Explain in this study, thickness has an inverse relationship with electrical resistivity and a linear relationship with Grain boundary scattering. According to the (Fuchs-Sondheier, Mayadas-Shatzkces) model, grain boundary scattering leads To an Increase in electrical Resistivity. The surface scattering Coefficient  of Ag, which Fuchs-Sondheier and Mayadas-Shatzkces measured at , Ag's grain boundary reflection coefficient , which Mayadas-Shatzkces measured at , If the concentration of material has an effect on metal's electrical properties, According to this silver is a good electrical conductor and is used frequently in electrical and electronic circuits.

 In this work, plasma parameters such as (electron temperature (Te), electron density (ne), plasma frequency (fp) and Debye length (λD)) were studied using spectral analysis techniques. The spectrum of the plasma was recorded with different energy values, SnO2 and ZnO anesthetized at a different ratio (X = 0.2, 0.4 and 0.6) were recorded. Spectral study of this mixing in the air. The results showed electron density and electron temperature increase in zinc oxide: tin oxide alloy targets. It was located  that  The intensity of the lines increases in different laser peak powers when the laser peak power increases and then decreases when the force continues to increase.

The structural, optical properties of cupper indium gallium selenite (CuIn1-xGaxSe) have been studied. CuIn1-xGaxSe thin films for x=0.6 have been prepared by thermal evaporation technique, of 2000±20 nm thickness, with rate of deposition 2±0.1 nm/sec, on glass substrate at room temperature. Heat treatment has been carried out in the range (373-773) K for 1 hour. It demonstrated from the XRD method that all the as-deposited and annealed films have polycrystalline structure of multiphase. The optical measurement of the CIGS thin films conformed that they have, direct allowed energy gap equal to 1.7 eV. The values of some important optical parameters of the studied films such as (absorption coefficient, refractive index, extinction coeffici

 The effect of thermal annealing on some structural and optical  properties of ZnSe thin films was studied which prepared by thermal evaporation method with (550±20) nm thickness and annealing at (373,473)K for (2h), By using X-ray diffraction technique structural properties studied and showed that the films are crystalline nature and have ( cubic structure ) .From the observed results after heating treatment, We found that the annealing to perform decreases in grain size and increases in dislocation and observed the optical properties increase in absorption and decrease in transmission. From absorption spectra optical energy gap calculated about (2.66,2.68)eV which decreases value after heating treatment

Effect of the thermal annealing at 400oC for 2 hours and Argon laser radiation for half hour on the optical properties of AgAlS2 thin films, prepared on glass slides by chemical spray pyrolysis at 360oC with (0.18±0.05) μm thickness .The optical characteristics of the prepared thin films have been investigated by UV/Vis spectrophotometer in the wavelength range (300 – 1100)nm .The films have a direct allow electronic transition with optical energy (Eg) values decreased from (2.25) eV for untreated thin films to (2.10) eV for the annealed films and to (2.00) eV for the radiated films. The maximum value of the refractive index (n) for all thin films are given about (2.6). Also the extinction coefficient (K) and the real and imaginary d

     In this study, cadmium oxide (CdO) was deposited on glass bases by thermal chemical spraying technique at three concentrations (0.05, 0.1, 0.15) M and then was irradiated by CO₂ laser with 10.6 μm wave length and 1W power. The results of the atomic force microscope AFM test showed that the surfaces of these CdO thin films were homogenous and that the laser irradiated effect resulted in decreasing the roughness of the surface as well as the heights of the granular peaks, indicating a greater uniformity and homogeneity of the surfaces. The optical properties were studied to determine laser effect. The results of optical tests of these thin films showed that the photoluminescence spectra and absorption s

     The ferric oxide nanoparticles (Fe₂O₃) which are deposited at interface which is related to hole collecting buffer layer [poly(3,4-ethyl-enedioxythiophene): poly(styrene-sulfonate) (PEDOT: PSS)] as well as regioregular poly(3-hexyl-thiophene): Zinc oxide nanoparticles (P3HT): (ZnO) active layer have been considerable increasing the performance of solar cell. Also, the solar cell devices have been fabricated with a weight ratio of 1:0.7, 1:0.8, 1:0.9 and 1:1 of P3HT and ZnO, respectively. In addition, photo physical characteristics regarding such devices with different value of the weight ratio were examined. This work is indicating that the absorption spectrum related to blend will be broad

This work aims to fabricate two types of plasmonic nanostructures by electrical exploding wire (EEW) technique and study the effects of the different morphologies of these nanostructures on the absorption spectra and Surface-Enhanced Raman Scattering (SERS) activities, using Rhodamine 6G as a probe molecule. The structural properties of these nanostructures were examined using X-Ray diffraction (XRD). The morphological properties were examined using field emission scanning electron microscopy (FESEM) and scanning transmission electron microscopy (STEM). The absorption spectra of the mixed R6G laser dye (concentration 1×10^-6 M) with prepared nanostructures were examined by double beam UV-Vis Spectrophotometer. The Raman spe

Thin films of (Cu2S)100-x( SnS2 )x at X=[ 30,40, &50)]% with thickness (0.9±0.03)µm , had been prepared by chemical spray pyrolysis method on glass substrates at 573 K. These films were then annealed under low pressure of(10-2) mbar ,373)423&473)K for one hour . This research includes , studying the the optical properties of (Cu2S)100-x-(SnS2)x at X=[ 30,40, &50)]% .Moreover studying the effect of annealing on their optical properties , in order to fabricate films with high stability and transmittance that can be used in solar cells. The transmittance and absorbance spectra had been recorded in the wavelength range (310 - 1100) nm in order to study the optical properties . It was found that these films had direct optical band

Films of CdSe have been prepared by evaporation technique with thickness 1µm. Doping with Cu was achieved using annealing under argon atmosphere . The Structure properties of these films are investigated by X-ray diffraction analysis. The effect of Cu doping on the orientation , relative intensity, grain size and the lattice constant has been studied. The pure CdSe films have been found consist of amorphous structure with very small peak at (002) plane. The films were polycrystalline for doped CdSe with (1&2wt%) Cu contents and with lattice constant (a=3.741,c=7.096)A°, and it has better crystallinty as the Cu contents increased to (3&5wt%) Cu. The reflections from [(002), (102). (110), (112), and (201)]planes are more prominen