A nanocrystalline CdS thin film with 100 nm thickness has been prepared by thermal evaporation technique on glass substrate with substrate temperature of about 423 K. The films annealed under vacuum at different annealing temperature 473, 523 and 573 K. The X-ray diffraction studies show that CdS thin films have a hexagonal polycrystalline structure with preferred orientation at (002) direction. Our investigation showed the grain size of thin films increased from 9.1 to 18.9 nm with increasing the annealing temperature. The optical measurements showed that CdS thin films have direct energy band gap, which decreases with increasing the annealing temperature within the range 3.2- 2.85 eV. The absorbance edge is blue shifted. The absorption

In the present work, a first-row divalent d-transition metal obtained from curcumin(Curc) and L-3,4-dihydroxyphenylalanin(L-dopa)have been synthesized which their complexes and characterized by C.H.N, conductance, spectral methods: FT-IR, Ultra–Visible. Magneto-chemical measurements, molar conductance ΛM (1×10−3 mol/L in DMSO):36- 0.84 ohm-1.cm2.mol-1 (non-electrolyte). The data shows that the complexes have the structure [M((II))-(Curc)-(L-dopa)] system. Electronic and magnetic data suggest an octahedral geometry for all complexes in which the (L-dopa) and curcumin act as bidentate ligands. Curcumin coordinated to the metal ions M (II) through the lone pair of electrons of oxygen in 2(C=O) groups. The (L-dopa) coordinated to M (II) a

This paper reports the effect of Mg doping on structural and optical properties of ZnO prepared by pulse laser deposition (PLD). The films deposited on glass substrate using Nd:YAG laser (1064 nm) as the light source. The structure and optical properties were characterized by X-ray diffraction (XRD) and transmittance measurements. The films grown have a polycrystalline wurtzite structure and high transmission in the UV-Vis (300-900) nm. The optical energy gap of ZnO:Mg thin films could be controlled between (3.2eV and 3.9eV). The refractive index of ZnO:Mg thin films decreases with Mg doping. The extinction coefficient and the complex dielectric constant were also investigate.

AlxSb1-x compounds with different aluminum content(x=0.1, 0.3 , 0.5 , 0.7 and 0.9 ) were prepared by mixing the two elements in the appropriate ratios in quartz ampulla which then sealed and put in an oven at 1273 and left 5 hours. The obtained powder were grinded and then pressed in pellets shape which will be the target to prepare thin films samples. AlxSb1-x thin films were synthesized by PLD with ~ 150nm in thickness .The structures of AlxSb1-x powders and thin films were determined using X–ray diffraction. The data revealed that all the prepare AlxSb1-x bulk and thin films have polycrystalline . The results showed that increasing of Al reduced the crystallinity of the prepared samples at the first but then the opposite take pla

A Schiff base ligand (L) was used as primary ligand and potassium anthranilate (Anth) was used as the secondary ligand in the molar ratio M: L:2Anth to synthesize a new platinum(IV) mixed-ligand complex [Pt(L)(Anth)₂]Cl₂. The Schiff base ligand was synthesized by the condensation of 4-Aminoantipyrine with 4-Hydroxybenzaldehyde and was verified as a bidentate ligand. The UV-visible, FT-IR, 1 H NMR, 13 C NMR, CHN elemental analysis, molar conductance, chloride ion determination and melting point measurements were used to characterize the ligand and the complex. The results of the molar conductance showed that the electrolytic behavior was 1:2, where the two chloride ions were present outside the coordination sphere, while the spectroscopi

In this work, two graphene oxide (GO) samples were prepared using the Hummers method with graphite (g) and KMnO4 (g) ratios of 1:3 (GO3) and 1:6 (GO6). The effect of oxidation degree on the structural, electrical, and dielectric properties of the GO samples was investigated. The structures of the GO samples were studied using various techniques, including X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy, scanning electron microscopy (SEM), and energy-dispersive X-ray spectroscopy (EDXS). XRD analysis revealed an increase in the interlayer spacing and a decrease in the number of layers of the samples with increasing oxidant content. The two GO samples have giant permittivity values of ~105 in the low-frequency

The structural, optical and electrical properties of ZnS films prepared by vacuum evaporation technique on glass substrate at room temperature and treated at different annealing temperatures (323, 373, 423)K of thickness (0.5)µm have been studied. The structure of these films is determined by X-ray diffraction (XRD). The X-ray diffraction studies show that the structure is polycrystalline with cubic structure, and there are strong peaks at the direction (111). The optical properties investigated which include the absorbance and transmittance spectra, energy band gab, absorption coefficient, and other optical constants. The results showed that films have direct optical transition. The optical band gab was found to be in the range t