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The effect of anode temperature on the Optical characteristic of Se films prepared by direct current planar magnetron sputtering
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This work describes, selenium (Se) films were deposited on clean glass substrates by dc planar magnetron sputtering technique.The dependence of sputtering deposition rate of Se film deposited on pressure and DC power has been studied. The optimum argon pressure has range (4x10-1 -8x10-2 )mbar. The optical properties such as absorption coefficient (α) was determined using the absorbance and transmission measurement from UnicoUV-2102 PC spectrophotometer, at normal incidence of light in the wavelength range of 200-850 nm. And also we calculated optical constants(refractive index (n), dielectric constant (εi,r), and Extinction coefficient (κ) for selenium films.

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Publication Date
Sun Jul 01 1990
Journal Name
Bulletin Of The Iraq Natural History Museum (p-issn: 1017-8678 , E-issn: 2311-9799)
THE INFLUENCE OF TEMPERATURE AND HUMIDITY ON THE BIOLOGY OF THE HOUSE DUST MITE DERMATOPHAGOIDES PTERONYSSINUS TROUESSART 1897 (ACARI : PYROGLYPHIDAE)
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Duration of each developmental stage of the house dust mite Dermatophagoides pteronyssinus together with the mortality percentage were observed at a combination of five different temperatures namely 20C°, 22.5C°, 25C°, 27.5C° and 30C° and four different humidities namely 55%, 75%, 85% and 95% r. h. Results showed that temperature had the greatest effect on the life cycle period. The higher the temperature the shorter the life cycle was aid versa verea. On the other hand, humidity seems to be less effectiveness, though at the higher temperature and humidity no development was occured. Mortality among all temperatures and humidities appeared nearly the same, but at higher temperature and higher humidity and because of mould g

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Publication Date
Thu Jun 19 2025
Journal Name
Wasit Journal Of Sports Sciences
The motivational characteristic and its relationship to the performance of the court defense skill among Baghdad University volleyball team players
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Publication Date
Sun Oct 01 2023
Journal Name
Solid State Communications
Influence of In-dopant on the optoelectronic properties of thermal evaporated CuAlTe2 films
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Publication Date
Sun Oct 01 2023
Journal Name
Solid State Communications
Influence of In-dopant on the optoelectronic properties of thermal evaporated CuAlTe2 films
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In the current study, CuAl0.7In0.3Te2 thin films with 400 nm thickness were deposited on glass substrates using thermal evaporation technique. The films were annealed at various annealing temperatures of (473,573,673 and 773) K. Furthermore, the films were characterized by X-ray Diffraction spectroscopy (XRD), field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), and Ultra violet-visible (UV–vis). XRD patterns confirm that the films exhibit chalcopyrite structure and the predominant diffraction peak is oriented at (112). The grain size and surface roughness of the annealed films have been reported. Optical properties for the synthesized films including, absorbance, transmittance, dielectric constant, and refr

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Publication Date
Sun Nov 01 2015
Journal Name
Journal Of Engineering
Effects of Welding Parameters on Temperature Distribution and Tensile Strength of AA6061-T6 Welded by Friction Stir Welding
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The present research aims to study the effect of friction stir welding (FSW) parameters on temperature distribution and tensile strength of aluminum 6061-T6. Rotational and traverse speeds used were (500,1000,1400 rpm) and (14,40,112 mm/min) respectively. Results of mechanical tests showed that using 500rpm and 14mm/min speed give the best strength. A three- dimensional fully coupled thermal-stress finite element model via ANSYS software has been developed. The Rate dependent Johnson-Cook relation was utilized for elasto-plastic work deformations. Heat-transfer is formulated using a moving heat source, and later used the transient temperature outputs from the thermal analysis to determine equivalent stresses in the welde

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Publication Date
Thu Mar 01 2018
Journal Name
Ieee Systems Journal
A Comprehensive Survey of the Current Trends and Extensions for the Proxy Mobile IPv6 Protocol
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Publication Date
Wed Aug 09 2017
Journal Name
Ibn Al-haitham Journal For Pure And Applied Sciences
Influence of Simultaneous Doping of Tl on the Transition Temperature Tc and the Lattice Parameters of HgBa2Ca2Cu3O8+ δ Superconductors
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        In the present study, we have reported investigations on the effect of simultaneous substitution of Tl at the Hg site in the oxygen deficient HgOδ layer of Hg1-xTlxBa2Ca2Cu3O8+ δ cuprate superconductor. Bulk polycrystalline samples were prepared by the two-step solid state reaction process. It was observed that the grown Hg1-xTlxBa2Ca2Cu3O8+ δ corresponds to the 1223 phase. Electrical resistivity, using four probe technique, is used to find the transition temperature Tc. The highest Tc(0ffset) were 108, 102,113, 118, 125 and 121K for Hg1xTlxBa2Ca2Cu3O8+ δ with x = 0.0, 0.05, 0.10, 0.15, 0.20 and 0.25 respectively. The optimum Tc(off) of ~ 125 K and Tc(onset) ~ 136K   was fo

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Publication Date
Fri Jan 22 2021
Journal Name
International Journal Of Agricultural & Statistical Sciences
EFFECT OF GROWING MEDIA, NUTRIENT SOLUTION AND CONTROL OF FLOWERING ON THE PRODUCTIVITY OF THE CUCUMBER CULTIVATED BY THE SOILLESS CULTURE.
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Publication Date
Tue Sep 01 2020
Journal Name
Optik
Synthesis of Ag2O films by pulsed laser deposited on porous silicon as gas sensor application
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Publication Date
Wed Dec 18 2019
Journal Name
Baghdad Science Journal
Structural and Optical Properties for Nanostructure (Ag2O/Si & Psi) Films for Photodetector Applications
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Ag2O (Silver Oxide) is an important p-type (in chasm to most oxides which were n-type), with a high conductivity semiconductor. From the optical absorbance data, the energy gap value of the Ag2O thin films was 1.93 eV, where this value substantially depends on the production method, vacuum evaporation of silver, and optical properties of Ag2O thin films are also affected by the precipitation conditions. The n-type and p-type silicon substrates were used  with porous silicon wafers to precipitate  ±125 nm, as thick Ag2O thin film by thermal evaporation techniques in vacuum and via rapid thermal oxidation of 400oC and oxidation time 95 s, then characterized by measurement of

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