In this paper the effects of the contact material on the photovoltaic (PV) characteristics of p-NiO:Au/n-Si solar cells fabricated by using the pulsed laser deposition (PLD) technique had been studied. It shown the p-NiO:Au/n-Si could be successfully used to construct and improve the performance of solar cells by using Au. The conversion efficiency was increased comparable with p-NiO/n-Si solar cells. In this case the NiO:Au layer acts as a hole collector as well as a barrier for charge recombination.

Increased downscaling of CMOS circuits with respect to feature size and threshold voltage has a result of dramatically increasing in leakage current. So, leakage power reduction is an important design issue for active and standby modes as long as the technology scaling increased. In this paper, a simultaneous active and standby energy optimization methodology is proposed for 22 nm sub-threshold CMOS circuits. In the first phase, we investigate the dual threshold voltage design for active energy per cycle minimization. A slack based genetic algorithm is proposed to find the optimal reverse body bias assignment to set of noncritical paths gates to ensure low active energy per cycle with the maximum allowable frequency at the optimal supply vo

Hueckel edge detector study using binary step edge image is presented. The standard algorithm that Hueckel presented, in his paper without any alteration is adopted. This paper studies a fully analysis for the algorithm efficiency, time consuming and the expected results with slide window size and edge direction. An analysis for its behavior with the changing of the slide window size (disk size) is presented. The best result is acquired when the window size equals to four pixel.  

The -mixing of  - transition in Er 168 populated in  Er(n,n ) Er 168 168  reaction is calculated in the present work by using a2- ratio method. This method has used in previou studies [4, 5, 6, 7] in case that the second transition is pure or for that transition which can be considered as pure only, but in one work we applied this method for two cases, in the first one for pure transition and in the 2nd one for non pure transitions. We take into accunt the experimental a2- coefficient for previous works and -values for one transition only [1]. The results obtained are, in general, in agood agreement within associated errors, with those reported previously [1], the discrepancies that occur are due to in

In this paper we introduce and study the concepts of semisimple gamma modules , regular gamma modules and fully idempotent gamma modules as a generalization of semisimple ring. An module is called fully idempotent (semisimple , regular) if for all submodule of (every submodule is a direct summand, for each , there exists and such that . We study some properties and relationships between them.

In this work we study gamma modules which are implying full stability or implying by full stability. A gamma module is fully stable if for each gamma submodule of and each homomorphism of into . Many properties and characterizations of these classes of gamma modules are considered. We extend some results from the module to the gamma module theories.