Abstract: In the present work, the heat transfer of Nano Aluminum Oxide -NAO- has been studied practically to define the appropriate insulation conditions.  This study focuses on finding of the amount of heat transfer through a glass substrate that is coated with nanoalumina doped on PMMA matrix. The optical and thermal properties were systematically investigated. The density of heat flow rate, was calculated in the range values (240-260) W/m2 while the optimum values confine between (250-260) W/m2 at temp. (25-35)C^o. The results showed that the thermal insulation of the sample was significantly enhanced at temp. (30-50)C^o. The simulated net heat transfer through window decreased linearly with incr

Abstract. This study presents experimental and numerical investigation on the effectiveness of electrode geometry on flushing and debris removal in Electrical Discharge Drilling (EDD) process. A new electrode geometry, namely side-cut electrode, was designed and manufactured based on circular electrode geometry. Several drilling operations were performed on stainless steel 304 using rotary tubular electrodes with circular and side-cut geometries. Drilling performance was characterized by Material Removal Rate (MRR), Electrode Wear Rate (EWR), and Tool Wear Ratio (TWR). Dimensional features and surface quality of drilled holes were evaluated based on Overcut (OC), Hole Depth (HD), and Surface Roughness (SR). Three-dimensional

      In this research, the structural and optical properties were studied for Bi2O3 and Bi2O3: Al  thin  films  with   different  doping   ratios  ( 1, 2, 3 ) %  ,  which  were  prepared  by  thermal evaporation  technique under  vacuum , with  thickness  ( 450 ± 20 ) nm  deposited  on  glass substrates  at  room  temperature ( 300 ) K , Structural   measurements by ( XRD)  techniques demonstrated   that  all   samples  prepared   have  polycrystalline  structure   with  tetragonal structure and  a preferred orientation  [ 201 ]   the &n

CdS and CdTe thin films were thermally deposited onto glass substrate. The CdCl2 layer was deposited onto CdS surface. These followed by annealing for different duration times to modify the surface and interface of the junction. The diffraction patterns showed that the intensity of the peaks increased with the CdCl2/annealed treatment, and the grain sizes are increased after CdCl2/annealed treatment

In this study the melting point and hardness of the paraffin wax was improved by mixing it with 1:1 ratio of micro crystalline wax then adding weight percentage wt% of locally produced nano particles (CuO,ZnO,AI2O3 and bentonite ) for each addition to the wax mixture. The results showed an increase in the melting point and hardness values of the prepared samples by increasing the weight percentage of each nano particles additives. . It was found that the addition of nano bentonite to the wax mixture gave high melting point values (122.5°C)and hardness (81.2)followed by melting point value (97°C)and hardness(68.2)resulting from the addition of CuO nano particles to the wax mixture compared to other used nano particles.

The thermal evaporation technique was used to prepare the Ni-Cr films with a thickness of 200 nm and a rate of deposition  of 0.22nm/Sec. The annealing was performed at 373 and 473 K. The structural and optical analyses of the grown layers were achieved and XRD patterns showed amorphous structure transferred to polycrystalline for film annealed at 373 and 473 K. AFM analysis showed that the surface of Ni-Cr films is homogenous and the average roughness, optical energy gap and absorption coefficient were increased with increasing annealing temperature (T_a).

Using photo electrochemical etching technique (PEC), porous silicon (PS) layers were produced on n-type silicon (Si) wafers to generate porous silicon for n-type with an orientation of (111) The results of etching time were investigated at: (5,10,15 min). X-ray diffraction experiments revealed differences between the surface of the sample sheet and the synthesized porous silicon. The largest crystal size is (30 nm) and the lowest crystal size is (28.6 nm) The analysis of Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscope (FESEM) were used to research the morphology of porous silicon layer. As etching time increased, AFM findings showed that root mean square (RMS) of roughness and po