In this paper, a new 5G Passive Optical Network (5G-PON) employing all-optical orthogonal frequency division multiplexing (AO-OFDM) is proposed in hybrid bidirectional standard single mode fiber (SSMF)/free space optical (FSO). Additionally, an optical frequency generator (OFG) source is utilized. The proposed model is simulated using VPI photonics software. Analytical modeling and simulations have been conducted for a new approach to generate OFG by cascaded two-frequency modulators and one electro-absorption modulator. A sinusoidal RF signal source is utilized to drive all these modulators. The results reveal that 64 optical multiplexed carriers with a frequency spacing of 30 GHz are generated. These optical carriers have power variations of dB. Moreover, the center wavelength of the generated OFG can be tuned from 1300 nm for upstream transmission to 1577 nm for downstream transmission in the proposed 5G-PON. The proposed network achieves 960 Gbps and 10 Gbps for the downstream and upstream directions, respectively, under different turbulence effects. Furthermore, when 32 AO-OFDM channels are used, the simulation results show that the proposed model can achieve a SSMF length and FSO propagation ranges of 20 km and 2 km, respectively, with bit error rate (BER) ( ).
CdSe alloy has been prepared successfully from its high purity elements. Thin films of this alloy with different thicknesses (300,700)nm have been grown on glass substrates at room temperature under very low pressure (10-5)Torr with rate of deposition (1.7)nm/sec by thermal evaporation technique, after that these thin films have been heat treated under low pressure (10-2)Torr at (473,673)K for one hour. X-ray patterns showed that both CdSe alloy and thin films are polycrystalline and have the hexagonal structure with preferential orientation in the [100] and [002] direction respectively. The optical measurements indicated that CdSe thin films have allowed direct optical energy band gap, and it increases from (1.77- 1.84) eV and from
... Show MoreCadmium sulfide and Aluminum doped CdS thin films were prepared by thermal evaporation technique in vacuum on a heated glass substrates at 373K. A comparison between the optical properties of the pure and doped films was made through measuring and analyzing the transmittance curves, and the effect of the annealing temperature on these properties were estimated. All the films were found to exhibit high transmittance in the visible/ near infrared region from 500nm to 1100nm.The optical band gap energy was found to be in the range 2.68-2.60 eV and 2.65-2.44 eV for CdS and CdS:Al respectively , with changing the annealing temperature from room temperature to 423K.Optical constants such as refractive index, extinction coefficient, and complex di
... Show MoreThe structural, optical properties of cupper indium gallium selenite (CuIn1-xGaxSe) have been studied. CuIn1-xGaxSe thin films for x=0.6 have been prepared by thermal evaporation technique, of 2000±20 nm thickness, with rate of deposition 2±0.1 nm/sec, on glass substrate at room temperature. Heat treatment has been carried out in the range (373-773) K for 1 hour. It demonstrated from the XRD method that all the as-deposited and annealed films have polycrystalline structure of multiphase. The optical measurement of the CIGS thin films conformed that they have, direct allowed energy gap equal to 1.7 eV. The values of some important optical parameters of the studied films such as (absorption coefficient, refractive index, extinction coeffici
... Show MoreCdSe quantum dots possess a tuning energy gap which can control gap values according to the size of the quantum dots, this is made the material able to absorb the wavelengths within visible light. A simple model is provided for the absorption coefficient, optical properties, and optical constants for CdSe quantum dots from the size 10nm to 1nm with the range of visible region between (300-730) nm at room temperature. It turns out that there is an absorption threshold for each wavelength, CdSe quantum dots begin to absorb the visible spectrum of 1.4 nm at room temperature for a wavelength of 300 nm. It has been noted that; when the wavelength is increased, the absorption threshold also increases. This applies to the optical propertie
... Show MoreThe (NiTsPc) thin films operating by vacuum evaporation technique are high recital and good desirable for number of applications, were dumped on glass substrates at room temperature with (200±20nm) thickness and doped with Al at different percentage (0.01,0.03) besides annealing the sample with 200˚C for 1 hours . The stimuluses of aluminum dopant percentage on characterization of the dropped (Ni Ts Pc) thin films were studied through X-ray diffraction in addition from the attained results, were all the films have polycrystalline in nature, as well the fallouts of XRD aimed at film illustrations polycrystalline, depending on the Al ratio doping, the results, SEM exposed the surface is regularly homogeneous. Utilizing first-ideolog
... Show MoreIn this research work, a simulator with time-domain visualizers and configurable parameters using a continuous time simulation approach with Matlab R2019a is presented for modeling and investigating the performance of optical fiber and free-space quantum channels as a part of a generic quantum key distribution system simulator. The modeled optical fiber quantum channel is characterized with a maximum allowable distance of 150 km with 0.2 dB/km at =1550nm. While, at =900nm and =830nm the attenuation values are 2 dB/km and 3 dB/km respectively. The modeled free space quantum channel is characterized at 0.1 dB/km at =860 nm with maximum allowable distance of 150 km also. The simulator was investigated in terms of the execution of the BB84 prot
... Show MoreIn this work, the effect of Zn dopant on structural and optical properties of cadmium oxides, CdO, thin film were studied prepared by pulse laser deposition on glass substrate then annealed at 250 ᵒC in air. All films were examined by X-ray diffraction and UV- visible spectrometer. The XRD analysis shows appearance of new phase identical with hexagonal ZnO additional with cubic phase at high Zn content, which effected on the optical properties. The optical energy gap increase from 2.45 eV to 2.70 eV with increasing Zn content from 0 to 40 %.