1-x (where x = 0.0, 0.2, 0.3, 0.4 and 0.5) were prepared by the pulsed laser deposition. The CuO addition caused an increase in diffraction peaks intensity at (111) and a decrease in diffraction peaks intensity at (200). As CuO content increases, the band gap increases to a maximum of 3.51 eV, maximum resistivity of 8.251x 104 Ω.cm with mobility of 199.5 cm2 / V.s, when x= 0.5. The results show that the conductivity is ntype when x value was changed in the range (0 to 0.4) but further addition of CuO converted the samples to p-type.

Drug nanocrystals are nanoscopic crystals of the parent compound with dimensions less than 1 µm. A decrease in particle size will lead to an increase in effective surface area in the diffusion layer, which, in turn, increases the drug dissolution rate. Drug nanocrystals are one of the most important strategies to enhance the oral bioavailability of hydrophobic drugs.

Cefixime is the first member of what is generally termed the third generation orally active cephalosporins. These third generation cephalosporins are distinct from the older β-lactam antibiotics in their intensive antibacterial activity against a wide range of gram-negative bacteria.

The aim of this study is to prepare nanocrystals of cefixime as a caps

Ceramic body as a refractory was prepared by using shamoot, which is prepared by firing  kaolin Duekhla at 1450 ºC at 2hr ,Flint clay ,Asbestos fiber(Anthophylite type)and Sodium silicts,Phosphoric acid solution as a binder . After miling, siving ,and mixing ,samples were formed, followed that drying, firing at different temperature.     Phyical ,thermal and mechanical  properties were measured .The conclusion behind the results that the refractory prepared from; 37.5% shamoote,25% Asbestos ,37.5% Flint clay and Phosforic acid solution fired at 1300 ºC  gave a refractory material having  melting temperature ;1490 ºC, thermal shock resistance 7 cycle, thermal conductivity 2.1w/m2.K, apperan

The preparation of tin metal from stannous chloride solution by wet method in the presence of aluminum powder as a reducing agent is studied. The preparation is commenced through a reduction step in the presence of reducing agent followed by smelting step at elevated temperature in a programmable electrical furnace. In the reduction step, preliminary experiments are conducted to study the effect of initial acidity, time of addition of  the aluminum powder and excess amount of reducing agent on the conversion of stannous to tin metal. Three different parameters are studied through smelting step, these are : heating rate, temperature and residence time.

To characterize the product, different instrumental analyses are used:

Reacts compound C6H5PO2Cl2 with Secretary secondary R2NH at room temperature by Mulet 2:1 and using chloroform as a solvent in dry conditions to form composite 2HCl and the interaction of compound solution of sodium hydroxide and potassium by Mulet 3:1 salt was prepared

Chalcopyrite thin films were one-step potentiostatically deposited onto stainless steel plates from aqueous solution containing CuSO4, In2(SO4)3 and Na2S2O3.The ratio of (In3+:Cu2+) which involved in the solution and The effect of cathodic potentials on the structural had been studied. X-ray diffraction (XRD) patterns for deposited films showed that the suitable ratio of (In3+:Cu2+) =6:1, and suitable voltage is -0.90 V versus (Ag/AgCl) reference electrode

Cadmium Oxide thin films were deposited on glass substrate by spray pyrolysis technique at different temperatures (300,350,400, 500)oC. The optical properties of the films were studied in this work. The optical band-gap was determined from absorption spectra, it was found that the optical band-gap was within the range of (2.5-2.56)eV also width of localized states and another optical properties.

The effect of annealing temperature (Ta) on the electrical properties like ,D.C electrical conductivity (σ DC), activation energy (Ea),A.C conductivity σa.c ,real and imaginary (ε1,ε2) of dielectric constants ,relaxation time (τ) has been measured of ZnS thin films (350 nm) in thickness which were prepared at room temperature (R.T) using thermal evaporation under vacuum . The results showed that σD.C increases while the activation energy values(Ea) decreases with increasing of annealing temperature.(Ta) from 303- 423 K .
The density of charge carriers (nH) and Hall mobility (μH) increases also with increasing of annealing temperature Hall effect measurements showed that ZnS films were n-type converted to p-type at high annealin

GaN thin films were deposited by thermal evaporation onto
glass substrates at substrate temperature of 403 K and a thickness of
385 nm . GaN films have amorphous structure as shown in X-ray
diffraction pattern . From absorbance data within the range ( 200-
900 ) nm direct optical energy gap was calculated . Also the others
optical parameters like transmittance T, reflectance R , refractive
index n , extinction coefficient k , real dielectric constant 1 Î , and
imaginary dielectric constant 2 Î were determined . GaN films
have good absorbance and minimum transmittance in the region of
the visible light .