Background:

   The research  includes the study and calculation of the modulation function of Optical Semiconductor Fractal  Modulator and spatial frequency for different values of Silicon modulator transmittance percentage(10%,35%,45%,58%),it found the relation between the modulation function of Silicon and spatial frequency, the exponential relation of all values of the transmittance , the best state of modulation function when the value of transmittance is T=58% ,also the research includes the study of the relation of transmittance with different values of refractive index of Silicon . So the research involves building a computer program of output data which would relate to fractal optical modulation made of semiconductor mate

 Anew mathematical formula was proposed to describe the behavior of the extinction coefficient as a function of ambient temperature and wavelengths for some of infrared materials. This formula was derived depending on some experimental data of transmittance spectrum versus wavelengths for many ambient temperatures. The extensive study of the spectrum characteristics and depending on Bose-Einstein distribution led to derive an equation connecting the extinction coefficient or the absorption coefficient with the ambient temperature and wavelengths of the incident rays. The basic assumption in deriving process is the decreasing in transmittance value with the increasing temperature which is only due to the changing in extinction coeffi

In the last years, new non-invasively laser methods were used to detect breast tumors for pre- and postmenopausal females. The methods based on using laser radiation are safer than the other daily used methods for breast tumor detection like X-ray mammography, CT-scanner, and nuclear medicine.  

      One of these new methods is called FDPM (Frequency Domain Photon Migration). It is based on the modulation of laser beam by variable frequency sinusoidal waves. The modulated laser radiations illuminate the breast tissue and received from opposite side.

      In this paper the amplitude and the phase shift of the received signal were calculated according to the orig

One of the troublesome duties in chemical industrial units is determining the instantaneous drop size distribution, which is created between two immiscible liquids within such units. In this work a complete system for measuring instantaneous droplet size is constructed. It consists of laser detection system (1mW He-Ne laser), drop generation system (turbine mixer unit), and microphotography system. Two immiscible liquids, water and kerosene were mixed together with different low volume fractions (0.0025, 0.02) of kerosene (as a dispersed phase) in water (as a continuous phase). The experiments were carried out at different rotational speed (1180- 2090 r.p.m) of the turbine mixer. The Sauter mean diameter of the drops was determined by la

The CIGS/CdS p-n junction thin films were fabricated and deposited at room temperature with rate of deposition 5, and 6 nm secG1 , on ITO glass substrates with 1mm thickness by thermal evaporation technique at high vacuum pressure 2×10G5 mbar, with area of 1 cm2 and Aluminum electrode as back contact. The thickness of absorber layer (CIGS) was 1 µm while the thickness of the window layer CdS film was 300 nm. The X-ray Diffraction results have shown that all thin films were polycrystalline with orientation of 112 and 211 for CIGS thin films and 111 for CdS films. The direct energy gaps for CIGS and CdS thin films were 1.85 and 2.4 eV, respectively. Atomic Force Microscopy measurement proves that both films CIGS and CdS films have nanostru

Studied the optical properties of the membranes CdS thin containing different ratios of ions cadmium to sulfur attended models manner spraying chemical gases on the rules of the glass temperature preparation (350c) were calculated energy gap allowed direct these membranes as observed decrease in the value of the energy gap at reducing the proportion ofsulfur ions as absorption coefficient was calculated

The dye–semiconductor interface between N749 sensitized and zinc semiconductor (ZnSe) has been investigated and studied according to quantum transition theory with focusing on the electron transfer processes from the N749 sensitized (donor) to the ZnSe semiconductor (acceptor). The electron transfer rate constant and the orientation energy were studied and evaluated depended on the polarity of solvents according to refractive index and dielectric constant coefficient of solvents and ZnSe semiconductor. Attention focusing on the influence of orientation energies on the behavior of electron transfer rate constant. Differentdata of rate constant was discussion with orientation energy and effective driving energy for N749-ZnSe system.