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Enhancement of hydrothermally Co <sub>3</sub> O <sub>4</sub> thin films as H <sub>2</sub> S gas sensor by loading yttrium element
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The gas sensing properties of Co3O4and Co3O4:Y nano structures were investigated. The films were synthesized using the hydrothermal method on a seeded layer. The XRD, SEM analysis and gas sensing properties were investigated for Co3O4and Co3O4:Y thin films. XRD analysis shows that all films are polycrystalline in nature, having a cubic structure, and the crystallite size is (11.7)nm for cobalt oxide and (9.3)nm for the Co3O4:10%Y. The SEM analysis of thin films obviously indicates that Co3O4possesses a nanosphere-like structure and a flower-like structure for Co3O4:Y.The sensitivity, response time and recovery time to a H2S reducing gas were tested at different operating temperatures. The resistance changes with exposure to the test gas. The results reveal that the Co3O4:10%Ypossesses the highest sensitivity around 80% at a 100oC operating temperature when exposed to the reducing gas H2S with 0.8sec for both recovery and response times. Cobalt

Publication Date
Tue Jun 01 2021
Journal Name
Iraqi Journal Of Physics
Influence of Laser Energy on the Structural and Optical Properties of (CdO):(CoO) Thin Films Produced by Laser-Induced Plasma (LIP)
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In this work, (CdO)1-x (CoO)x thin films were prepared on glass slides by laser-induced plasma using Nd:YAG laser with (λ=1064 nm) and duration (9 ns) at different laser energies (200-500 mJ) with ratio (x=0.5), The influence of laser energy on structural and optical properties has been studied. XRD patterns show the films have a structure of polycrystalline wurtzite. As for AFM tests results for the topography of the surface of the film, where the results showed that the grain size and the average roughness increase with increasing laser energy. The optical properties of all films were also studied and the results showed that the absorption coefficient for within the wavelength range (280-1100 nm), The value of the optical power gap fo

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Publication Date
Fri Sep 09 2022
Journal Name
Journal Of Ovonic Research
The effects of CuO doping on structural, electrical and optical properties of CdO thin films deposited by pulsed laser deposition technique
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Thin films of (CdO)x (CuO)1-x (where x = 0.0, 0.2, 0.3, 0.4 and 0.5) were prepared by the pulsed laser deposition. The CuO addition caused an increase in diffraction peaks intensity at (111) and a decrease in diffraction peaks intensity at (200). As CuO content increases, the band gap increases to a maximum of 3.51 eV, maximum resistivity of 8.251x 104 Ω.cm with mobility of 199.5 cm2 / V.s, when x= 0.5. The results show that the conductivity is ntype when x value was changed in the range (0 to 0.4) but further addition of CuO converted the samples to p-type.

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Publication Date
Tue Jan 01 2019
Journal Name
Indian Journal Of Public Health Research &amp; Development
Effects of Artificial Aging on Some Properties of Room-Temperature-Vulcanized Maxillofacial Silicone Elastomer Modified by Yttrium Oxide Nanoparticles
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Abstract Background: The daily usage of maxillofacial prostheses causes them to mechanically deteriorate with time. This study was aimed to evaluate the reinforcement of VST50F maxillofacial silicone by using yttrium oxide (Y2O3) nanoparticles (NPs) to resist aging and mechanical deterioration. Materials and Method: Y2O3 NPs (30–45nm) were loaded into VST50F maxillofacial silicone in two weight percentages (1 and 1.5 wt%), which were predetermined in a pilot study as the best rates for improving tear strength with minimum increase in hardness values. A total of 120 specimens were prepared and divided into the control and experimental groups (with 1 and 1.5 wt% Y2O3 addition). Each group included 40 specimens, 10 specimens for each paramet

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Publication Date
Wed Jan 01 2014
Journal Name
International Journal Of Innovative Research In Science, Engineering And Technology
EFFECT AMBIENT OXIDATION ON STRUCTURAL AND OPTICAL PROPERTIES OF COPPER OXIDE THIN FILMS
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The structural, optical properties of copper oxide thin films ( CuO) thin films which have been prepared by thermal oxidation with exist air once and oxygen another have been studied. Structural analysis results of Cu thin films demonstrate that the single phase of Cu with high a crystalline structure with a preferred orientation (111). X-ray diffraction results confirm the formation of pure (CuO) phase in both methods of preparation. The optical constant are investigated and calculated such as absorption coefficient, refractive index, extinction coefficient and the dielectric constants for the wavelengths in the range (300-1100) nm.

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Publication Date
Thu Sep 30 2021
Journal Name
Iraqi Journal Of Science
Dielectric and gas sensing properties of in situ electrochemically polymerized PPy-MgO-WO3 nanocomposite films
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     A polypyrrole-based ammonia-detection gas sensor was studied in this work. Under a 1.6 V electrodeposition potential, polypyrrole (PPy) was electrochemically synthesized from an aqueous solution of 0.1 M pyrrole and 0.1 M oxalic acid. An extension to the polypyrrole films was applied through electrochemical deposition on indium tin oxide (ITO), using the metal oxide nanoparticles of MgO and WO3. These films were investigated for their sensing behavior towards NH3 at different working temperatures and different weight percentages of nanoparticles .The measurements of A.C conductivity were conducted over a frequency range of 101-105 Hz and temperature range of 298-423 K .

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Publication Date
Sun Oct 22 2023
Journal Name
Iraqi Journal Of Science
Asymptotic Stability of Index 2 and 3 Hesenberg Differential Algebraic Equations
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This paper aims to study the asymptotic stability of the equilibrium points of the index 2 and index 3 Hesenberg differential algebraic equations. The problem reformulated to an equivalent explicit differential algebraic equations system, so the asymptotic stability is easily investigated. The singular points such as impasse points and singularity induced bifurcation points are identified in this kind of differential algebraic equations by using conclusion of the explicit differential algebraic equations.

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Publication Date
Sun Oct 22 2023
Journal Name
Iraqi Journal Of Science
Asymptotic Stability of Index 2 and 3 Hesenberg Differential Algebraic Equations
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This paper aims to study the asymptotic stability of the equilibrium points of the index 2 and index 3 Hesenberg differential algebraic equations. The problem reformulated to an equivalent explicit differential algebraic equations system, so the asymptotic stability is easily investigated. The singular points such as impasse points and singularity induced bifurcation points are identified in this kind of differential algebraic equations by using conclusion of the explicit differential algebraic equations.

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Publication Date
Sun Jul 02 2023
Journal Name
Iraqi Journal Of Science
Asymptotic Stability of Index 2 and 3 Hesenberg Differential Algebraic Equations
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This paper aims to study the asymptotic stability of the equilibrium points of the index 2 and index 3 Hesenberg differential algebraic equations. The problem reformulated to an equivalent explicit differential algebraic equations system, so the asymptotic stability is easily investigated. The singular points such as impasse points and singularity induced bifurcation points are identified in this kind of differential algebraic equations by using conclusion of the explicit differential algebraic equations.

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Publication Date
Thu May 28 2020
Journal Name
Iraqi Journal Of Science
Comparison between Horizontal and Vertical OFETs by Using Poly (3-Hexylthiophene) (P3HT) as an Active Semiconductor Layer
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In this paper, a comparison between horizontal and vertical OFET of Poly (3-Hexylthiophene) (P3HT) as an active semiconductor layer (p-type) was studied by using two different gate insulators (ZrO2 and PVA). The electrical performance output (Id-Vd) and transfer (Id-Vg) characteristics were investigated using the gradual-channel approximation model. The device shows a typical output curve of a field-effect transistor (FET). The analysis of electrical characterization was performed in order to investigate the source-drain voltage (Vd) dependent current and the effects of gate dielectric on the electrical performance of the OFET. This work also considered the effects of the

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Publication Date
Thu May 28 2020
Journal Name
Iraqi Journal Of Science
Comparison between Horizontal and Vertical OFETs by Using Poly (3-Hexylthiophene) (P3HT) as an Active Semiconductor Layer
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In this paper, a comparison between horizontal and vertical OFET of Poly (3-Hexylthiophene) (P3HT) as an active semiconductor layer (p-type) was studied by using two different gate insulators (ZrO2 and PVA). The electrical performance output (Id-Vd) and transfer (Id-Vg) characteristics were investigated using the gradual-channel approximation model. The device shows a typical output curve of a field-effect transistor (FET). The analysis of electrical characterization was performed in order to investigate the source-drain voltage (Vd) dependent current and the effects of gate dielectric on the electrical performance of the OFET. This work also considered the effects of the capacitance semiconductor on the performance OFETs. The value

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