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CO2 Laser Treatment of Cervical Ectropion
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Cervical ectropion is considered to be a physiologic condition caused by columnar epithelium migration from the cervical canal into the vaginal portion of the cervix and usually there is no treatement for clinically asymptomatic cervical ectropion . Treatment can be achieved by thermal cauterization (Electrocautery), Cryosurgery or laser vaporization. Aim of the study: To study the effectiveness of CO2 laser (10600nm) in treatment of symptomatic cervical ectropion . Setting: The study was carried out at Laser Medicine Research Clinic at the Institute of Laser for Postgraduate Studies, University of Baghdad between the first of August 2013 to the end of October 2013. Patients and Methods: Ten female Patients with age range between 25-48 years old were collected from Department of Health (Pap smear unit) at Al-Ilwiya Maternity Hospital. Patients who were diagnosed clinically as having cervical ectropion were subjected to Pap smear in order to exclude an underlying dysplasia. The patients were subjected to CO2 laser vaporization in a continuous mode. Results: All patients were subjected to continuous wave laser and the range of power was from 5 up to 10 W. The exposure time ranged from 1-2 minutes according to size of the ectrpion and patient`s cooperation. There was no bleeding nor pain intraoperatively. No bleeding post operatively and all with rapid return to the normal activity . Only patients with Pap smear findings of trichomoniasis or monilia received the appropriate antibiotic treatment before laser ablation. Most patients didn`t require analgesics nor anesthesia and no need for antibiotics postoperatively. Conclusion: CO2 laser vaporization with a power range of 5-10 W (mean power 7.9 W) and exposure time ranged from 1-2 minutes appears to be quite effective for treatment of cervical ectropion .By laser we can go more precise in the tissue and we can reach squamocolumnar junction and destroy the deepest glands and so the whole region can be treated. There is good and rapid healing, insignificant bleeding and pain postoperatively.

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Publication Date
Fri Dec 26 2025
Journal Name
Journal Of Baghdad College Of Dentistry
Irradiation effect of 780-805nm diode laser on wound healing in mice
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Background: Wound healing is a complicated, interactive, integrative process involving cellular and chemotactic activity, the release of chemical mediators and associated vascular response which includes number of phases: inflammatory phase, proliferative phase and remodeling phase. Low level laser therapy can be more effective in the three overlapping phases of wound healing. Biostimulation appears to have an effect on the cellular level, by increasing cellular function and stimulating various cells. The aim of present study was to evaluate histologically the effect of 780-805 diode laser the intensity of inflammation and pattern of epithelization in mice model. Material and methods: The experimental study was performed on ninety six white

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Publication Date
Tue Jun 11 2002
Journal Name
Iraqi Journal Of Laser
Investigating the Effects of Carbon Dioxide Laser Fluence on Oral Soft Tissue
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This study investigates the surgical and thermal effects on oral soft tissues produced by CO2 laser emitting at 10.6 micrometers with three different fluences 490.79, 1226.99 and 1840.4 J/cm2. These effects are specifically; incision depth, incision width and the tissue damage width and depth. The results showed that increasing the fluence and /or the number of beam passes increase the average depths of ablation. Moreover, increasing the fluence and the number of beam passes increase the adjacent tissue damage in width and depth. Surgeons using CO2 laser should avoid multiple pulses of the laser beam over the same area, to avoid unintentional tissue damage.

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Publication Date
Sat Jan 05 2019
Journal Name
Iraqi Journal Of Physics
Study of optical bistability in a fully optimized laser Fabry-Perot system
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The analytical study of optical bistability is concerned in a fully
optimized laser Fabry-Perot system. The related phenomena of
switching dynamics and optimization procedure are also included.
From the steady state of optical bistability equation can plot the
incident intensity versus the round trip phase shift (φ) for different
values of dark mistuning 

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12
,
6
,
3
,
1.5
0 , o
   
 or finesse (F= 1, 5, 20,
100). In order to obtain different optical bistable loops. The inputoutput
characteristic for a nonlinear Fabry-Perot etalon of a different
values of finesse (F) and using different initial detuning (φ0) are used
in this rese

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Publication Date
Wed Jun 11 2003
Journal Name
Iraqi Journal Of Laser
Modeling of Plasma Affected Thermal Profile in Solids During Laser Materials Processing
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A new scheme of plasma-mediated thermal coupling has been implemented which yields the temporal distributions of the thermal flux which reaches the metal surface, from which the spatial and temporal temperature profiles can be calculated. The model has shown that the temperature of evaporating surface is determined by the balance between the absorbed power and the rate of energy loss due to evaporation. When the laser power intensity range is 107 to108 W/cm2 the temperature of vapor could increase beyond the critical temperature of plasma ignition, i.e. plasma will be ignited above the metal surface. The plasma density has been analyzed at different values of vapor temperature and pressure using Boltzmann’s code for calculation of elec

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Publication Date
Mon Dec 11 2006
Journal Name
Iraqi Journal Of Laser
The Inhibition of Streptococcus mutans by He- Ne Laser via TBO Photosensitizer
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This work aims to investigate the inhibition of vitality of Streptococcus mutans, which is the causative agent of caries. A 632.8 nm He-Ne laser with the output power of 4.5mW was used in combination with toluidine blue O (TBO) at the concentration of 50μg/ml as a photosensitizer. Streptococcus mutans was isolated from 35 patients if carious teeth. Three isolates were chosen and exposed to different energy densities of He – Ne laser light 3.8, 11.7, 34.5 and 104.1 J/cm². After irradiation, substantial reduction was observed in the number of colony forming units (CFU)/ ml. The reduction in the number of CFU was increasing as the dose increased.

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Publication Date
Fri Jan 01 2021
Journal Name
Materials Today:proceeding
Modification of CR39 surfaces by 193 nm ArF laser for biomaterial sensing
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Publication Date
Fri Feb 01 2019
Journal Name
Journal Of Physics: Conference Series
Spectroscopic and structural properties of Zinc-Phthalocyanine prepared by pulsed laser deposition
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Publication Date
Thu Nov 29 2018
Journal Name
Journal Of Electronic Materials
Numerical Modeling of 193-nm Excimer Laser Ablation on CR-39 Polymer
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Publication Date
Wed Dec 01 2021
Journal Name
Baghdad Science Journal
Enhancement of Electron Temperature under Dense Homogenous Plasma by Pulsed Laser Beam
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The applications of hot plasma are many and numerous applications require high values of the temperature of the electrons within the plasma region. Improving electron temperature values is one of the important processes for using this specification in plasma for being adopted in several modern applications such as nuclear fusion, plating operations and in industrial applications. In this work, theoretical computations were performed to enhance electron temperature under dense homogeneous plasma. The effect of   power and duration time of pulsed Nd:YAG laser   was studied on the heating of   plasmas  by inverse bremsstrahlung  for  several values for the electron density ratio. There results for these ca

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Publication Date
Tue Oct 08 2002
Journal Name
Iraqi Journal Of Laser
Spatial Response Uniformity of Silicon–Based CdS and PbS Heterojunction Laser Detectors
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This paper demonstrates the spatial response uniformity (SRU) of two types of heterojunctions (CdS, PbS /Si) laser detectors. The spatial response nonuniformity of these heterojunctions is not significant and it is negligible in comparison with p+- n silicon photodiode. Experimental results show that the uniformity of CdS /Si is better than that of PbS /Si heterojunction

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