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Effect of Red Laser Irradiation on The Optical Properties of Cobalt oxide (CoO<sub>2</sub>) Thin Films deposited via Semi-Computerized Spraying Technique
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Abstract<p>The existing investigation explains the consequence of irradiation of red laser on the optic properties of (CoO<sub>2</sub>) films. The film was equipped by the utilization of semi-computerized spray pyrolysis technique (SCSPT), it is the first time that this technique is used in the preparation and irradiation using a laser in this technique. From the XRD analysis, the crystalline existence with trigonal crystal system was when the received films were processed by continuous red laser (700 nm) with power (>1000mW)for different laser irradiation time using different number of times a laser scan (0, 6, 9, 12, 15 and 18 times) with total irradiation time(0,30,45,60,75,90 min) respectively at room temperature. The optic properties of CoO<sub>2</sub> thin samples was struck by light of red laser. The parameters such as the absorbance, coefficient of absorption coefficient of extinction refractive index, optic conductivity, the realϵ_1 and imaginaryϵ_2part of the dielectric constant of the films rises subsequently by laser irradiation, only the transmittance was decremented with laser ray of light. The optic energy gap was reduced from (1.91eV) without irradiation to (1.57eV) and subsequent laser irradiation, and there is a great alteration of optical energy gap values for photovoltaic (PV) utilization. As the results showed that the laser irradiation method has a clear change in the optical properties with less time and energy than the traditional annealing methods, this is the aim of the study.</p>
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Publication Date
Sun Jun 02 2019
Journal Name
Baghdad Science Journal
Effect of Dopant Concentration on the Structural, Optical and Sensing Properties of (SnO2)1-x(TiO2:CuO)x Sprayed Films
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      Spray pyrolysis technique was subjected to synthesized (SnO2)1-x (TiO2: CuO) x Thin films on different substrates like glass and single crystal silicon using. The structure of the deposited films was studied using x-ray diffraction. A more pronounced diffraction peaks of SnO2 while no peaks of (CuO , TiO2 ) phase appear in the X-ray profiles by increasing of the content of (TiO2 , CuO) in the sprayed films. Mixing concentration (TiO2 , CuO) influences on the size of the crystallites of the SnO2 films ,the size of crystallites of the spray paralyzed oxide films change in regular manner by increasing of (TiO

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Publication Date
Fri Nov 24 2023
Journal Name
Iraqi Journal Of Science
Effect of Annealing temperature on the Structural, Optical and Sensitivity Properties of Nanostructure SnO2 Films to CO2 and NH3 Gas
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In this research, we studied the structural properties of SnO2 films nanostructure which prepared by chemical spray pyrolysis method at room temperature on the rules of glass heated (400oC) with rate of spraying (2.5 ml/ min). The effect of annealing temperaturs (450,500,550,600 and 650oC) for two hours on those properties has been indicated. The results of x-ray diffraction showed that all of the prepared films were polycrystalline with tetragonal type and orientation was (110) for all models before and after annealing, and the annealing led to an increase in the grain size. The full width at half maximum (FWHM) values of the (110) peaks of the films decreased from 1.492o to 1.064o with increasing annealing temperature .The surface morp

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Publication Date
Sun Mar 06 2011
Journal Name
Baghdad Science Journal
Optical Characteristics of CdSSe Films Prepared by Thermal Evaporation Technique
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Thin films of cadmium sulphoselenide (CdSSe) have been prepared by a thermal evaporation method on glass substrate, and with pressure of 4x10-5 mbar. The optical constants such as (refractive index n, dielectric constant ?i,r and Extinction coefficient ?) of the deposition films were obtained from the analysis of the experimental recorded transmittance spectral data. The optical band gap of (CdSSe) films is calculate from (?h?)2 vs. photon energy curve. CdSSe films have a direct energy gap, and the values of the energy gap were found to increase when increasing annealing temperature. The band gap of the films varies from 1.68 – 2.39 eV.

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Publication Date
Mon Nov 01 2021
Journal Name
Iop Conference Series: Earth And Environmental Science
Effect of Spraying With Organic Sulfur and Hydrogen Peroxide on The Growth and Yield of Red Local Onions Allium Cepa L.
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Abstract<p>The study was conducted in the fields of the Department of Horticulture and Landscaping/College of Agriculture/University of Al-Qadisiyah/Al-Nouriah district - for the 2019-2020 agricultural season to study the effect of spraying with organic sulfur and hydrogen peroxide on the growth and yield of onions, Allium cepa L, where the study included two factors: the first factor was spraying organic sulfur at concentration (0, 2)., 4 ml. L-1) and symbol S1, S2, S3 and the second factor spraying with hydrogen peroxide at a concentration (0, 2, 4 ml. L-1) and symbolized by B1, B2, B3 and the interaction between them. A factorial experiment was conducted according to the randomized complete b</p> ... Show More
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Publication Date
Sat Aug 31 2019
Journal Name
Iraqi Journal Of Physics
Manufacturing Zener diode using ZnO-CuO-ZnO/Si structures deposited laser induced plasma technique
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        In this paper Zener diode was manufactured using ZnO-CuO-ZnO/Si heterojunction structure that used laser induced plasma technique to prepare the nanofilms. Six samples were prepared with a different number of laser pulses, started with 200 to 600 pulses on ZnO tablet with fixed the number of laser pulses on CuO tablet at 300 pulses. The pulse energy of laser deposited was 900mJ using ZnO tablet and 600mJ using CuO tablet. All prepared films shown good behavior as Zener diode when using porous silicon as substrate.

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Publication Date
Fri Jul 28 2017
Journal Name
Ibn Al-haitham Journal For Pure And Applied Sciences
Effect of Annealing Temperature on the Electrical Conductivity of Amorphous InAs Thin Films
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   In this research the electrical conductivity measurements were made on the amorphous InAs films prepared by thermal evaporation method in thickness 450 nm and annealed in different temperatures in the range (303- 573) K.        The electrical conductivity (σ) showed a decreasing trend with the increasing annealing temperature, while the activation energies (Ea1, Ea2) showed an opposite trend, where the activation energies are increased with the annealing temperature.

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Publication Date
Tue Sep 17 2013
Journal Name
International Journal Of Engineering And Innovative Technology (ijeit)
Study of Optical Properties (Linear and Nonlinear) and Structures for CdS Thin Film Preparation in Spray Pyrolysis Technique
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Publication Date
Thu Jun 01 2023
Journal Name
Australian Dental Journal
Debonding of LDSVs utilising Er,Cr:YSGG laser irradiation with fractional technique: an in vitro study
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Publication Date
Thu Feb 07 2019
Journal Name
Iraqi Journal Of Laser
Study the Effect of PH Variation on the Particle Size of Sio2 Thin Films
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In this paper, SiO2 nanoparticles thin films were synthesised at different PH values of solution by sol gel method at fixed temperature (25oC) and molar ratio (R =H2O/precursor) of (Tetra Ethyl Ortho Silicate) TEOS as precursor at (R=1). The structure and optical properties of the thin films have been investigated. All thin films were tested by using X-RAY diffraction. All X-RAY spectrum can be indexed as monoclinic structure with strong crystalline (110) plane. The morphological properties of the prepared films were studied by SEM. The results indicate that all films are in nano scale and the particle size around (19-62) nm .The size of silica particles increases with increasing PH value of solution where both the rate of hydrolysis and

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Publication Date
Tue Feb 12 2019
Journal Name
Iraqi Journal Of Physics
Effect of Pb dopant On A.C mechanism of ZnS thin films
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Vacuum evaporation technique was used to prepare pure and doped ZnS:Pb thin films at10% atomic weight of Pb element onto glass substrates at room temperature for 200 nm thickness. Effect of doping on a.c electrical properties such as, a.c conductivity, real, and imaginary parts of dielectric constant within frequency range (10 KHz - 10 MHz) are measured. The frequency dependence of a.c conductivity is matched with correlated barrier hoping especially at higher frequency. Effect of doping on behavior of a.c mechanism within temperature range 298-473 K was studied.

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