In this paper, we investigate prime near – rings with two sided α-n-derivations
satisfying certain differential identities. Consequently, some well-known results
have been generalized. Moreover, an example proving the necessity of the primness
hypothesis is given.

In this paper the centralizing and commuting concerning skew left -derivations and skew left -derivations associated with antiautomorphism on prime and semiprime rings were studied and  the commutativity of Lie ideal under certain conditions were proved.

In the present work, the feasibility of formation near-ideal ohmic behavior of In/n-Si contact efficiently by 300 s duration Nd:YAG pulsed laser processing has been recognized. Several laser pulses energy densities have been used, and the optimal energy density that gives best results is obtained. Topography of the irradiated region was extensively discussed and supported with micrographic illustrations to determine the surface condition that can play the important role in the ohmic contact quality. I-V characteristics in the forward and reverse bias and barrier height measurements have been studied for different irradiated samples to determine the laser energy density that gives best ohmic behavior. Comparing the current results with

Let Y be a"uniformly convex n-Banach space, M be a nonempty closed convex subset of Y, and S:M→M be adnonexpansive mapping. The purpose of this paper is to study some properties of uniform convex set that help us to develop iteration techniques for1approximationjof"fixed point of nonlinear mapping by using the Mann iteration processes in n-Banachlspace.

الخلاصة
١٩٨٢ ) وھي كاتبة روایات بولیسیة من مدینة كرایستتش رتش ف ي - ولدت السیدة نكایو أدیث مارش ( ١٨٩٩
اً وف ي روای ات a د میت a ل یرق a نیوزیلندة وأشتھرت ببطلھا المفتش الأقدم رودری ك أل ین ال ذي یظھ ر ف ي روایتھ ا رج
بضمنھا الموت والخادم الراقص ١٩٤٢ وقد الفت عشرین روایة.
توماس ھو الخادم الراقص الذي تھزه أغنیة مرح ة منبعث ة م ن م ذیاع ف ي غرف ة الت دخین حی ث یرق د ویلی ام
میتاً بعد أن قتلھ أخوه نیكولاس، وھو الذي ی

A new ligand [N-(4-nitrobenzoylamino)-thioxomethyl] phenylalanine is synthesized by reaction of 4-nitrobenzoyl isothiocyanate with phenylalanine (1:1). It is characterized by micro elemental analysis (C.H.N.S.), FT-IR, (UV-Vis) and 1H and 13CNMR spectra. Some metals ions complexes of this ligand were prepared and characterized by FT-IR, UV-Visible spectra, conductivity measurements, magnetic susceptibility and atomic absorption. From results obtained, the following formula [M(NBA)2] where M2+ = Mn, Co, Ni, Cu, Zn, Pd, Cd and Hg, the proposed molecular structure for these complexes as tetrahedral geometry, except copper and palladium complexes are have square planer geometry.

A new ligand [N-(3-acetylphenylcarbamothioyl)-4-chlorobenzamide] (CAD) was synthesized by reaction of 4-Chlorobenzoyl isothiocyanate with 3-amino acetophenone, The ligand was characterized by elemental micro analysis C.H.N. S., FT-IR, UV-Vis and 1H,13C- NMR spectra, some transition metals complexes of this ligand were prepared and characterized by FT-IR, UV-Vis spectra, conductivity measurements, magnetic susceptibility and atomic absorption, From obtained results the molecular formula of all prepared complexes were [M(CAD)2(H2O)2]Cl2 (M+2 =Mn, Co, Ni, Cu, Zn, Cd and Hg),the proposed geometrical structure for all complexes were octahedral.

Four N-substituted citraconisoimides were prepared via dehydration of the corresponding prepared citraconamic acids using N,N\-dicyclohexylcarbodiimide as dehydrating agent. The prepared citraconisoimides were introduced in free radical homopolymerization producing four new poly citraconisoimides. Also the prepared citraconisoimides were introduced in free radical copolymerization with three vinylic monomers including acrylonitrile, methylmethacrylate and methylacrylate producing new copolymers having different physical properties. Moreover two new phenolic resins containing pendent citraconisoimide moiety were prepared via condensation polymerization of N-(hydroxyphenol)citraconisoimide with formaldehyde. The new homopolymers and copoly

Porous silicon (PS) layers were formed on n-type silicon (Si) wafers using Photo- electrochemical Etching technique (PEC) was used to produce porous silicon for n-type with orientation of (111). The effects of current density were investigated at: (10, 20, 30, 40, and50) mA/cm2 with etching time: 10min. X-ray diffraction studies showed distinct variations between the fresh silicon surface and the synthesized porous silicon. The maximum crystal size of Porous Silicon is (33.9nm) and minimum is (2.6nm) The Atomic force microscopy (AFM) analysis and Field Emission Scanning Electron Microscope (FESEM) were used to study the morphology of porous silicon layer. AFM results showed that root mean square (RMS) of roughness and the grain size of p