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Responsivity of porous silicon for blue visible light with high sensitivity
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In this work, porous silicon (PS) are fabricated using electrochemical etching (ECE) process for p-type crystalline silicon (c-Si) wafers of (100) orientation. The structural, morphological and electrical properties of PS synthesized at etching current density of (10, 20, 30) mA/cm2 at constant etching time 10 min are studied. From X-ray diffraction (XRD) measurement, the value of FWHM is in general decreases with increasing current density for p-type porous silicon (p-PS). Atomic force microscope (AFM) showed that for p-PS the average pore diameter decreases at 20 mA. Porous silicon which formed on silicon will be a junction so I-V characteristics have been studied in the dark to calculate ideality factor (n), and saturation current (Is) for these junctions. These junctions are used in photo sensors applications, where the photo sensors have been examined at blue light region. Sensitivity, rise and fall times have been calculated for this wavelength, the maximum value for sensitivity is (3797.6 %) at etching current density 10 mA/cm2 under blue light illumination at zero bias voltage.

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Publication Date
Tue Jun 20 2023
Journal Name
Baghdad Science Journal
Computation of Several Banhatti and Reven Invariants of Silicon Carbides
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Expressions for the molecular topological features of silicon carbide compounds are essential for quantitative structure-property and structure-activity interactions. Chemical Graph Theory is a subfield of computational chemistry that investigates topological indices of molecular networks that correlate well with the chemical characteristics of chemical compounds. In the modern age, topological indices are extremely important in the study of graph theory. Topological indices are critical tools for understanding the core topology of chemical structures while examining chemical substances. In this article, compute the first and second k-Banhatti index, modified first and second k-Banhatti index, first and second k-hyper Banhatti index, fir

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Publication Date
Sun Dec 07 2008
Journal Name
Baghdad Science Journal
Polar Gap Properties for Neutron StarWithin Light Cylinder Limits
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The huge magnetic fields of neutron star cause the nuclei of the stellar surface to form a tightly bound condensed layer. In this research some characteristics of polar gap and magnetosphere enclosed the star according to Sturrock Model were illustrated, positrons move out along the open field lines, and electrons flow to the stellar surface as in the related to Sturrock model. The magnetic field within polar gap areas, which is defined by the Irvin Radius (RL) decreases due to the expansion of the polar, resulting from the physical motion of the accreted material. The values of height gap at different distances from the star were estimated. The obtained results improve the most energetic positrons those with E? Emax radiate away their ener

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Publication Date
Sun Jan 01 2023
Journal Name
Water, Air, & Soil Pollution
Sunflower Husks Coated with Copper Oxide Nanoparticles for Reactive Blue 49 and Reactive Red 195 Removals: Adsorption Mechanisms, Thermodynamic, Kinetic, and Isotherm Studies
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Publication Date
Sun Jan 01 2023
Journal Name
Water, Air, And Soil Pollution
Sunflower Husks Coated with Copper Oxide Nanoparticles for Reactive Blue 49 and Reactive Red 195 Removals: Adsorption Mechanisms, Thermodynamic, Kinetic, and Isotherm Studies
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The adsorption process of reactive blue 49 (RB49) dye and reactive red 195 (RR195) dye from an aqueous solutions was explored using a novel adsorbent produced from the sunflower husks encapsulated with copper oxide nanoparticle (CSFH). Primarily, the features of a CSFH, such as surface morphology, functional groups, and structure, were characterized. It was determined that coating the sunflower husks with copper oxide nanoparticles greatly improved the surface and structural properties related to the adsorption capacity. The adsorption process was successful, with a removal efficiency of 97% for RB49 and 98% for RR195 under optimal operating conditions, contact time of 180 min, pH of 7, agitation speed of 150 rpm, initial dye concentration

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Publication Date
Fri Dec 20 2019
Journal Name
Iet Circuits, Devices & Systems
Multi‐bit error control coding with limited correction for high‐performance and energy‐efficient network on chip
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In the presence of deep submicron noise, providing reliable and energy‐efficient network on‐chip operation is becoming a challenging objective. In this study, the authors propose a hybrid automatic repeat request (HARQ)‐based coding scheme that simultaneously reduces the crosstalk induced bus delay and provides multi‐bit error protection while achieving high‐energy savings. This is achieved by calculating two‐dimensional parities and duplicating all the bits, which provide single error correction and six errors detection. The error correction reduces the performance degradation caused by retransmissions, which when combined with voltage swing reduction, due to its high error detection, high‐energy savings are achieved. The res

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Publication Date
Sun Jun 30 2013
Journal Name
Iraqi Journal Of Chemical And Petroleum Engineering
Reverse Osmosis Polyamide Membrane for the Removal of Blue and Yellow Dye from Waste Water
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The present work aims to study the removal of dyes from wastewater by reverse osmosis process. Two dyes were used direct blue 6, and direct yellow. Experiments were performed with feed concentration (75 – 450 ppm), operation temperature (30 – 50 oC) and time (0.2 – 2.0 hr). The membrane used is thin film composite membrane (TFC). It was found that modal permeate concentration decreases with increasing feed concentration and time operating, while permeate concentration increases with increasing feed temperature. Also it was found that product rate increase with increasing temperature, but it decrease with increasing feed concentration and time. The concentration of reject solution showed an increase with increasing feed concentratio

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Publication Date
Sun Jan 01 2017
Journal Name
Iraqi Journal Of Medical Sciences
ISOLATION, IDENTIFICATION AND DETERMINATION OF ANTIFUNGAL SENSITIVITY OF FUNGI ISOLATED FROM A SAMPLE OF PATIENTS WITH RHINOSINUSITIS IN BAGHDAD CITY
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Publication Date
Thu Aug 13 2020
Journal Name
Journal Of Imaging
On Computational Aspects of Krawtchouk Polynomials for High Orders
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Discrete Krawtchouk polynomials are widely utilized in different fields for their remarkable characteristics, specifically, the localization property. Discrete orthogonal moments are utilized as a feature descriptor for images and video frames in computer vision applications. In this paper, we present a new method for computing discrete Krawtchouk polynomial coefficients swiftly and efficiently. The presented method proposes a new initial value that does not tend to be zero as the polynomial size increases. In addition, a combination of the existing recurrence relations is presented which are in the n- and x-directions. The utilized recurrence relations are developed to reduce the computational cost. The proposed method computes app

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Publication Date
Sat Jan 01 2022
Journal Name
Ieee Access
Fast Computation of Hahn Polynomials for High Order Moments
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Publication Date
Sat Jul 01 2017
Journal Name
Journal Of Nano Research
Electroluminescence Devices from Quantum Dots with TPD Polymer White Light Generation
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Quantum dots of CdSe, CdS and ZnS QDs were prepared by chemical reaction and used to fabricate organic quantum dot hybrid junction device. QD-LEDs were fabricated using ITO/TPD: PMMA/CdSe/Al, ITO/TPD: PMMA/CdS/Al and ITO/TPD: PMMA/ZnS/Al QDs devices which synthesized by phase segregation method. The hybrid white light emitting devices consists, of two-layers deposited successively on the ITO glass substrate; the first layer was of N, N’-bis (3-methylphenyl)-N, N’-bis (phenyl) benzidine (TPD) polymer mixed with polymethyl methacrylate (PMMA) polymers in ratio 1:1, while the second layer was 0.5wt% from each type of the (CdSe, CdS and ZnS) QDs for each device.The optical properties of QDs were characterized by UV-Vis. and photolum

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