Dans la langue française, une forme d'auxiliarité, composée de deux éléments cohérents l'auxiliant et l'auxilié, fournit, en effet, à la phrase une diversité significative et structurale. L'auxiliarité, renvoie à l'unification de deux éléments grammaticaux afin de localiser l'énoncé sur l'axe du temps, d'aspect ou de mode. É. Benveniste définit l'auxiliarité en : « Il s'agit d'une forme linguistique unitaire qui se réalise, à travers des paradigmes entiers, en  deux éléments, dont chacun assume une partie des fonctions grammaticales, et qui sont à la fois liés et autonomes, distincts et complémentaires »[1]. Ces deux éléments d'auxiliarité possèden

     In this paper, we study a new concept of fuzzy sub-module, called  fuzzy socle semi-prime sub-module that is a generalization the concept of semi-prime fuzzy sub-module and fuzzy of approximately semi-prime sub-module in the ordinary sense.  This leads us to introduce level property which studies the relation between the ordinary and fuzzy sense of approximately semi-prime sub-module. Also, some of its characteristics and notions such as the intersection, image and external direct sum of fuzzy socle semi-prime sub-modules are introduced. Furthermore, the relation between the fuzzy socle semi-prime sub-module and other types of fuzzy sub-module presented.

      The definition of semi-preopen sets were first introduced by "Andrijevic" as were is defined by :Let (X ,  ) be a topological space, and let  A ⊆,    then A is called semi-preopen set if ⊆∘ .        In this paper, we study the properties of semi-preopen sets but by another  definition which is equivalent to the first definition and we also study the relationships among it and (open, α-open, preopen and semi-p-open )sets.

The operating characteristics of optoelectronic devices depend critically on the properties physical of the constituent materials, interesting compound has been focused on this research formed from group III and V of the periodic table. Thin film n-InSb heterjuntion were successfully fabricated on p-Si substrates by thermal evaporation technique at different annealing temperature (as prepared, 400,500,600) °C. The effect of annealing temperature on the structural, surface morphology, optical and optoelectronic properties of InSb films were investigated and studied. The crystal structure of the film was characterized by X-ray diffraction and techniques. AFM techniques inspect the surface morphology of InSb films, the study presented the val

Porous Silicon (PS) layer has been prepared from p-type silicon by electrochemical etching method. The morphology properties of PS samples that prepared with different current density has been study using atom force measurement (AFM) and it show that the Layer of pore has sponge like stricture and the average pore diameter of PS layer increase with etching current density increase .The x-ray diffraction (XRD) pattern indicated the nanocrystaline of the sample. Reflectivity of the sample surface is decrease when etching current density increases because of porosity increase on surface of sample. The photolumenses (PL) intensity increase with increase etching current density. The PL is affected by relative humidity (RH) level so we can use

     In this work, the characterization and application of thin films composite incorporated titanium dioxide (TiO₂) (0.8)% volume ratio for (Rutile) nanostructure with poly [2- methoxy-5-(2’-ethylhexoxy-p-phenylene vinylene] (MEH-PPV) were deposited by a spin-coating technique. The optical properties for deposited (MEH-PPV/TiO₂) nanocomposite thin films have two peaks which are the Q-band in the visible region and B-band in ultraviolet. This study shows that the absorption spectrum of organic polymer mixing with TiO₂ increased with increasing the volume ratios TiO₂. The I-V characteristic of nanocomposite thin films shows that the current at dark and light condition

Thermal evaporation method has used for depositing CdTe films
on corning glass slides under vacuum of about 10-5mbar. The
thicknesses of the prepared films are400 and 1000 nm. The prepared
films annealed at 573 K. The structural of CdTe powder and prepared
films investigated. The hopping and thermal energies of as deposited
and annealed CdTe films studied as a function of thickness. A
polycrystalline structure observed for CdTe powder and prepared
films. All prepared films are p-type semiconductor. The hopping
energy decreased as thickness increased, while thermal energy
increased.

Photovoltaic devices (PVs) were fabricated by spray-coating an ink of copper indium diselenide CuInSeR 2 R(CIS) nanocrystals as the light-absorbing layer. Without high-temperature post-deposition annealing, PVs were made on glass substrates with power conversion efficiencies of up to 1.5% and 0.9%, for Au and Mo coated respectively, under AM 1.5 illumination. UV–Vis spectrophotometer in the wavelength range 350–1500 nm. X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS) analysis it is evident that CuInSeR 2 R have the chalcopyrite structure as the major phase and no secondary phase with a preferred orientation along (112) direction and The atomic ratio of Cu : In : Se in the nanocrystals is nearly 1 : 1 : 2.