The research  includes the study and calculation of the modulation function of Optical Semiconductor Fractal  Modulator and spatial frequency for different values of Silicon modulator transmittance percentage(10%,35%,45%,58%),it found the relation between the modulation function of Silicon and spatial frequency, the exponential relation of all values of the transmittance , the best state of modulation function when the value of transmittance is T=58% ,also the research includes the study of the relation of transmittance with different values of refractive index of Silicon . So the research involves building a computer program of output data which would relate to fractal optical modulation made of semiconductor mate

Abstract: Under high-excitation irradiance conditions to induce fluorescence, the dependence of photobleaching of Coumarin 307 (C307) and acriflavine (ACF) laser dyes in liquid and solid phases have been studied. A cw LD laser source of 1 mW and 407 nm wavelength was used as an exciting source. For one hour exposure time, it was found that the solid dye samples suffer photobleaching more than the liquid dye samples. This is because in liquid solutions the dye molecules can circulate during the irradiation, while the photobleaching is a serious problem when the dye is incorporated into solid matrix and cannot circulate.

The relation between the output power and wavelengths for a 532nm 3W frequency doubled diode pumped solid state laser pumped Ti:Sapphire crystal is investigated. A 20 femtosecond pulse at 800 nm is obtained. A 320 mW is found to be the highest power at 800nm. Below this wavelength value and above the power was found to deviate from highest output value.

CdS films were prepared by thermal evaporation technique at thickness 1 µm on glass substrates and these films were doped with indium (3%) by thermal diffusion method. The electrical properties of these have been investigated in the range of diffusion temperature (473-623 K)> Activation energy is increased with diffusion temperature unless at 623 K activation energy had been decreased. Hall effect results have shown that all the films n-type except at 573 and 623 K and with increase diffusion temperature both of concentration and mobility carriers were increased.

The effect of different Ti additions on the microstructure of Al-Ti alloy prepared by powder metallurgy was investigated. A certain amount of Ti (10wt%, 15wt%, and 20wt%) were added to aluminium and the tests like microhardness, density, scanning electron microscope (SEM), optical microscope (OM) and X-Ray Diffraction (XRD) were conducted to determine the influence of different Ti additives on the Al-Ti alloy properties and microstructure. The results show that the grains of α-Al changed from large grains to roughly spherical and then to small rounded grains with increasing Ti content, the micro-hardness of the alloy increases with increasing Ti, and XRD results confirm the formation of TiAl₃ intermetallic co

 The power factors and electronic thermal conductivities in bismuth telluride (Bi2Te3), lead-telluride (PbTe), and gallium arsenide (GaAs) at room temperature (300K) quantum wires and quantum wells are theoretically investigated. Our formalism rigorously takes into account modification of these power factors and electronic thermal conductivities in free-surface wires and wells due to spatial confinement. From our numerical results, we predict a significant increase of the power factor in quantum wires with diameter w=20 Ã…. The increase is always stronger in quantum wires than in quantum wells of the corresponding dimensions. An unconfined phonon distribution assumed based on the bulk lattice thermal conductivity is then employed