Nowadays power systems are huge networks that consist of electrical energy sources, static and lumped load components, connected over long distances by A.C. transmission lines. Voltage improvement is an important aspect of the power system. If the issue is not dealt with properly, may lead to voltage collapse.  In this paper, HVDC links/bipolar connections were inserted in a power system in order to improve the voltage profile. The load flow was simulated by Electrical Transient Analyzer Program (ETAP.16) program in which Newton- Raphson method is used. The load flow simulation studies show a significant enhancement of the power system performance after applying HVDC links on Kurdistan power systems. Th

     Serious gases have been highly related to being prejudiced against human life within the environment. The evolution of a trustworthy gas sensor with an elevated response is of major importance for detecting various hazardous gases. Titanium dioxide (TiO₂) nanotubes (TNTs) are favorable candidates with considerable potential and stellar performance in gas sensor applications. In this work, we have studied the effect of voltage on preparing TiO₂ nanotubular arrays via the anodization technique for gas sensor applications. A simple electrochemical anodization approach was used to synthesize titanium dioxide nanotubes. Diverse techniques of characterization were used to evaluate TNTs. The results gained from fi

  Hetero junctions are fabricated by depositing antimony (Sb) and Al films on n-type single crystal(c-Si) wafers by the method of vacuum evaporation with thickness (0.25µm), with rate of deposition equals to 2.77 Ã…/sec, all samples are annealed in a vacuum for one hour at 473K. The tests have shown that all the films have polycrystalline structure for all Sb films. The barrier heights in (Sb/c-Si) junction was found to be equal 0.825eV, but(Al/c-Si) junction ohmic contact. Current-voltage measurements confirm this behaviour.

Abstract. In this work, Bi2O3 was deposited as a thin film of different thickness (400, 500, and 600 ±20 nm) by using thermal oxidation at 573 K with ambient oxygen of evaporated bismuth (Bi) thin films in a vacuum on glass substrate and on Si wafer to produce n-Bi2O3/p-Si heterojunction. The effect of thickness on the structural, electrical, surface and optical properties of Bi2O3 thin films was studied. XRD analysis reveals that all the as deposited Bi2O3 films show polycrystalline tetragonal structure, with preferential orientation in the (201) direction, without any change in structure due to increase of film thickness. AFM and SEM images are used to investigate the influences of film thickness on surface properties. The optical measur

In this research, thin films of CdO: Mg and n-CdO: Mg/ p-Si heterojunction with thickness (500±50) nm have been deposited at R.T (300 K) by thermal evaporation technique. These samples have been annealed at different annealing temperatures (373 and 473) K for one hour. Structural, optical and electrical properties of {CdO: Mg (1%)} films deposited on glass substrate as a function of annealing temperature are studied in detail. The C-V measurement of n-CdO: Mg/ p-Si heterojunction (HJ) at frequency (100 KHz) at different annealing temperatures have shown that these HJ were of abrupt type and the builtin potential (Vbi) increase as the annealing temperature increases. The I-V characteristics of heterojunction prepared under dark case at

     In this work, lead oxide (PbO) thin films were deposited using D.C. sputtering method on a surface of glass substrates and then thermally annealed at a temperature of 473K with annealing times of (1,2 and 3) hours. The structural, morphological, and optical properties of films were determined using X-ray diffraction (XRD), atomic force microscopy (AFM), FT-IR, and UV-Visible spectroscopy. The structure studies confirmed that PbO films are polycrystalline structures in an orthorhombic phase with average grain size (24.51, 29.64, 46.49, 16) nm with increasing annealing time. From AFM, the roughness of the film surface  (3.26, 1.76, 1.61, 1.79) nm as the film annealing time increases. The optical band gap values of the PbO thin fi

Crystalline NiO and doped with rare earth lutetium oxide (Lu₂O₃) at (6%wt)., have been prepared by pulsed laser deposition (PLD), The Q-switched Nd:YAG laser beam was incident at an angle of 45° on the target surface, and the energy of the laser was 500 mJ, wavelengths of 532nm, and frequency 6Hz. XRD pattern shows all doped and undoped films are polycrystalline, and cubic structure. The 200nm thin NiO showed an average optical energy band gap of 3.4eV, and increase with doping at 6% Lu₂O₃. The Hall Effect measurements confirmed that holes were predominant charges in the conduction process (i.e p-type). D.C conductivity measurements with temp-erature (T), show