The effect of annealing temperature (Ta) on the electrical properties like ,D.C electrical conductivity (σ DC), activation energy (Ea),A.C conductivity σa.c ,real and imaginary (ε1,ε2) of dielectric constants ,relaxation time (τ) has been measured of ZnS thin films (350 nm) in thickness which were prepared at room temperature (R.T) using thermal evaporation under vacuum . The results showed that σD.C increases while the activation energy values(Ea) decreases with increasing of annealing temperature.(Ta) from 303- 423 K .
The density of charge carriers (nH) and Hall mobility (μH) increases also with increasing of annealing temperature Hall effect measurements showed that ZnS films were n-type converted to p-type at high annealin

Through this study, the following has been proven, if  is an algebraically paranormal operator acting on separable Hilbert space, then  satisfies the ( ) property and  is also satisfies the ( ) property for all . These results are also achieved for  ( ) property.    In addition, we prove that for a polaroid operator with finite ascent then after the property ( ) holds for  for all.

The local asphalt concrete fracture properties represented by the fracture energy, J-integral, and stress intensity factor are calculated from the results of the three point bending beam test made for pre notches beams specimens with deformation rate of 1.27 ^mm/min. The results revealed that the stress intensity factor has increased by more than 40% when decreasing the testing temperature 10˚C and increasing the notch depth from 5 to 30^mm. The change of asphalt type and content have a limited effect of less than 6%.

In the present work, lead silicate glasses have been prepared with
different amount of lead oxide content. Structure properties such as
X-ray diffraction, AFM, and FTIR analyses have been done. The
exceeding of PbO content more than 25wt% revealed a decreasing in
density. The X- ray revealed that the strongest peak related to
Hexagonal silica dioxide and the other crystal phases formed were
related to silica oxide (SiO2) and lead oxide (PbO). Growth and
decayed phases in X-ray have been observed with changing lead
oxide content. Homogeneous surface was obtained using AFM
analyzer with an average diameter around 100 nm. Infrared spectrum
is characterized by the presence of large absorption band between
120

The Asphalt cement is produced as a by-product from the oil industry; the asphalt must practice further processing to control the percentage of its different ingredients so that it will be suitable for paving process. The objective of this work is to prepare different types of modified Asphalt cement using locally available additives, and subjecting the prepared modified Asphalt cement to testing procedures usually adopted for Asphalt cement, and compare the test results with the specification requirements for the modified Asphalt cement to fulfill the paving process requirements. An attempt was made to prepare the modified Asphalt cement for pavement construction in the laboratory by digesting each of the two penetration grade Asphalt c

The electronic properties and Hall effect of thin amorphous Si1-xGex:H films of thickness (350 nm) have been studied such as dc conductivity, activation energy, Hall coefficient under magnetic field (0.257 Tesla) for measuring carrier density of electrons and holes and Hall mobility as a function of germanium content (x = 0–1), deposition temperature (303-503) K and dopant concentration for Al and As in the range (0-3.5)%. The composition of the alloys and films were determined by using energy dispersive spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS).
This study showed that dc conductivity of a-Si1-xGex:H thin films is found to increase with increasing Ge content and dopant concentration, whereas conductivity activati

This paper reports on the experimental study, which conducted a series of triaxial tests for the asphalt concrete using hydrated lime as a mineral additive. Three HMA mixes, prepared by the specification for wearing, levelling and base layers, were studied under three different temperatures. The test results have demonstrated that, compared with the control mixes excluding HL, the permanent deformation resistance of the HL modified mixes has significant improvement. The deformation has been reduced at the same load repetition number, meanwhile the flow number has been considerably increased. The degree of improvement in permanent deformation resistance using HL is more pronounced at high stress deviation states and high temperature.

The influence of different thickness (500,750, and 1000) nm on the structure properties electrical conductivity and hall effect measurements have been investigated on the films of copper indium selenide CuInSe2 (CIS) the films were prepared by thermal evaporation technique on glass substrates at RT from compound alloy. The XRD pattern show that the film have poly crystalline structure a, the grain size increasing with as a function the thickness. Electrical conductivity (σ), the activation energies (Ea1,Ea2), hall mobility and the carrier concentration are investigated as function of thickness. All films contain two types of transport mechanisms of free carriers increase films thickness. The electrical conductivity increase with thickness