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PDF Tunable Optical filters Using Etched Polarization Maintaining Fiber Hybrid Sagnac Interferometer
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: In modern optical communication system, noise rejection multiple access interference (MAI) must be rejected in dense access network (DAN). This paper will study the dual optical band pass and notch filters. They will be extracted with tunable FWHM using 10cm (PMF) with different cladding diameters formed with etching 125μm PMF after immersing it with 40% of hydrofluoric acid (HF). This fiber acts as assessing fiber to perform Sagnac interferometer with splicing regions that placed 12cm (SMF) for performing hybrid Sagnac interferometer that consists of Mach-Zehnder instead of Sagnac loop which is illuminated by using laser source with centroid wavelength of 1546.7nm and FWHM of 286 pm or 9 ns in the time domain. . Firstly, Three PMF with the same lengths but with different etching durations (10, 20 and 30) min. Secondly, each of these PMFs with different etching durations will affected under tunable stressing forces (10, 20, 50 and100) g applying on cross sectional area and two weights of (5, 10, 25 and 50) g putting on both micro splicing area separately. The minimum FWHM of dual optical band pass and notch filters at specific etching time with mechanical forces getting the best values equal to 123pm and 90pm, respectively. The study found that the HSI interferometer can be used efficiently as a narrow notch filter in integrated optical communication systems since it has high sensitivity in the pm range.

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Publication Date
Thu Oct 01 2009
Journal Name
Iraqi Journal Of Physics
The Structural and Optical Properties of Hydrogenated and Nitrogenated a-Si0.1Ge0.9 and a-Si0.1Ge0.9:3% B Thin Films
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It is shown that pure and 3% boron doped a-Si0.1Ge0.9:H and a-Si0.1Ge0.9:N thin films
could be prepared by flash evaporation processes. The hydrogenation and nitrogenation
are very successful in situ after depositing the films. The FT-IR analysis gave all the
known absorbing bonds of hydrogen and nitrogen with Si and Ge.
Our data showed a considerable effect of annealing temperature on the structural and
optical properties of the prepared films. The optical energy gap (Eopt.) of a-Si0.1Ge0.9
samples showed to have significant increase with annealing temperature (Ta) also the
refractive index and the real part of dielectric constant increases with Ta, however the
extinction coefficient and imaginary part of dielect

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Publication Date
Wed Jun 01 2022
Journal Name
Baghdad Science Journal
Preparation and study of the Structural, Morphological and Optical properties of pure Tin Oxide Nanoparticle doped with Cu
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            In this study, pure SnO2 Nanoparticles doped with Cu were synthesized by a chemical precipitation method. Using SnCl2.2H2O, CuCl2.2H2O as raw materials, the materials were annealed at 550°C for 3 hours in order to improve crystallization. The XRD results showed that the samples crystallized in the tetragonal rutile type SnO2 stage. As the average SnO2 crystal size is pure 9nm and varies with the change of Cu doping (0.5%, 1%, 1.5%, 2%, 2.5%, 3%),( 8.35, 8.36, 8.67, 9 ,7, 8.86)nm respectively an increase in crystal size to 2.5% decreases at this rate and that the crystal of SnO2 does not change with the introduction of Cu, and S

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Publication Date
Wed Jun 01 2022
Journal Name
Iraqi Journal Of Physics
Theoretical Investigations of Electronic and Optical Properties of Vanadium Doped Wurtzite Zinc Oxide from First Principle Calculation Method
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In this study lattice parameters, band structure, and optical characteristics of pure and V-doped ZnO are examined by employing (USP) and (GGA) with the assistance of First-principles calculation (FPC) derived from (DFT). The measurements are performed in the supercell geometry that were optimized. GGA+U, the geometrical structures of all models, are utilized to compute the amount of energy after optimizing all parameters in the models. The volume of the doped system grows as the content of the dopant V is increased. Pure and V-doped ZnO are investigated for band structure and energy bandgaps using the Monkhorst–Pack scheme's k-point sampling techniques in the Brillouin zone (G-A-H-K-G-M-L-H). In the presence of high V content, the ban

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Publication Date
Mon Jun 04 2018
Journal Name
Baghdad Science Journal
Effects of Non-Thermal Argon Plasma Produced at Atmospheric Pressure on the Optical Properties of CdO Thin Films
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In this paper the effect of nonthermal atmospheric argon plasma on the optical properties of the cadmium oxide CdO thin films prepared by chemical spray pyrolysis was studied. The prepared films were exposed to different time intervals (0, 5, 10, 15, 20) min. For every sample, the transmittance, Absorbance, absorption coefficient, energy gap, extinction coefficient and dielectric constant were studied. It is found that the transmittance and the energy gap increased with exposure time, and absorption. Absorption coefficient, extinction coefficient, dielectric constant decreased with time of exposure to the argon plasma

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Publication Date
Sat Jul 01 2023
Journal Name
Journal Of Materials Science: Materials In Electronics
Effect of phosphoric acid chemical etching on morphological, structural, electrical, and optical properties of porous GaAs Schottky diodes
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Publication Date
Mon Jan 01 2018
Journal Name
Journal Of Engineering And Applied Sciences
Study the effect of Ultraviolet radiation on the optical properties of pure PC and anthracene doping PC films
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The aim of the present research is concerned with study the effect of UV radiation on the optical properties at wavelengths 254, 365 nm of pure PC and anthracene doping PC films prepared using the cast method for different doping ratio 10-60 mL. Films of pure PC and anthracene doping PC were aged under UV radiation for periods of up to 360 h. It found that the effect of UV radiation at wavelength 254 nm on the optical properties is great than the effect of UV radiation at wavelength 365 nm. Also, it found that the optical energy gap of pure PC and anthracene doping PC films is stable against radiation.

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Publication Date
Fri Jun 29 2018
Journal Name
Journal Of The College Of Education For Women
HandWritten Numerals Recognition System
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  Recognition is one of the basic characteristics of human brain, and also for the living   creatures. It is possible to recognize images, persons, or patterns according to their characteristics. This recognition could be done using eyes or dedicated proposed methods. There are numerous applications for pattern recognition such as recognition of printed or handwritten letters, for example reading post addresses automatically and reading documents or check reading in bank.

      One of the challenges which faces researchers in character recognition field is the recognition of digits, which are written by hand. This paper describes a classification method for on-line handwrit

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Publication Date
Tue Jun 21 2022
Journal Name
مجلة جامعة الانبار للعلوم الانسانية
تطوير المدارس الثانوية باستخدام مفهوم المدرسة المتعلمة
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Publication Date
Fri Jun 01 2007
Journal Name
Journal Of Economics And Administrative Sciences
تقدير النموذج اللوجستي باستخدام اوزان بيز المتسلسل
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تقدير النموذج اللوجستي باستخدام اوزان بيز المتسلسل

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Publication Date
Fri Apr 01 2022
Journal Name
Baghdad Science Journal
Iron (II) Determination in Lipstick Samples using Spectrophotometric and Microfluidic Paper-based Analytical Device (µPADs) Platform via Complexation Reaction with Iron Chelator 1, 10-phenanthroline: A Comparative Study
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This study was undertaken to introduce a fast, accurate, selective, simple and environment-friendly colorimetric method to determine iron (II) concentration in different lipstick brands imported or manufactured locally in Baghdad, Iraq. The samples were collected from 500-Iraqi dinars stores to establish routine tests using the spectrophotometric method and compared with a new microfluidic paper-based analytical device (µPAD) platform as an alternative to cost-effective conventional instrumentation such as Atomic Absorption Spectroscopy (AAS). This method depends on the reaction between iron (II) with iron(II) selective chelator 1, 10-phenanthroline(phen) in the presence of reducing agent hydroxylamine (HOA) and sodium acetate (NaOAc) b

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