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Chaos synchronization delay in semiconductor lasers with optoelectronic feedback

In this work we reported the synchronization delay in
semiconductor laser (SL) networks. The unidirectional
configurations between successive oscillators and the correlation
between them are achieved. The coupling strength is a control
parameter so when we increase coupling strength the dynamic of the
system has been change. In addition the time required to synchronize
network components (delay of synchronization) has been studied as
well. The synchronization delay has been increased by mean of
increasing the number of oscillators. Finally, explanation of the time
required to synchronize oscillators in the network at different
coupling strengths.

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Publication Date
Sat Mar 31 2018
Journal Name
Journal Of Engineering
Estimating Angle of Arrival (AOA) for Wideband Signal by Sensor Delay Line (SDL) and Tapped Delay Line (TDL) Processors

Angle of arrival (AOA) estimation for wideband signal becomes more necessary for modern communication systems like Global System for Mobile (GSM), satellite, military applications and spread spectrum (frequency hopping and direct sequence). Most of the researchers are focusing on how to cancel the effects of signal bandwidth on AOA estimation performance by using a transversal filter (tap delay line) (TDL). Most of the researchers were using two elements array antenna to study these effects. In this research, a general case of proposed (M) array elements is used. A transversal filter (TDL) in phase adaptive array antenna system is used to calculate the optimum number of taps required to compensate these effect. The propo

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Publication Date
Sun Aug 01 2021
Journal Name
International Journal Of Mechanical Engineering And Robotics Research
Adaptive Approximation-Based Feedback Linearization Control for a Nonlinear Smart Thin Plate

This paper proposes feedback linearization control (FBLC) based on function approximation technique (FAT) to regulate the vibrational motion of a smart thin plate considering the effect of axial stretching. The FBLC includes designing a nonlinear control law for the stabilization of the target dynamic system while the closedloop dynamics are linear with ensured stability. The objective of the FAT is to estimate the cubic nonlinear restoring force vector using the linear parameterization of weighting and orthogonal basis function matrices. Orthogonal Chebyshev polynomials are used as strong approximators for adaptive schemes. The proposed control architecture is applied to a thin plate with a large deflection that stimulates the axial loadin

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Publication Date
Wed Jun 26 2019
Journal Name
Iraqi Journal Of Science
Quantum Key Distribution and Chaos Bandwidth Effects on Impact Security of Quantum Communications

The influence of bias current on the bandwidth of chaotic signals in semiconductor lasers by optical feedback has been studied experimentally and numerically. The measured data reveal that the bandwidth increase when the system becomes chaotic and this chaotic signal has a broadband spectrum so it can be used as a carrier for the quantum key. Mixing chaotic signal and quantum key make a very small change in chaotic bandwidth that does not affect the security of data transmitted.

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Publication Date
Wed Aug 31 2022
Journal Name
Iraqi Journal Of Science
Generating Streams of Random Key Based on Image Chaos and Genetic Algorithm

    Today the Genetic Algorithm (GA) tops all the standard algorithms in solving complex nonlinear equations based on the laws of nature. However, permute convergence is considered one of the most significant drawbacks of GA, which is known as increasing the number of iterations needed to achieve a global optimum. To address this shortcoming, this paper proposes a new GA based on chaotic systems. In GA processes, we use the logistic map and the Linear Feedback Shift Register (LFSR) to generate chaotic values to use instead of each step requiring random values. The Chaos Genetic Algorithm (CGA) avoids local convergence more frequently than the traditional GA due to its diversity. The concept is using chaotic sequences with LFSR to gene

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Publication Date
Tue Sep 01 2020
Journal Name
Journal Of Ovonic Research
Publication Date
Tue Jan 01 2019
Journal Name
Energy Procedia
Fabrication and characterization of n-InSb Heterojunction for optoelectronic device

The operating characteristics of optoelectronic devices depend critically on the properties physical of the constituent materials, interesting compound has been focused on this research formed from group III and V of the periodic table. Thin film n-InSb heterjuntion were successfully fabricated on p-Si substrates by thermal evaporation technique at different annealing temperature (as prepared, 400,500,600) °C. The effect of annealing temperature on the structural, surface morphology, optical and optoelectronic properties of InSb films were investigated and studied. The crystal structure of the film was characterized by X-ray diffraction and techniques. AFM techniques inspect the surface morphology of InSb films, the study presented the val

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Publication Date
Tue Jan 01 2019
Journal Name
Energy Procedia
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Publication Date
Tue Sep 01 2020
Journal Name
Journal Of Ovonic Research
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Publication Date
Tue Oct 30 2018
Journal Name
Iraqi Journal Of Physics
N3, N749 dyes effect on the TiO2 for optoelectronic applications

The present work aimed to study effect of (N749 & N3) dyes on TiO2 optical and electrical properties for optoelectronic application. The TiO2 paste prepared by using a doctor blade method. The samples were UV-VIS specterophometricall analyzes of TiO2 before and after immersed in dyes (N749 & N3). The results showed absorption spectra shift toward the visible region due to the adsorption of dye molecules on the surface of oxide nanoparticles. It is seen that the Eg determined to give a value of 3.3eV for TiO2 before immersing in dyes, and immersing in dyes (N749 & N3) are (1.4 &1.6 eV) respectively. The structural properties (XRD), (FTIR) and (SEM) for the sample prepared were investigated and (J-V) characteristics was stu

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Publication Date
Tue Oct 25 2022
Journal Name
Chalcogenide Letters
Study the properties of Cu2Se thin films for optoelectronic applications

Copper selenide (Cu2Se) thin films were prepared by thermal evaporation at RT with thickness 500 nm. The heat-treating for (400 &500) K for the absorber layer has been investigated. This research includes, studying the structural properties of X-ray diffraction (XRD) that show the Cu2Se thin film (Cubic) and has a polycrystalline orientation prevalent (220). Moreover, studying the effect of annealing on their surface morphology properties by using Atomic Force Microscopy AFM. Optical properties were considered using the transmittance and absorbance spectra had been recorded when wavelength range (400 - 1000) nm in order to study the absorption coefficient and energy gap. It was found that these films had allowed direct transitio

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