This study investigates the digestion of cow dung (CD) for biogas production at laboratory scales. The study was carried out through anaerobic fermentation using cow dung as substrate. The digester was operated at ambient temperatures of 39.5 °C for a period of 10 days. The effect of iron powder in controlling the production of hydrogen sulfide (H2S) has been tested. The optimum concentration of iron powder was 4g/L with the highest biogas production. A Q – swatch Nd:YAG laser has been used to mix and homogenize the components of one of the six digesters and accelerate digestion. At the end of digestion, all digestions effluent was subjected to 5 laser pulses with 250mJ/pules to dispose waste biomass.

Improvement of optoelectrical characteristics of phosphorus diffused silicon photodiodes by Q-switched Nd:YAG laser pulses was investigated. Laser pulses have dissolved the precipitation of phosphorus resulted during thermal diffusion process. The experimental data show that responsivity higher than (0.32 A/W) at 850 nm can be achieved after laser annealing with (1.5 MW/cm2) for 6 shots.

Fluorescence excitation by Nd:YAG pumped dye laser and single vibrational level fluorescence
spectra of 1,3 benzodioxole in a supersonic jet have been obtained and interpreted. The previous assignment of
the 0 0
0 band was incorrect. In addition, many other bands involving n20 and n19 vibrations of a2 symmetry were
confirmed. As far as a1 totally symmetric vibration is concerned. The n14 was assigned to be located in the fivemembered
ring whereas n13 seem to be located in the benzene ring as a result of the electronic transition in the
benzene ring which affects n13 and not n14 wavenumber.

Semiconductor laser is used in processing many issues related to the scientific, military, medical, industrial and agricultural fields due to its unique properties such as coherence and high strength where GaN-based components are the most efficient in this field. Current technological developments mention to the strong connection of GaN with sustainable electronic and optoelectronic devices which have high-efficiency. The threshold current density of Al0.1Ga0.9N/GaN triple quantum well laser structure was investigated to determine best values of the parameters affecting the threshold current density that are well width, average thickness of active region, cavity length, reflectivity of cavity mirrors and optical confinement factor. The opt

The research include a pulsed Nd: YAG Laser with (300µs) pulse duration in the TEM00 mode at (1.06µm) wavelength for energies between (0.5-3) J was employed to drill Brass material which is use in industrial applications. The process of drill was assisted by an electric field. This resulted in an increase in the hole aspect ratio by the value (45%) and decrease in the hole taper by the value (25%) of its value under ordinary drilling conditions using the same input energy.

In this work; Silicon dioxide (SiO2) were fabricated by pulsed
laser ablation (PLA). The electron temperature was calculated by
reading the data of I-V curve of Langmuir probe which was
employed as a diagnostic technique for measuring plasma properties.
Pulsed Nd:YA Glaser was used for measuring the electron
temperature of SiO2 plasma plume under vacuum environment with
varying both pressure and axial distance from the target surface. The
electron temperature has been measured experimentally and the
effects of each of pressure and Langmuir probe distance from the
target were studied. An inverse relationship between electron
temperature and both pressure and axial distance was observed.

      In this paper, the optical emission spectrum (OES) technique was used to analyze the spectrum resulting from the (CdO:CoO)  plasma in air, produced by Nd:YAG laser with λ=1064 nm, τ=10 ns, a focal length of 10 cm, and a range of energy of 200-500 mJ. We identified laser-induced plasma parameters such as electron temperature (T_e) using Boltzmann plot method, density of electron (n_e), length of Debye (λ_D), frequency of plasma (f_p), and number of Debye (N_D), using two-Line-Ratio method. At a mixing ratio of X= 0.5, the (CdO:CoO) plasma spectrum was recorded for different energies. The results of plasma parameters caused by laser showed that, with t

we study how to control the dynamics of excitable systems by using the phase control technique.We study how to control nonlinear semiconductor laser dynamics with optoelectronic feedback using the phase control method. The phase control method uses the phase difference between a small.added frequenc y and the main driving frequency to suppress chaos, which leads to various periodic orbits. The experimental studying for the evaluation of chaos modulation behavior are considered in two conditions, the first condition, when one frequency of the external perturbation is varied, secondly, when two of these perturbations are changed. The chaotic system becomes regular under one frequency or two freq

In this work the analysis of laser beam profile system ,using a two dimensional CCD (Charge Coupled Device) arrays, is established. The system is capable of producing video graphics that give a two dimensional image of laser beam. The video graphics system creates color distribution that represent the intensity distribution of the laser beam or the energy profile of the beam. The software used is capable of analyzing and displaying the profile in four different methods that is , color code intensity contouring , intensity shareholding, intensity cross section along two dimension x-y, and three dimensional plot of the beam intensity given in the same display.