Preferred Language
Articles
/
bsj-795
Study of the electrical properties of Ion Beam Sputtered thin AlNiCo films
...Show More Authors

The electrical properties of the AlNiCo thin films with thickness (1000oA) deposited on glass substrates using Ion – Beam sputtering (IBS) technique under vacuum <10-6 torr have been studied . Also it studied the effect of annealing temperature from this films , It is found that the effective energy decrease with increase of temperature and the conductivity decrease with increase temperature 323oK but after this degree the conductivity increasing .

Crossref
View Publication Preview PDF
Quick Preview PDF
Publication Date
Mon Oct 01 2012
Journal Name
Iraqi Journal Of Physics
The effect of the etching time on the electrical properties of nano structure silicon
...Show More Authors

This work presents the study of the dark current density and the capacitance for porous silicon prepared by photo-electrochemical etching for n-type silicon with laser power density of 10mw/cm2 and wavelength (650nm) under different anodization time (30,40,50,60) minute. The results obtained from this study shows different chara that different characteristic of porous diffecteristics for the different porous Silicon layers.

View Publication Preview PDF
Publication Date
Sun Jan 01 2017
Journal Name
International Journal Of Latest Trends In Engineering And Technology
Study the effect of number of nozzle on optical and structural properties of sno2 films grown by (apcvd)
...Show More Authors

View Publication Preview PDF
Crossref
Publication Date
Sun Sep 07 2008
Journal Name
Baghdad Science Journal
Study the effect by CO2 laser on some optical properties of (Cd) thin film doping by Ni
...Show More Authors

In this research study the effect of irradiation by (CW) CO2 laser on some optical properties of (Cds) doping by Ni thin films of (1)µm thickness has been prepared by heat evaporation method. (X-Ray) diffraction technique showed the prepared films before and after irradiation are ploy crystalline hexagonal structure, optical properties were include recording of absorbance spectra for prepared films in the range of (400-1000) nm wave lengths, the absorption coefficient and the energy gap were calculated before and after irradiation, finally the irradiation affected (CdS) thin films by changing its color from the Transparent yellow to dark rough yellow and decrease the value absorption coefficient also increase the value of energy gap.

View Publication Preview PDF
Crossref
Publication Date
Tue Dec 01 2009
Journal Name
Al-khwarizmi Engineering Journal
Study the Axail Dispersion Model in Ion Exchange Column
...Show More Authors

A mathematical model is developed which predicates the performance of cylindrical ion exchange bed involving comparing of axial dispersion model for cation exchange column with different assumption, this model permits the performance to predicate the residence time within the bed with the variance, axial dispersion and Pecklet No. to indicated deviation from plug flow model.

      Two type of systems are chosen for positive ions first with divalent ions (Ca+2) to exchange with resin of Na+1form used as application in  water softener units and second with monovalent ions (Na+1) to exchange with resin of H+1 form used as application in deionize water units &n

... Show More
View Publication Preview PDF
Publication Date
Fri Dec 30 2022
Journal Name
Iraqi Journal Of Science
Structural, Optical, and Morphological Study of the Zinc Oxide Nano-Thin Films with Different Thickness Prepared by Pulsed Laser Deposition Technique
...Show More Authors

The goal of this investigation is to prepare zinc oxide (ZnO) nano-thin films by pulsed laser deposition (PLD) technique through Q-switching double frequency Nd:YAG laser (532 nm) wavelength, pulse frequency 6 Hz, and 300 mJ energy under vacuum conditions (10-3 torr) at room temperature. (ZnO) nano-thin films were deposited on glass substrates with different thickness of 300, 600 and 900 nm. ZnO films, were then annealed in air at a temperature of 500 °C for one hour. The results were compared with the researchers' previous theoretical study. The XRD analysis of ZnO nano-thin films indicated a hexagonal multi-crystalline wurtzite structure with preferential growth lines (100), (002), (101) for ZnO nano-thin films with different thi

... Show More
Scopus (2)
Scopus Crossref
Publication Date
Fri Apr 21 2023
Journal Name
Technologies And Materials For Renewable Energy, Environment And Sustainability: Tmrees22fr
Growth and characterization of bi doped Cu2S nano crystalline thin films
...Show More Authors

Nano crystalline copper sulphide (Cu2S) thin films pure and 3% Bi doped were deposited on glass substrate by thermal evaporation technique of thickness 400±20 nm under a vacuum of ~ 2 × 10− 5 mbar to study the influence of annealing temperatures ( as-deposited, and 573) K on structural, surface morphology and optical properties of (Cu2S and Cu2S:3%Bi). (XRD) X-ray diffraction analysis showed (Cu2S and Cu2S:3%Bi) films before and after annealing are polycrystalline and hexagonal structure. AFM measurement approves that (Cu2S and Cu2S:3%Bi) films were Nano crystalline with grain size of (105.05-158.12) nm. The optical properties exhibits good optical absorption for Cu2S:3%Bi films. Decreased of optical band gap from 2.25 to 2 eV after dop

... Show More
View Publication Preview PDF
Scopus Crossref
Publication Date
Thu May 01 2003
Journal Name
Renewable Energy
FT-IR and XPS analysis of a-Si1-xGex:H thin films
...Show More Authors

View Publication
Scopus (14)
Crossref (11)
Scopus Clarivate Crossref
Publication Date
Thu Sep 08 2022
Journal Name
Chalcogenide Letters
Synthesis and characterization of Cu2S:Al thin films for solar cell applications
...Show More Authors

In this work Nano crystalline (Cu2S) thin films pure and doped 3% Al with a thickness of 400±20 nm was precipitated by thermic steaming technicality on glass substrate beneath a vacuum of ~ 2 × 10− 6 mbar at R.T to survey the influence of doping and annealing after doping at 573 K for one hour on its structural, electrical and visual properties. Structural properties of these movies are attainment using X-ray variation (XRD) which showed Cu2S phase with polycrystalline in nature and forming hexagonal temple ,with the distinguish trend along the (220) grade, varying crystallites size from (42.1-62.06) nm after doping and annealing. AFM investigations of these films show that increase average grain size from 105.05 nm to 146.54 nm

... Show More
View Publication Preview PDF
Scopus (7)
Crossref (6)
Scopus Clarivate Crossref
Publication Date
Wed Dec 11 2019
Journal Name
Aip
Cu doping effect on characterization of nano crystalline SnSe thin films
...Show More Authors

A thin film of (SnSe) and SnSe:Cu with various Cu ratio (0,3,5 and 7)% have been prepared by thermal evaporation technique with thickness 400±20 nm on glass substrate at (R.T). The effect of Cu dopants concentration on the structural, morphological, optical and electrical properties of (SnSe) Nano crystalline thin films was explored by using X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive spectroscopy (EDS), UV–Vis absorption spectroscopy and Hall Effect measurement respectively. X-ray diffraction analysis reveal the polycrystalline nature of the all films deposited with orthorhombic structure which possess a preferred orientation along the (111) plane. The crystalline sizes o

... Show More
Scopus (5)
Scopus
Publication Date
Mon Feb 18 2019
Journal Name
Iraqi Journal Of Physics
Indium doped ZnO Urbach energy and dispersion parameters of thin films
...Show More Authors

The characterization of ZnO and ZnO:In thin films were confirmed by spray pyrolysis technique. The films were deposited onto glass substrate at a temperature of 450°C. Optical absorption measurements were also studied by UV-VIS technique in the wavelength range 300-900 nm which was used to calculate the optical constants. The changes in dispersion and Urbach parameters were investigated as a function of In content. The optical energy gap was decreased and the wide band tails were increased in width from 616 to 844 eV as the In content increased from 0wt.% to 3wt.%. The single–oscillator parameters were determined also the change in dispersion was investigated before and after doping.

View Publication Preview PDF
Crossref (2)
Crossref