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Effect of annealing temperature on structural and optical properties of Cr2O3 thin films by PLD
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In the present work, pulsed laser deposition (PLD) technique was applied to a pellet of Chromium Oxide (99.999% pure) with 2.5 cm diameter and 3 mm thickness at a pressure of 5 Tons using a Hydraulic piston. The films were deposited using Nd: YAG laser λ= (4664) nm at 600 mJ and 400 number of shot on a glass substrate, The thickness of the film was (107 nm). Structural and morphological analysis showed that the films started to crystallize at annealing temperature greater than 400 oC. Absorbance and transmittance spectra were recorded in the wavelength range (300-
4400) nm before and after annealing. The effects of annealing temperature on absorption coefficient, refractive index, extinction coefficient, real and imaginary parts of dielectric constant were also study. It was found that all these parameters decrease as the annealing temperature increased to 500 °C, while the energy gap after annealing increase from 3.4 eV to 3.85 eV.

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Publication Date
Mon Jul 01 2019
Journal Name
Journal Of Physics: Conference Series
Effect of aluminum content on the structural, morphology, and electrical properties of Al<sub>1-x</sub>Sb<sub>x</sub>thin films
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Abstract<p>Bulk AlxSb1-x samples were prepared with different x ratios (0.1, 0.3, 0.5, 0.7 and 0.9) by quenching technique. This was done throughout mixing the aluminum and antimony elements according to the proper atomic weight and put them in an evacuated quartz ampoule which then sealed and heated at 1273 K for five hours and left to cool in air. Thin films of AlxSb1-xwere prepared by using thermal evaporation under vacuum of 10-5 mbar on glass substrates at room temperature with deposition rate (10-15nm/min) at thickness of ∼ 500nm. The structures of AlxSb1-x bulk and thin films have been studied by X–ray diffraction technique. The results showed that all alloys have polycrystalline structures and the p</p> ... Show More
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Publication Date
Tue Jan 08 2019
Journal Name
Iraqi Journal Of Physics
The structure and optical properties of organic semiconductor bulk hetrojunction blend (NiPcTs/Alq3) thin films
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The effect of heat treatment on the optical properties of the bulk heterojunction blend nickel (II) phthalocyanine tetrasulfonic acid tetrasodium salt and Tris (8-hydroxyquinolinato) Aluminum (NiPcTs/Alq3) thin films which prepared by spin coating was described in this study. The films coated on a glass substrate with speed of 1500 rpm for 1.5 min and treated with different annealing temperature (373, 423 and 473) K. The samples characterized using UV-Vis, X ray diffraction and Fourier transform Infrared (FTIR) spectra, XRD patterns indicated the presence of amorphous and polycrystalline blend (NiPcTs/Alq3). The results of UV visible shows that the band gap increase with increasing the annealing temperature up to 373 K and decreases with

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Publication Date
Thu Nov 19 2020
Journal Name
Iop Conference Series: Materials Science And Engineering
Structural, morphological and optical properties of spray pyrolysis TiO<sub>2</sub>:GO nano films
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Thin films of pure and doped nano titanium dioxide (TiO2) were prepared using a chemical pyrolysis technique (CPS), with different nanosize graphene oxide (GO) concentrations in the range (3-9)wt%. The structural, morphological andoptical characteristics of these films were investigated. X-ray diffraction (XRD) technique measurements revealed that the structure properties of TiO2have polycrystalline structure with anatase phase. AFM analysis showed the grain size of TiO2 films with different concentrations was decreased after doping with high concentration of GO ratio. Roughness of these films decreased too after adding of GO impurity for all films from (7.65-5.6)nm except 5wt% percentage where increased to 13.7nm. Optical

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Publication Date
Tue Dec 11 2018
Journal Name
Iraqi Journal Of Physics
Spectroscopic and structural studies of cadmium oxide thin films prepared by D.C magnetron sputtering
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Cadmium oxide thin films were prepared by D.C magnetron plasma sputtering using different voltages (700, 800, 900, 1000, 1100 and 1200) Volt. The Cadmium oxide structural properties using XRD analysis for just a voltage of 1200 volt at room temperature after annealing in different temperatures (523 and 623) K were studied .The results show that the films prepared at room temperature have some peaks belong to cadmium element along the directions (002), (100), (102) and (103) while the other peaks along the directions of (111), (200) and (222) belong to cadmium oxide. Annealed samples display only cadmium oxide peaks. Also, the spectroscopic properties of plasma diagnostic for CdO thin films were determined and the results show that the el

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Publication Date
Thu May 04 2023
Journal Name
Ibn Al-haitham Journal For Pure And Applied Sciences
Influence Annealing on the Physical Properties of Silver Selenide Thin Film at Different Temperatures by Thermal Evaporation
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This survey investigates the thermal evaporation of Ag2Se on glass substrates at various thermal annealing temperatures (300, 348, 398, and 448) °K. To ascertain the effect of annealing temperature on the structural, surface morphology, and optical properties of Ag2Se films, investigations and research were carried out. The crystal structure of the film was described by Xray diffraction and other methods.The physical structure and characteristics of the Ag2Se thin films were examined using X-ray and atomic force microscopy (AFM) based techniques. The Ag2Se films surface morphology was examined by AFM techniques; the investigation gave average diameter, surface roughness, and grain size mutation values with increasing annealing temperature

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Publication Date
Wed Dec 18 2019
Journal Name
Baghdad Science Journal
Structural and Optical Properties for Nanostructure (Ag2O/Si & Psi) Films for Photodetector Applications
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Ag2O (Silver Oxide) is an important p-type (in chasm to most oxides which were n-type), with a high conductivity semiconductor. From the optical absorbance data, the energy gap value of the Ag2O thin films was 1.93 eV, where this value substantially depends on the production method, vacuum evaporation of silver, and optical properties of Ag2O thin films are also affected by the precipitation conditions. The n-type and p-type silicon substrates were used  with porous silicon wafers to precipitate  ±125 nm, as thick Ag2O thin film by thermal evaporation techniques in vacuum and via rapid thermal oxidation of 400oC and oxidation time 95 s, then characterized by measurement of

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Publication Date
Wed May 12 2010
Journal Name
Baghdad Science Journal
Structural characterization of gamma irradiated ZnS thin films
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The effects of gamma irradiation on the structure of ZnS films , which preparing by flash evaporation method, are studied using XRD. Two peaks of (111), (220) orientations are appeared in X ray chart indicating the cubic phase of the films .The lattice parameter, grain size, average internal stress, microstrain, dislocation density and degree of preferred orientation in the film are calculated and correlated with gamma irradiation.

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Publication Date
Sun Sep 05 2010
Journal Name
Baghdad Science Journal
The Effects of ? – Rays on The Optical Constants of ZnS Thin Films
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ZnS thin films were grown onto glass substrates by flash evaporation technique, the effects of ? – rays on the optical constants of ZnS these films were studied. It was found that ? – rays affected all the parameters under investigation.

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Publication Date
Mon Oct 23 2023
Journal Name
Journal Of Optics
Studying the effect of cadmium chloride and thiourea concentrations on the structural and optical properties of CdS films deposited using the spray pyrolysis technique
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Publication Date
Sun Nov 01 2020
Journal Name
Iop Conference Series: Materials Science And Engineering
Effect of Germanium Content on the Optical Constants of Ge<sub>x</sub>S<sub>1-x</sub> Thin Films
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Abstract<p>In this study the alloys Ge <sub>x</sub>S<sub>1-x</sub> with different Ge content (x=0, 0.1,0.2 and 0.3) wt.% have been successfully prepared by evacuated quartz tube under vacuum pressure (10<sup>−2</sup>Torr), whereas Ge xS<sub>1-x</sub> thin films were prepared by thermal evaporation technique under vacuum (10<sup>−5</sup>Torr) with (x=0,0.1,0.2 and 0.3). The optical properties measurements shows that the optical energy gap decrease from (3.4 to 3 eV) with the increase of x content, the optical constants declare significant variation with x content variation.</p>
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