In this work, an anti-reflection coating was prepared in the region (400-1000) nm of wavelength, with a double layer of silicon dioxide (SiO₂) as an inner layer and the second layer of the mixture (SiO₂) and titanium dioxide (TiO₂) with certain ratios, as an outer layer using the chemical spraying method with a number of 6 sprays of layer SiO₂ and 12 sprays of layer SiO₂ - TiO₂. Using the method of chemical spraying deposited on the glass as a substrate with a different number of sprays of SiO₂, and a fixed number of TiO₂-SiO₂. The optical and structural properties were determined using UV-Vis spectroscopy and atomic force mi

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Various Hall Effects have been successfully observed in samples of n-type indium antimonide with values for conductivity, energy gap, Hall mobility and Hall coefficient all agreeing with theory. A particular interest in developing a method for obtaining accurate values of carrier concentrations in semiconductor samples has been fulfilled with an experimental result of (1.6×1016 cm-3 ±10.7%) giving a percentage difference of (6.7%) to a quoted value of (1.5×1016cm-3) at (77K) using an (80mW C.W. CO2) laser beam at (10.6μm) to illuminate a similar sample of n-type indium antimonide, an "Optical" Hall effect has been observed. Although some doubt has been raised as to the validity of effect i.e. "thermal" rather than "Optical", values o

In this work Nano crystalline (Cu2S) thin films pure and doped 3% Al with a thickness of 400±20 nm was precipitated by thermic steaming technicality on glass substrate beneath a vacuum of ~ 2 × 10− 6 mbar at R.T to survey the influence of doping and annealing after doping at 573 K for one hour on its structural, electrical and visual properties. Structural properties of these movies are attainment using X-ray variation (XRD) which showed Cu2S phase with polycrystalline in nature and forming hexagonal temple ,with the distinguish trend along the (220) grade, varying crystallites size from (42.1-62.06) nm after doping and annealing. AFM investigations of these films show that increase average grain size from 105.05 nm to 146.54 nm

Two series of bent and liner core mesogen containing 1,2,4-traizole ring [VI]a,g and series were synthesized by many steps starting from esterification of isophthalic acid and terephathalic acid with methanol to yield diester compound [I]a,b which was converted to their acid hydrazide [II]a,b and the acid hydrazide reacted with ammonium thiocyanate or diester reacted with thiosemicarbazide to yield compounds [III]a,b. Then cyclization by 4% NaOH to yielded 1,2,4 traizole-3- thiol compounds [IV]a,b , afterword adding hydrazine hydrate to yield compounds [V]a,b. These compounds condensated with different substituted aldehyde to give new Schiff bases[VI]a,b ,[VII]a,b . Also , reaction acid hydrazide [II]a,b with aldehyde [VII] to yielded Schif

In this research the a-As flims have been prepared by thermal evaporation with thickness 250 nm and rata of deposition r_d(1.04nm/sec) as function to annealing temperature (373 and 473K), from XRD analysis we can see that the degree of crystalline increase with T_a, and I-V characteristic for dark and illumination shows that forward bias current varieties approximately exponentially with voltage bias. Also we found that the quality factor and saturation current dependence on annealing temperatures.

In this research the a-As flims have been prepared by thermal evaporation with thickness 250 nm and rata of deposition (1.04nm/sec) as function to annealing temperature (373 and 373K), from XRD analysis we can see that the degree of crystalline increase with , and I-V characteristic for dark and illumination shows that forward bias current varieties approximately exponentially with voltage bias. Also we found that the quality factor and saturation current dependence on annealing temperatures.