Preferred Language
Articles
/
ijp-1083
Investigate Indian Costus Plasma Parameters using Q-Switched Laser Nd: YAG
...Show More Authors

The Indian costus plasma properties are investigated including electron temperature (Te), "electron density (ne)", "plasma frequency (fp)", " Debye sphere length", and amount of Debye(Nd),  using the spectrum of optical emission technique. There are several energies used, with ranging from 300 to 600 mJ. The Boltzmann Plot is used to calculate the temperature; where as Stark's Line Broadening is used to calculate the electron density. The Indian costus was spectroscopically examined in the air with the laser  at 10 cm away from the target and the optical fiber  at 0.5 cm away. The results were obtained for an electron temperature range of (1.8-2.2) electron volts (ev) and a wavelength range of (300-600) nm. The XRF analysis reveals that the Indian costus contains a variety of minerals, each with a different percentage, which explains why the optical emission spectrum has so many peaks. When the laser energy is  (between 300 and 600 mJ) the  "optical emission spectroscopy (OES) "has been  used to analyze the plasma spectrum of the Indian costus in the air. The results shows that as the laser energy grew, the amount of Debye will be greater i-e (Nd) >>>1,  which is one of the plasma properties.

Crossref
View Publication Preview PDF
Quick Preview PDF
Publication Date
Sun Mar 06 2011
Journal Name
Baghdad Science Journal
Optical Characteristics of CdSSe Films Prepared by Thermal Evaporation Technique
...Show More Authors

Thin films of cadmium sulphoselenide (CdSSe) have been prepared by a thermal evaporation method on glass substrate, and with pressure of 4x10-5 mbar. The optical constants such as (refractive index n, dielectric constant ?i,r and Extinction coefficient ?) of the deposition films were obtained from the analysis of the experimental recorded transmittance spectral data. The optical band gap of (CdSSe) films is calculate from (?h?)2 vs. photon energy curve. CdSSe films have a direct energy gap, and the values of the energy gap were found to increase when increasing annealing temperature. The band gap of the films varies from 1.68 – 2.39 eV.

View Publication Preview PDF
Crossref
Publication Date
Tue Jun 01 2021
Journal Name
Iraqi Journal Of Physics
Structural and optical properties of TiO2:NiO nanoparticles thin films prepare by chemical spray pyrolysis
...Show More Authors

The properties of structural and optical of pure and doped nano titanium dioxide (TiO2) films, prepared using chemical spray pyrolysis (CPS) technique, with different nanosize nickel oxide (NiO) concentrations in the range (3-9)wt% have been studied. X-Ray diffraction (XRD) technique where using to analysis the structure properties of the prepared thin films. The results revealed that the structure properties of TiO2 have polycrystalline structure with anatase phase. The parameters, energy gap, extinction coefficient, refractive index, real and imaginary parts were studied using absorbance and transmittance measurements from a computerized ultraviolet visible spectrophotometer (Shimadzu UV-1601 PC) in the wavelength

... Show More
View Publication Preview PDF
Crossref
Publication Date
Thu Apr 28 2022
Journal Name
Iraqi Journal Of Science
Dielectric and optical behaviors for pure potassium sulfate and doped with copper and iron
...Show More Authors

Dielectric measurements were carried on pure and doping potassium sulfate with copper and iron ions samples at 1wt.% and 3wt.% for both of copper and iron. The dielectric constant (ε') decreases exponentially from 2.8 to 1.5 as frequency increase for both dopant which is attributed to the space charge and structural distortion. The dielectric loss (ε") for Cu dopant decrease gradually with frequency. The same behavior for 1%Fe dopant while its 3%Fe doping started from 0.27 then decrease exponential. Band gaps for all samples almost constant around 6 eV.

View Publication Preview PDF
Publication Date
Tue Dec 01 2020
Journal Name
Iraqi Journal Of Physics
Optical and Electrical Properties of Glass/Graphene Oxide Thin Films
...Show More Authors

The study effect Graphene on optical and electrical properties of glass prepared on glass substrates using sol–gel dip-coating technique. The deposited film of about (60-100±5%) nm thick. Optical and electrical properties of the films were studied under different preparation conditions, such as graphene concentration of 2, 4, 6 and 8 wt%. The results show that the optical band gap for glass-graphene films decreasing after adding the graphene. Calculated optical constants, such as transmittance, extinction coefficient are changing after adding graphene. The structural morphology and composition of elements for the samples have been demonstrated using SEM and EDX. The electrical properties of films include DC electrical conductivity; we

... Show More
View Publication Preview PDF
Crossref (3)
Crossref
Publication Date
Fri Mar 31 2023
Journal Name
2nd International Conference On Mathematical Techniques And Applications: Icmta2021
Annealing effect on structural and optical properties of Sb2S3 thin film
...Show More Authors

The effect of annealing on the structural and optical properties of Antimony trisulfide (Sb2S3) is investigated. Sb2S3 powder is vaporized on clean glass substrates at room temperature under high vacuum pressure to form thin films. The structural research was done with the aid of X-ray diffraction (XRD) and atomic force microscopy (AFM). The amorphous to the polycrystalline transformation of these thin films was shown by X-ray diffraction analysis after thermal annealing. These films' morphology is explained. The absorption coefficient and optical energy gap of the investigated films are calculated using transmission spectra. Both samples have strong absorption in the visible spectrum, according to UV-visible absorption spectra. The optical

... Show More
View Publication Preview PDF
Scopus (3)
Crossref (1)
Scopus Crossref
Publication Date
Tue Jul 01 2014
Journal Name
Journal Of Nanotechnology & Advanced Materials
Structural and optical properties of SnS thin films
...Show More Authors

Thin films of tin sulfide (SnS) were prepared by thermal evaporation technique on glass substrates, with thickness in the range of 100, 200 and 300nm and their physical properties were studied with appropriate techniques. The phase of the synthesized thin films was confirmed by X-ray diffraction analysis. Further, the crystallite size was calculated by Scherer formula and found to increase from 58 to 79 nm with increase of thickness. The obtained results were discussed in view of testing the suitability of SnS film as an absorber for the fabrication of low-cost and non toxic solar cell. For thickness, t=300nm, the films showed orthorhombic OR phase with a strong (111) preferred orientation. The films deposited with thickness < 200nm deviate

... Show More
Publication Date
Fri Mar 01 2019
Journal Name
Iraqi Journal Of Physics
Wear rate of epoxy resin reinforced with multi walls carbon nanotubes
...Show More Authors

In this study, nanocomposites have been prepared by adding
multiwall carbon nanotubes (MWCNTs) with weight ratios (0, 2, 3,
4, 5) wt% to epoxy resin. The samples were prepared by hand lay-up
method. Influence of an applied load before and after immersion in
sodium hydroxide (NaOH) of normality (0.3N) for (15 days) at
laboratory temperature on wear rate of Ep/MWCNTs
nanocomposites was studied. The results showed that wear rate
increases with increasing the applied load for the as prepared and
immersed samples and after immersion. It was also found that epoxy
resin reinforced with MWCNTs has wear rate less than neat epoxy.
The sample (Ep + 5wt% of MWCNTs) has lower wear rate. The
immersion effect in base so

... Show More
View Publication Preview PDF
Crossref
Publication Date
Tue Feb 12 2019
Journal Name
Iraqi Journal Of Physics
Structural, electrical and optical properties of CdS thin films and the effect of annealing on photoconductivity
...Show More Authors

Cadmium sulfide (CdS) thin films with n-type semiconductor characteristics were prepared by flash evaporating method on glass substrates. Some films were annealed at 250 oC for 1hr in air. The thicknesses of the films was estimated to be 0.5µ by the spectrometer measurement. Structural, morphological, electrical, optical and photoconductivity properties of CdS films have been investigated by X-ray diffraction, AFM, the Hall effect, optical transmittance spectra and photoconductivity analysis, respectively. X-ray diffraction (XRD) pattern shows that CdS films are in the stable hexagonal crystalline structure. Using Debye Scherrerś formula, the average grain size for the samples was found to be 26 nm. The transmittance of the

... Show More
View Publication Preview PDF
Crossref
Publication Date
Sat Oct 01 2011
Journal Name
Iraqi Journal Of Physics
The Role of Annealing Temperature on the Optical Properties of Thermally Deposited CdTe Films
...Show More Authors

A polycrystalline CdTe film has been prepared by thermal evaporation technique on glass substrate at substrate temperature 423 K with 1.0 m thicknesses. The film was heated at various annealing temperature under vacuum (Ta =473, 523 and K). Some of physical properties of prepared films such as structural and optical properties were investigated. The patterns of X-ray diffraction analysis showed that the structure of CdTe powder and all films were polycrystalline and consist of a mixture of cubic and hexagonal phases and preferred orientation at (111) direction.
The optical measurements showed that un annealed and annealed CdTe films had direct energy gap (Eg). The Eg increased with increasing Ta. The refractive index and the real p

... Show More
View Publication Preview PDF
Publication Date
Thu Mar 16 2017
Journal Name
Ibn Al-haitham Journal For Pure And Applied Sciences
Effect of Annealing Temperature and Thickness on the Structural and Optical Properties of CdSeThin Films
...Show More Authors

CdSe alloy has been prepared successfully from its high purity elements. Thin films of this alloy with different thicknesses (300,700)nm have been grown on glass substrates at room temperature under very low pressure (10-5)Torr with rate of deposition (1.7)nm/sec by thermal evaporation technique, after that these thin films have been heat treated under low pressure (10-2)Torr at (473,673)K for one hour. X-ray patterns showed that both CdSe alloy and thin films are polycrystalline and have the hexagonal structure with preferential orientation in the [100] and [002] direction respectively. The optical measurements indicated that CdSe thin films have allowed direct optical energy band gap, and it increases from (1.771.84) eV and from (1.6-1

... Show More
View Publication Preview PDF