A hand lay-up method was used to prepare Epoxy/ metal composites. Epoxy resin (EP) was used as a matrix with metal particles (Al, Cu, and Fe) as fillers.
The preparation method includes preparing square panels of composites with different weight percentage of fillers (10, 20, 30, 40, and 50%). Standard specimens (88mm in diameter) for thermal conductivity tests were prepared to measure thermal conductivity kexp.The result of experimental thermal conductivity kexp, for EP/metal composites show that, kexp increase with increasing weight percentage, For EP/ Al and EP/Cu composites, and it have have maximum values of 0.33 and 0.35 W/m.K, respectively. While kexp for EP/ Fe composite show slight increase with maximum value of 0.186 W/m.K. The results show that the best values for thermal conductivity is for EP/Cu composite which has the maximum value of kexp 0.35 W/m.K.
Various heavy metals, cations and anions of the Tigris River water in Baghdad regionwere studied during the winter, spring, summer and autumn of 2009, for 4 samplingsites. In the present investigation the levels of studied heavy metals, cations and anionswere found in the range of (0.011-0.333 mg/L) for As, in the water samples(undetectable-0.0043 mg/L) for Sb,( 0.011-0.080 mg/L) for Ti, (0.150-0.730 mg/L) forV, (0.01-1.06 mg/L) for Fe, (0.1-0.4 mg/L) for Zn, (0.011-0.15 mg/L) for Pb, (0.01-0.05mg/L) for Cd, (0.01-0.04 mg/L) for Ni, (50-290 mg/L) for Ca, (97-270 mg/L) for Mg,(0.65-1.74 mg/L) for K, (11-38.33) for Na, (35-113 mg/L) for Cl, (150-256 mg/L) forHCO3, (96-479 mg/L) for SO4, (0.93-3.9 mg/L) for NO3 and (undetectable - 0.360 mg/L)f
... Show MoreThin films of highly pure (99.999%) Tellurium was prepared by high vacuum technique (5*10-5torr), on glass substrates .Thin films have thickness 0.6m was evaporated by thermal evaporation technique. The film deposited was annealed for one hour in vacuum of (5*10-4torr) at 373 and 423 K. Structural and electrical properties of the films are studies. The x-ray diffraction of the film represents a poly-crystalline nature in room temperature and annealed film but all films having different grain sizes. The d.c. electrical properties have been studied at low and at relatively high temperatures and show that the conductivity decreases with increasing temperature at all range of temperature. Two types of conduction mechanisms were found to d
... Show MoreAbstract
Metal cutting processes still represent the largest class of manufacturing operations. Turning is the most commonly employed material removal process. This research focuses on analysis of the thermal field of the oblique machining process. Finite element method (FEM) software DEFORM 3D V10.2 was used together with experimental work carried out using infrared image equipment, which include both hardware and software simulations. The thermal experiments are conducted with AA6063-T6, using different tool obliquity, cutting speeds and feed rates. The results show that the temperature relatively decreased when tool obliquity increases at different cutting speeds and feed rates, also it
... Show MoreThin a-:H films were grown successfully by fabrication of designated ingot followed by evaporation onto glass slides. A range of growth conditions, Ge contents, dopant concentration (Al and As), and substrate temperature, were employed. Stoichiometry of the thin films composition was confirmed using standard surface techniques. The structure of all films was amorphous. Film composition and deposition parameters were investigated for their bearing on film electrical and optical properties. More than one transport mechanism is indicated. It was observed that increasing substrate temperature, Ge contents, and dopant concentration lead to a decrease in the optical energy gap of those films. The role of the deposition conditions on value
... Show MorePolycrystalline ingots of cadmium telluride have been synthesized using the direct
reaction technique, by fusing initial component consisting from pure elements in
stoichiometric ratio inside quartz ampoule is evacuated 10-6 torr cadmium telluride has
been grown under temperature at (1070) oC for (16) hr. was used in this study, the phases
observed in growing CdTe compound depend on the temperature used during the growth
process. Crystallography studies to CdTe compound was determined by X-ray diffraction
technique, which it has zinc blend structure and cubic unit cell, which lattice constants is
a=6.478
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