This paper concentrates on employing the -difference equations approach to prove another generating function, extended generating function, Rogers formula and Mehler’s formula for the polynomials , as well as thegenerating functions of Srivastava-Agarwal type. Furthermore, we establish links between the homogeneous -difference equations and transformation formulas.

Abstract: A novel design of Mach Zehnder Interferometer (MZI) in terms of using special type of optical fiber that has double clad with graded distribution of the refractive index that can be easily implemented practically was suggested and simulated in this work. The suggested design is compact, rapid, and is simple to be modified and tested. The simulated design contains a MZI of 1546.74 nm of central wavelength that is constructed using special type of double clad optical fiber that has two different numerical apertures. The first aperture will supply single mode propagation via its core, while the second numerical aperture supports a zigzag wave propagation (multimode) in the first clad region. The interferometer’s

الخلاصة ر 􀑧􀑧 ة التبخي 􀑧􀑧 رة بطريق 􀑧􀑧 ة المحض 􀑧􀑧 الرقيق ZnSe درس تأثير التلدين الحراري في بعض الخواص التركيبية والبصرية لأغشية ود 􀑧􀑧 ة حي 􀑧􀑧 لال تقني 􀑧􀑧 ن خ 􀑧􀑧 اعتين م 􀑧􀑧 دة س 􀑧􀑧 373,473 ) م )K راوح 􀑧􀑧 رارة تت 􀑧􀑧 درجات ح 􀑧􀑧 ة ب 􀑧􀑧 550±20 ) والملدن ) nm مك 􀑧􀑧 راري بس 􀑧􀑧 الح ة 􀑧􀑧 الاشعة السينية درست الخواص التركيبية واظھرت بأن الاغشية تمتلك طبيعة بلورية (تركيب مكعب). وبعد اجراء المعامل واص 􀑧􀑧 ا ا

In this study, investigations of structural properties of n-type porous silicon prepared by laser assisted-electrochemical etching were demonstrated. The Photo- electrochemical Etching technique, (PEC) was used to produce porous silicon for n-type with orientation of (111). X-ray diffraction studies showed distinct variations between the fresh silicon surface and the synthesized porous silicon surfaces. Atomic force microscopy (AFM) analysis was used to study the morphology of porous silicon layer. AFM results showed that root mean square (RMS) of roughness and the grain size of porous silicon decreased as etching current density increased. The chemical bonding and structure were investigated by using fourier transformation infrared spec

A metal-assisted chemical etching process employing p-type silicon wafers with varied etching durations is used to produce silicon nanowires. Silver nanoparticles prepared by chemical deposition are utilized as a catalyst in the formation of silicon nanowires. Images from field emission scanning electron microscopy confirmed that the diameter of SiNWs grows when the etching duration is increased. The photoelectrochemical cell's characteristics were investigated using p-type silicon nanowires as working electrodes. Linear sweep voltammetry (J-V) measurements on p-SiNWs confirmed that photocurrent density rose from 0.20 mA cm^-2 to 0.92 mA cm^-2 as the etching duration of prepared SiNWs increased from 15 to 30 min. The

In this work ,porous silicon(PS) substrate has been used to fabricate a sensor of structures(Al/n PSi/n-Si/Al) using infrared laser in a assisting Etching process at several times (8,16,and24 min) and current density(J) of about(25mA/cm2) on silicon(Si) substrates type of n and tested for CO2 gas molecules and then modulated using MATLAB program. J-V characteristic was analyzed. Different parameter determine such as, Porosity (%), Layer thickness (%) and relative permittivity of the fabricated PS substrate. Several shape and sizes of pores were obtained from the scanning electron microscope device such as pore, rectangular and cylindrical structure for infrared illuminated (IR). The Porosity (%) and Layer thickness (%) take control on se

Silicon nanowire arrays (SiNWs) are created utilizing the metal-assisted chemical etching method with an Ag metal as a catalyst and different etching time of 15, 30, and 60 minutes using n-Si (100). Physical properties such as structural, surface morphology, and optical properties of the prepared SiNWs are studied. The diameter of prepared SiNWs ranged from 20 to 280 nm, and the reflectance in the visible part of the wavelength spectrum was less than 1% for all prepared samples. The obtained energy gap of prepared SiNWs was around 2 eV, which is higher than the energy gap of bulk silicon. X-ray diffraction (XRD) has diffraction peaks at 68.70^o for all prepared samples. The heterojunction solar cell was fabricated based on the

Recent phosphorus (P) pollution in the United States, mainly in Maine, has raised some severe concerns over the use of P fertilizer application rates in agriculture. Phosphorus is the second most limiting nutrient after nitrogen and has damaging impacts on crop yield if found to be deficient. Therefore, farmers tend to apply more P than is required to satisfy any P loss after its application at planting. Several important questions were raised in this study to improve P efficiency and reduce its pollution. The objective of this study was to find potential reasons for P pollution in water bodies despite a decrease in potato acreage. Historically, the potato was found to be responsible for P water contamination due to its high P sensitivity a