الأثر V بالنسبة إلى   sinshT و خواصه قد تم دراسته في هذا البحث حيث تم دراسة علاقة الأثر المخلص والاثر المنتهى التولد والاثر المنفصل وربطها بالمؤثرات المتباينة حيث تم بهنة العلاقات التالية ان الاثر اذا وفقط اذا مقاس في حالة كون المؤثر هو عديم القوة وكذلك في حالة كون المؤثر شامل فان الاثر هو منتهي التولد اي ان الغضاء هو منتهي التولد وايضا تم برهن ان الاثر مخلص لكل مؤثر مقيد وك\لك قد تم التحقق من انه لاي مؤثر مقي

This study delves into the properties of the associated act V over the monoid S of sinshT. It examines the relationship between faithful, finitely generated, and separated acts, as well as their connections to one-to-one and onto operators. Additionally, the correlation between acts over a monoid and modules over a ring is explored. Specifically, it is established that  functions as an act over S if and only if  functions as module, where T represents a nilpotent operator. Furthermore, it is proved that when T is onto operator and  is finitely generated, is guaranteed to be finite-dimensional. Prove that for any bounded operator the following,  is acting over S if and only if  is a module where T is a nilpotent operator, is a

InSb alloy was prepared then InSb:Bi films have been prepared successfully by thermal evaporation technique on glass substrate at Ts=423K. The variation of activation energies(Ea1,Ea2)of d.c conductivity with annealing temperature (303, 373, 423, 473, 523 and 573)K were measured, it is found that its values increases with increasing annealing temperature. To show the type of the films, the Hall and thermoelectric power were measured. The activation energy of the thermoelectric power is much smaller than for d.c conductivity and increases with increasing annealing temperature .The mobility and carrier concentration has been measured also.

The structure, optical, and electrical properties of SnSe and its application as photovoltaic device has been reported widely. The reasons for interest in SnSe due to the magnificent optoelectronic properties with other encouraging properties. The most applications that in this area are PV devices and batteries. In this study tin selenide structure, optical properties and surface morphology were investigated and studies. Thin-film of SnSe were deposit on p-Si substrates to establish a junction as solar cells. Different annealing temperatures (as prepared, 125,200, 275) °C effects on SnSe thin films were investigated. The structure properties of SnSe was studied through X-ray diffraction, and the results appears the increasing of the peaks

Abstract

Characterized by the Ordinary Least Squares (OLS) on Maximum Likelihood for the greatest possible way that the exact moments are known , which means that it can be found, while the other method they are unknown, but approximations to their biases correct to 0(n^-1) can be obtained by standard methods. In our research expressions for approximations to the biases of the ML estimators (the regression coefficients and scale parameter) for linear (type 1) Extreme Value Regression Model for Largest Values are presented by using the advanced approach depends on finding the first derivative, second and third.

In this paper the oscillation criterion was investigated for all solutions of the third-order half linear neutral differential equations. Some necessary and sufficient conditions are established for every solution of (a(t)[(x(t)±p(t)x(?(t) ) )^'' ]^? )^'+q(t) x^? (?(t) )=0, t?t_0, to be oscillatory. Examples are given to illustrate our main results.

in this paper fourth order kutta method has been used to find the numerical solution for different types of first liner