The Manganese (Mn) thin films of obliquely and normal deposited were prepared by using thermal evaporation method at pressure 10-5 torr on glass substrate at room temperature. The optical properties of normal and obliquely deposited films are studied and also the effect of deposition angle on these properties. The deposition angle has great influence on the increase of the absorbance, absorption coefficient, extinction coefficient and imaginary dielectric constant and the decrease of the transmittance, reflectance, refractive index and real dielectric constant.
 

The aim of this paper is to introduce the definition of a general fuzzy norned space as a generalization of the notion fuzzy normed space after that some illustrative examples are given then basic properties of this space are investigated and proved.

For example when V and U are two general fuzzy normed spaces then the operator  is a general fuzzy continuous at u  V if and only if u in V implies S(u) in U.

    In this paper , we study some approximation  properties of the strong difference and study the relation between the strong difference and the weighted modulus of continuity

     Our goal in the present paper is to introduce a new type of fuzzy inner product space. After that, to illustrate this notion, some examples are introduced. Then we prove that that every fuzzy inner product space is a fuzzy normed space. We also prove that the cross product of two fuzzy inner spaces is again a fuzzy inner product space. Next, we prove that the fuzzy inner product is a non decreasing function. Finally, if U is a fuzzy complete fuzzy inner product space and D is a fuzzy closed subspace of U, then we prove that U can be written as a direct sum of D and the fuzzy orthogonal complement    of D.

The conventional solid-state reaction method was utilized to prepare a series of superconducting samples of the nominal composition Bi_2-xPb_0.3W_xSr₂Ca₂Cu₃O_10+d with 0≤x≤0.5 of 50 nm particle size of tungsten sintered at 850⁰C for 140h in air . The influence of substitution with W NPs at bismuth (Bi) sites was characterized by the X-ray diffraction (XRD), scanning electron microscopy (SEM) and dc electrical resistivity. Room temperature X-ray diffraction analysis revealed that there exists two phases, i.e. Bi-(2223) and Bi-(2212), in addition to the impurity phases of (SrCa) _2Cu2O3, Sr₂Ca₂Cu_7<

Single crystals of pure and Cu+2,Fe+2 doped potassium sulfate were grown from aqueous solutions by the slow evaporation technique at room temperature. with dimension of (11x9 x4)mm3 and ( 10x 8x 5)mm3 for crystal doping with Cu &Fe respectively. The influence of doping on crystal growth and its structure revealed a change in their lattice parameters(a=7.479 Ã… ,b=10.079 Ã… ,c=5.772 Ã…)for pure and doping (a=9.687 Ã…, b=14.926 Ã… ,c= 9.125 Ã…) & (a=9.638 Ã… , b= 8.045 Ã… ,c=3.271 Ã…) for Cu & Fe respectively. Structure analysis of the grown crystals were obtained by X-Ray powder diffraction measurements. The diffraction patterns were analyzed by the Rietveld refinement method. Rietveld refinement plo

Thin films of iridium doped indium oxide (In2O3:Eu)with different doping ratio(0,3,5,7,and 9%) are prepared on glass and single crystal silicon wafer substrates using spray pyrolysis method. The goal of this research is to investigate the effect of doping ratio on of the structural, optical and sensing properties . The structure of the prepared thin films was characterized at room temperature using X-ray diffraction. The results showed that all the undoped and doped (In2O3:Eu)samples are polycrystalline in structure and nearly stoichiometric. UV-visible spectrophotometer in the wavelength range (200-1100nm)was used to determine the optical energy gap and optical constants. The optical transmittance of 83% and the optical band gap of 5.2eV

In this study lattice parameters, band structure, and optical characteristics of pure and V-doped ZnO are examined by employing (USP) and (GGA) with the assistance of First-principles calculation (FPC) derived from (DFT). The measurements are performed in the supercell geometry that were optimized. GGA+U, the geometrical structures of all models, are utilized to compute the amount of energy after optimizing all parameters in the models. The volume of the doped system grows as the content of the dopant V is increased. Pure and V-doped ZnO are investigated for band structure and energy bandgaps using the Monkhorst–Pack scheme's k-point sampling techniques in the Brillouin zone (G-A-H-K-G-M-L-H). In the presence of high V content, the ban