Alloys of InxSe1-x were prepared by quenching technique with
different In content (x=10, 20, 30, and 40). Thin films of these alloys
were prepared using thermal evaporation technique under vacuum of
10-5 mbar on glass, at room temperature R.T with different
thicknesses (t=300, 500 and 700 nm). The X–ray diffraction
measurement for bulk InxSe1-x showed that all alloys have
polycrystalline structures and the peaks for x=10 identical with Se,
while for x=20, 30 and 40 were identical with the Se and InSe
standard peaks. The diffraction patterns of InxSe1-x thin film show
that with low In content (x=10, and 20) samples have semi
crystalline structure, The increase of indium content to x=30
decreases degree of crystallinity and further increase of indium
content to x=40 leads to convert structure to amorphous. Increase of
thickness from 300 to 700nm increases degree of crystallinity for all
indium content. Transmittance measurements were used to calculate
refractive index n and the extinction coefficient k using Swanepole’s
method. The optical constants such as refractive index (n), extinction
coefficient (k) and dielectric constant (εr, εi) increases for low indium
content samples and decreases for high indium content samples,
while increase of thickness increases optical constants for all x
values. The oscillator energy E0, dispersion energy Ed, and other
parameters have been determined by Wemple - DiDomenico single
oscillator approach.
