In this research constructed N2 laser system by use developed method of electric discharge. In this method used four step of electric discharge by using four capacitors, three spark gaps, high tension power supply varying in range from 12kV to 24 kV and three resistors, this method called three stage blumlein circuit. The breakdown time delay of these parallel spark gaps cement strong ultraviolet preionization in the laser channel, thus the result of these amendments the laser output is many doubled and is more increasing than that obtained using the one and two stage blumlein circuits. This system has been designed and operated to give pulse laser with wavelength at 337.1 nm. This laser system can operate without mirrors and optical resonator. The best result of energy was about (20.2 mJ) at electrode separation (3.5 mm) with flow rate (13 L/min) and applied voltage (24 kV). With this conditions of electric discharges the pulse duration was (6.65 ns) then the peak power was (3.04 MW), the efficiency of convert the electric energy to optical energy was (0. 93%) and The divergence of laser beam at optimal condition was (0.348 mrad). The results of fabricated system indicate the output characteristics can be significantly improved by improving the discharge characteristics.
The current study performs an explicit nonlinear finite element simulation to predict temperature distribution and consequent stresses during the friction stir welding (FSW) of AA 7075-T651 alloy. The ABAQUS® finite element software was used to model and analyze the process steps that involve plunging, dwelling, and traverse stages. Techniques such as Arbitrary Lagrangian–Eulerian (ALE) formulation, adaptive meshing, and computational feature of mass scaling were utilized to simulate sequence events during the friction stir welding process. The contact between the welding tool and workpiece was modelled through applying Coulomb’s friction model with a nonlinear friction coefficient value. Also, the model considered the effect o
... Show MoreArabian killifish,
In this study, the staging of normal embryonic development of
Aromaticity reversals between the electronic ground (S0) and low-lying singlet (S1, S2) and triplet (T1, T2, T3) states of naphthalene and anthracene are investigated by calculating the respective off-nucleus isotropic magnetic shielding distributions using complete-active-space self-consistent field (CASSCF) wavefunctions involving gauge-including atomic orbitals (GIAOs). The shielding distributions around the aromatic S0, antiaromatic S1 (1Lb), and aromatic S2 (1La) states in naphthalene are found to resemble the outcomes of fusing together the respective S0, S1, and S2 shielding distributions of two benzene rings. In anthracene, 1La is lower in energy than 1Lb, and as a result, the S1 state becomes aromatic, and the S2 state becomes anti
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In this work, the surface of the telescope’s mirror is cleaned using an atmospheric-pressure radio frequency plasma jet (APRFPJ), which is generated by Argon gas between two coaxial metal electrodes. The RF power supply is set to 2 MHz frequencies with three different power levels: 20, 50, and 80 W. Carbon, that has adhered to the surface, can be effectively removed using the plasma cleaning technique, which also modifies any residual bonds. The cleaned surface was clearly distinguished using an optical emission spectroscopy (OES) technique and a water contact angle (WCA) analyzer for the activation property on their surfaces. The sample showed a super hydrophilic surface at an angle of 1° after 2.5 minutes of plasma tre
... Show MoreThe present work was done in an attempt to build systematic procedures for treating warts by 810 nm diode laser regarding dose parameters, application parameters and laser safety. The study was done in Al- Kindy Teaching Hospital in Baghdad, Iraq during the period from 1st October 2003 till 1st April 2004. Fifteen patients completed the treatment and they were followed for the period of 3 months. Recalcitrant and extensive warts were selected for the study. Patients were randomly divided into 3 groups to be treated by different laser powers 9, 12 and 15 W, power density of 286 W/cm2, 381W/cm2, 477 W/cm2 pulse duration of 0.2 s, interval of 0.2 s and repeated pulses were used. The mode of application was either circular or radial. Pain oc
... Show MoreThe printed circuit heat exchanger is a plate type heat exchanger with a high performance and compact size. Heat exchangers such as this need a unique form of bonding and other techniques to be used in their construction. In this study, the process of joining plates, diffusion bonding, was performed and studied. A special furnace was manufactured for bonding purposes. The bonding process of copper metal was carried out under specific conditions of a high temperature up to 700 oC, high pressure of 3.45 MPa, and in an inert environment (Argon gas) to make tensile samples. The tensile samples are cylindrical shapes containing groves representing the flow channels in the printed circuit heat exchanger and checking their tensile st
... Show MoreThe present work includes a design and characteristics study of a controlling the wavelength of high power diode laser by thermoelectric cooler [TEC] . The work includes the operation of the [TEC] to control the temperature of the diode laser between ( 0- +30) °C by changing the resistance of thermistor. We can control a limited temperature of a diode laser by changing the phase cooling between hot and cold faces of the diode, this process can be attempted by comparator type [LM –311] .The theoretical results give a model for controlling the temperature with, the suitable wavelength.
The electrical properties of pure NiO and NiO:Au Films which are
deposited on glass substrate with various dopant concentrations
(1wt.%, 2wt%, 3wt.% and 4wt.%) at room temperature 450 Co
annealing temperature will be presented. The results of the hall effect
showed that all the films were p-type. The Hall mobility decreases
while both carrier concentration and conductivity increases with the
increasing of annealing temperatures and doping percentage, Thus,
indicating the behavior of semiconductor, and also the D.C
conductivity from which the activation energy decrease with the
doping concentration increase and transport mechanism of the charge
carriers can be estimated.