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Effect of iodine doping on the characteristics of polythiophene thin films prepared by aerosol assisted plasma jet polymerization at atmospheric pressure
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Iodine-doped polythiophene thin films are prepared by aerosol assisted plasma jet polymerization at atmospheric pressure and room temperature. The doping of iodine was carried out in situ by employing iodine crystals in thiophene monomer by weight mixing ratios of 1%, 3%, 5% and 7%. The chemical composition analyses of pure and iodine-doped and heat-treated polythiophene thin films are carried out by FTIR spectroscopy studies. The optical band gaps of the films are evaluated from absorption spectrum studies. Direct transition energy gaps are determined from Tauc plots. The structural changes of polythiophene upon doping and the reduction of optical band gap are explained on the basis of the results obtained from FTIR spectroscopy, UV–VIS absorption studies, X-ray diffraction and atomic force microscope (AFM) analysis. The energy band gap will be different according to the concentration of polythiophene iodine. It can be concluded that iodine-doped polythiophene thin films can be prepare by aerosol assisted plasma jet polymerization and control the optical energy band gap regulars by controlling the thiophene -iodine weight mixing ratios.

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Publication Date
Sun Dec 01 2013
Journal Name
Baghdad Science Journal
Study the Effect of Solar Radiation Pressure at Several Satellite Orbits
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The effects of solar radiation pressure at several satellite (near Earth orbit satellite, low Earth orbit satellite, medium Earth orbit satellite and high Earth orbit satellite ) have been investigated. Computer simulation of the equation of motion with perturbations using step-by-step integration (Cowell's method) designed by matlab a 7.4 where using Jacobian matrix method to increase the accuracy of result.

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Publication Date
Sun Mar 01 2009
Journal Name
Baghdad Science Journal
The structure and optical properties of CdSe:Cu Thin Films
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A polycrystalline CdSe thin films doped with (5wt%) of Cu was fabricated using vacuum evaporation technique in the substrate temperature range(Ts=RT-250)oC on glass substrates of the thickness(0.8?m). The structure of these films are determined by X-ray diffraction (XRD). The X-ray diffraction studies shows that the structure is polycrystalline with hexagonal structure, and there are strong peaks at the direction (200) at (Ts=RT-150) oC, while at higher substrate temperature(Ts=150-250) oC the structure is single crystal. The optical properties as a function of Ts were studied. The absorption, transmission, and reflection has been studied, The optical energy gap (Eg)increases with increase of substrate temperature from (1.65

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Publication Date
Fri Jan 01 2016
Journal Name
World Scientific News
Effect of annealing temperature on the structural and optical properties of CdSe: 1% Ag thin films
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Publication Date
Sun Feb 26 2012
Journal Name
Ibn Al-haitham Journal For Pure And Applied Science
Study the Effect of Annealing Temperature on the Structural, Optical and Electrical Properties of ZnS Thin Films
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The structural, optical and electrical properties of ZnS films prepared by vacuum evaporation technique on glass substrate at room temperature and treated at different annealing temperatures (323, 373, 423)K of thickness (0.5)µm have been studied. The structure of these films is determined by X-ray diffraction (XRD). The X-ray diffraction studies show that the structure is polycrystalline with cubic structure, and there are strong peaks at the direction (111). The optical properties investigated which include the absorbance and transmittance spectra, energy band gab, absorption coefficient, and other optical constants. The results showed that films have direct optical transition. The optical band gab was found to be in the range t

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Publication Date
Sun Feb 03 2019
Journal Name
Iraqi Journal Of Physics
Effect of indium content on X- ray diffraction and optical constants of InxSe1-x thin films
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Alloys of InxSe1-x were prepared by quenching technique with
different In content (x=10, 20, 30, and 40). Thin films of these alloys
were prepared using thermal evaporation technique under vacuum of
10-5 mbar on glass, at room temperature R.T with different
thicknesses (t=300, 500 and 700 nm). The X–ray diffraction
measurement for bulk InxSe1-x showed that all alloys have
polycrystalline structures and the peaks for x=10 identical with Se,
while for x=20, 30 and 40 were identical with the Se and InSe
standard peaks. The diffraction patterns of InxSe1-x thin film show
that with low In content (x=10, and 20) samples have semi
crystalline structure, The increase of indium content to x=30
decreases degree o

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Publication Date
Thu Nov 19 2020
Journal Name
Iop Conference Series: Materials Science And Engineering
Nickel Oxide Thin Films Grooved by Laser Processing
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Publication Date
Wed Jan 01 2014
Journal Name
Journal Of The College Of Basic Education
Effect of annealing temperature on Structural and Optical properties of amorphous Selenium thin films
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Publication Date
Sun Mar 01 2020
Journal Name
Iop Conference Series: Materials Science And Engineering
The Influence of x ratio and Annealing Temperatures on Structural and Optical Properties for (CuO)<sub>x</sub>(ZnO)<sub>1-x</sub> Composite Thin Films Prepared by PLD
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Abstract<p>Thin films of (CuO)<sub>x</sub>(ZnO)<sub>1-x</sub> composite were prepared by pulsed laser deposition technique and x ratio of 0≤ x ≤ 0.8 on clean corning glass substrate at room temperatures (RT) and annealed at 373 and 473K. The X-ray diffraction (XRD) analysis indicated that all prepared films have polycrystalline nature and the phase change from ZnO hexagonal wurtzite to CuO monoclinic structure with increasing x ratio. The deposited films were optically characterized by UV-VIS spectroscopy. The optical measurements showed that (CuO)<sub>x</sub>(ZnO)<sub>1-x</sub> films have direct energy gap. The energy band gaps of prepared thin films </p> ... Show More
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Publication Date
Sun Sep 05 2010
Journal Name
Baghdad Science Journal
Studying the effect of annealing on some electrical and optical properties for thin CdS , CdS:In films
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In the present work we prepared heterojunction not homogenous CdS/:In/Cu2S) by spray and displacement methods on glass substrate , CdS:In films prepared by different impurities constration. Cu2S prepared by chemical displacement method to improve the junction properties , structural and optical properties of the deposited films was achieved . The study shows that the film polycrystalline by XRD result for all film and the energy gap was direct to 2.38 eV with no effect on this value by impurities at this constration .

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Publication Date
Tue Jan 17 2012
Journal Name
Journal Of Electron Devices
INVESTIGATION OF OPTICAL PROPERTIES OF THE PbS/CdS THIN FILMS BY THERMAL EVAPORATION
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In this work, we have investigated optical properties of the thermally evaporation PbS/CdS thin films. The optical constant such as (refractive index n, dielectric constant εi,r and Extinction coefficient κ) of the deposition films were obtained from the analysis of the experimental recorded transmittance spectral data. The optical band gap of PbS/CdS films is calculate from (αhυ)1/2 vs. photon energy curve.