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ZnO Characterization of ZnO/GaAs heterojunction: ZnO thin films
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ZnO thin films have been prepared by pulse laser deposition technique at room temperatures (RT). These films were deposited on GaAs substrate to form the ZnO/GaAs heterojunction solar cell. The effect of annealing temperatures at ( RT,100, 200)K on structural and optical properties of ZnO thin films has been investigated. The X-ray diffraction analysis indicated that all films have hexagonal polycrystalline structure. AFM shows that the grains uniformly distributed with homogeneous structure. The optical absorption spectra showed that all films have direct energy gap. The band gap energy of these films decreased with increasing annealing temperatures.  From the electrical properties, the carriers have n-type conductivity.  From C-V measurement of ZnO/GaAs heterojunciton solar cell at frequency 100, 200 KHz, It is found that built–in potential (Vbi) increases with increase frequency. Also, from I-V characteristic it is observed that the ideality factor is 2.7. Short-circuit current (Isc) is 4.0mA/cm2, open circuit voltage (Voc) is 0.5V, fill factor ( F.F) is 0.7  and the efficiency is about 6.0 %.

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Publication Date
Tue Mar 30 2021
Journal Name
Iraqi Journal Of Science
Cu-ZnO Nanostructures Synthesis and Characterization
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5wt% copper doped zinc oxide (Cu-ZnO) nanostructures were prepared via the hydrothermal technique at different temperatures of 70, 100, 130, 160 and 190oC.  UV spectroscopy, FE-SEM microscopy, XRD crystallography, and EDS measurements were used for nanostructure characterization. UV spectroscopy indicated a red shift for the absorption peaks, and hence a blue shift for the energy gap values, as temperature increased from 70 to 190oC. FE-SEM microscopy showed an increase in the average lengths and diameters of the nanostructures following a similar increase in temperature. XRD crystallography indicated decent structural patterns for Cu-ZnO nanostructures with an increase in crystallite size upon temperature incr

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Publication Date
Wed Dec 01 2021
Journal Name
Iraqi Journal Of Physics
Impact of Aluminum Oxide Content on the Structural and Optical Properties of ZnO: AlO Thin Films
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AlO-doped ZnO nanocrystalline thin films from with nano crystallite size in the range (19-15 nm) were fabricated by pulsed laser deposition technique. The reduction of crystallite size by increasing of doping ratio shift the bandgap to IR region the optical band gap decreases in a consistent manner, from 3.21to 2.1 eV by increasing AlO doping ratio from 0 to 7wt% but then returns to grow up to 3.21 eV by a further increase the doping ratio. The bandgap increment obtained for 9% AlO dopant concentration can be clarified in terms of the Burstein–Moss effect whereas the aluminum donor atom increased the carrier's concentration which in turn shifts the Fermi level and widened the bandgap (blue-shift). The engineering of the bandgap by low

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Publication Date
Thu Mar 09 2017
Journal Name
Ibn Al-haitham Journal For Pure And Applied Sciences
Effect of Gamma Ray Irradiation on Structural and Optical Properties of ZnO Thin Films
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In this research, the structural and optical measurements were made on the Zinc oxide (ZnO) films prepared by two methods once by using chemical spray pyrolysis technique, and another by using thermal evaporation technique before and after irradiation by Gamma –Ray (γ – rays) from source type (Cs 137) with an energy (0.611)MeV as a function of gamma dose (0.15,0.3 and 0.45) Gy. The thickness of all films prepared by two method was about (300 ± 50) nm. XRD is used to characterize the structural properties, the results demonstrated that all samples prepared by two method before and after irradiation have polycrystalline structure with a preferred orientation (002).Also it showed that the structural properties are weakly

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Publication Date
Fri Jan 11 2019
Journal Name
Iraqi Journal Of Physics
Effect of thickness on the optical properties of ZnO thin films prepared by pulsed laser deposition technique (PLD)
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Zinc Oxide (ZnO) thin films of different thickness were prepared
on ultrasonically cleaned corning glass substrate, by pulsed laser
deposition technique (PLD) at room temperature. Since most
application of ZnO thin film are certainly related to its optical
properties, so the optical properties of ZnO thin film in the
wavelength range (300-1100) nm were studied, it was observed that
all ZnO films have high transmittance (˃ 80 %) in the wavelength
region (400-1100) nm and it increase as the film thickness increase,
using the optical transmittance to calculate optical energy gap (Eg
opt)
show that (Eg
opt) of a direct allowed transition and its value nearly
constant (~ 3.2 eV) for all film thickness (150

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Publication Date
Tue Feb 12 2019
Journal Name
Iraqi Journal Of Physics
Structural and optical properties of ZnO doped Mg thin films deposited by pulse laser deposition (PLD)
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This paper reports the effect of Mg doping on structural and optical properties of ZnO prepared by pulse laser deposition (PLD). The films deposited on glass substrate using Nd:YAG laser (1064 nm) as the light source. The structure and optical properties were characterized by X-ray diffraction (XRD) and transmittance measurements. The films grown have a polycrystalline wurtzite structure and high transmission in the UV-Vis (300-900) nm. The optical energy gap of ZnO:Mg thin films could be controlled between (3.2eV and 3.9eV). The refractive index of ZnO:Mg thin films decreases with Mg doping. The extinction coefficient and the complex dielectric constant were also investigate.

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Publication Date
Sat Apr 30 2022
Journal Name
Iraqi Journal Of Science
The Effect of Silver Oxide on the Structural and Optical Properties of ZnO: AgO Thin Films
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Compounds from ZnO doped with AgO in different ratio (0,3,5,7, and 9)wt.% were prepared.Thin films from the prepared compounds were deposited on a glass substrate using the pulsed laser deposition method. The XRD pattern confirmed the presence of a single-phase hexagonal wurtzite ZnO structure, without the presence of a secondary phase. AFM measurements showed an increase in both average grain size and average surface roughness with increasing concentration content of (AgO).The crystallite size of ZnO of the main peak corresponding to the preferred plane of crystal growth named (100) increases from 17.8 to 22.5nm by increasing of AgO doping ratio  from 0 to 9%. The absorbance and transmittance in the wavelength range (350-1100 nm) were

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Publication Date
Thu May 11 2017
Journal Name
Ibn Al-haitham Journal For Pure And Applied Sciences
Effect Annealing Temperatures On The Structural Proerties of ZnO Thin Films Prepared By Chemical Bath Deposition
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In this research, we study the changing structural properties of ZnO with changing annealing temp., in the range  (473-773)K prepared by chemical bath deposition method at temp. (353)K, where deposited on glasses substrates at thickness (500±25)nm, the investigation of (XRD) indicates that the (ZnO) films are polycrystalline type of Hexagonal.

            The results of the measuring of each sample from grain size, microstrain, dislocation density, integral breadth, shape factor and texture coefficient, show that annealing process leads to increase the grain size (26.74-57.96)nm, and decrease microstrain (0.130-0.01478), dislocation density (1.398-0.297)*1015

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Publication Date
Sat Jan 30 2021
Journal Name
Iraqi Journal Of Science
Irradiation Effects on The Sensitivity of ZnO Thin Films Synthesized on Glass Substrate by Sol-gel Method
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This work investigates the structural, optical, and surface properties of ZnO thin films prepared by sol-gel method. The effect on waveguide sensor was examined at different irradiation durations of alpha particles. The X-ray diffraction (XRD) measurements revealed that the crystalline phase of ZnO thin films does not change after irradiation and showed a hexagonal structure of wurtzite type with an orientation toward (002). Moreover, ZnO thin films absorbance was increased with increasing irradiation time, whereas the transmittance was decreased. Additionally, increasing the irradiation time of alpha particles caused an increase in the extinction coefficient and the imaginary part,  while the optical energy gap of the ZnO samples w

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Publication Date
Fri Oct 20 2023
Journal Name
Ibn Al-haitham Journal For Pure And Applied Sciences
Enhancing Gas Sensing Performance of TiO2-ZnO nanostructures: Effect of ZnO Concentration
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Gas sensors based on titanium dioxide (TiO2) and zinc oxide (ZnO) nanocomposites are considered energy-saving devices that are utilized to find dangerous or harmful gases in an environment. The performance of nitrogen dioxide (NO2) gas sensors have been improved by spin-coating a TiO2 and TiO2:ZnO nanocomposite with varying concentrations (90TiO2:10ZnO, 70TiO2:30ZnO, and 50TiO2:50ZnO). To correlate structural properties with gas-sensing behavior, structural and morphological characterization has been done using FESEM, XRD, and EDX.  Without any ZnO-specific crystalline phase, TiO2

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Publication Date
Sun Apr 23 2017
Journal Name
Ibn Al-haitham Journal For Pure And Applied Sciences
The Study Of Thickness And Annealing Temperature Effect On Structural and Optical Properties For ZnO Thin Films
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  In the present work, We study the structural and optical properties of (ZnO), which are prepared by thermal evaporation technique, where deposit (Zn) on glass substrates at different thicknesses (150,250,350)nm, deposited on glass substrate at R.T. with rate (5 nm sec-1). And then we make oxidation for (Zn) films at temperature (500) and using the air for one hour, and last annealing samples at temperature (400,500) for one hour. The investigation of (XRD) indicates that the (ZnO) films are polycrystalline type of hexagonal with a preferred orientation along (002) to all samples and analysis reveals that the intensity of this orientation increases with the increase of the thickness and annealing temperature.   &nbsp

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