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bsj-4033
Improved throughput of Elliptic Curve Digital Signature Algorithm (ECDSA) processor implementation over Koblitz curve k-163 on Field Programmable Gate Array (FPGA)
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            The widespread use of the Internet of things (IoT) in different aspects of an individual’s life like banking, wireless intelligent devices and smartphones has led to new security and performance challenges under restricted resources. The Elliptic Curve Digital Signature Algorithm (ECDSA) is the most suitable choice for the environments due to the smaller size of the encryption key and changeable security related parameters. However, major performance metrics such as area, power, latency and throughput are still customisable and based on the design requirements of the device.

The present paper puts forward an enhancement for the throughput performance metric by proposing a more efficient design for the hardware implementation of ECDSA. The design raised the throughput to 0.08207 Mbit/s, leading to an increase of 6.95% from the existing design. It also includes the design and implementation of the Universal Asynchronous Receiver Transmitter (UART) module. The present work is based on a 163-bit key-size over Koblitz curve k-163 and secure hash function SHA-1. A serial module for the underlying modular layer, high-speed architecture of Koblitz point addition and Koblitz point multiplication have been considered in this work, in addition to utilising the carry-save-multiplier, modular adder-subtractor and Extended Euclidean module for ECDSA protocols. All modules are designed using VHDL and implemented on the platform Virtex5 xc5vlx155t-3ff1738. Signature generation requires 0.55360ms, while its validation consumes 1.10947288ms. Thus, the total time required to complete both processes is equal to 1.66ms and the maximum frequency is approximately 83.477MHZ, consuming a power of 99mW with the efficiency approaching 3.39 * 10-6.

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Publication Date
Thu Apr 01 2021
Journal Name
Basra Journal Of Science
Organic Field Effect Transistor Based on P3HT with Two Different Gate Dielectrics
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The electrical performance of bottom-gate/top source-drain contact for p-channel organic field-effect transistors (OFETs) using poly(3-hexylthiophene) (P3HT) as an active semiconductor layer with two different gate dielectric materials, Polyvinylpyrrolidone (PVP) and Hafnium oxide (HfO2), is investigated in this work. The output and transfer characteristics were studied for HfO2, PVP and HfO2/PVP as organic gate insulator layer. Both characteristics show a high drain current at the gate dielectric HfO2/PVP equal to -0.0031A and -0.0015A for output and transfer characteristics respectively, this can be attributed to the increasing of the dielectric capacitance. Transcondactance characteristics also studied for the three organic mater

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Publication Date
Tue Dec 01 2009
Journal Name
Journal Of Economics And Administrative Sciences
The importance of improved forests in Iraq and their impact on the economic and social future
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عانت الغابات في العراق قصوراً واضحاً في مجال إشباع حاجة السكان لمنتجاتها الرئيسية المتمثلة بالأخشاب ومنتجاتها الثانوية المتمثلة بالأغصان والأوراق والنباتات الطبيعية والحيوانات البرية ونواتجها الأخرى، مما يتطلب التفكير بمحاولة إيجاد سبل جديدة لحل هذه المشكلة الاقتصادية المرتبطة بعنصريها الحاجة للأخشاب والأموال المخصصة لتطويرها عموماً.

لقد دمرت مساحات كبيرة من الغابات وحرقت وقطعت من

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Publication Date
Thu Jun 01 2023
Journal Name
Iraqi Journal Of Physics
Effect of Organic / Inorganic Gate Materials on the Organic Field-Effect Transistors Performance
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The choice of gate dielectric materials is fundamental for organic field effect transistors (OFET), integrated circuits, and several electronic applications. The operation of the OFET depends on two essential parameters: the insulation between the semiconductor layer and the gate electrode and the capacitance of the insulator. In this work, the electrical behavior of a pentacene-based OFET with a top contact / bottom gate was studied. Organic polyvinyl alcohol (PVA) and inorganic hafnium oxide (HfO2) were chosen as gate dielectric materials to lower the operation voltage to achieve the next generation of electronic applications. In this study, the performance of the OFET was studied using monolayer and bilayer gate insulators. To mo

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Publication Date
Thu Jun 01 2023
Journal Name
Iraqi Journal Of Physics
Effect of Organic / Inorganic Gate Materials on the Organic Field-Effect Transistors Performance
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The choice of gate dielectric materials is fundamental for organic field effect transistors (OFET), integrated circuits, and several electronic applications. The operation of the OFET depends on two essential parameters: the insulation between the semiconductor layer and the gate electrode and the capacitance of the insulator. In this work, the electrical behavior of a pentacene-based OFET with a top contact / bottom gate was studied. Organic polyvinyl alcohol (PVA) and inorganic hafnium oxide (HfO2) were chosen as gate dielectric materials to lower the operation voltage to achieve the next generation of electronic applications. In this study, the performance of the OFET was studied using monolayer and bilayer gate insulators.

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Publication Date
Sun Jun 01 2014
Journal Name
Baghdad Science Journal
Study of growth curve and morphological change for Trichomonas vaginalis parasite in the tow culture media
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The objective of this study was shed light for cultivation and maintenance of Trichomonas vaginalis parasite growth after isolated it by vaginal swaps from females suffering vaginitis and abnormal vaginal discharges in these media CPLM and TAB media to detect growth curve, morphological changes and viability of parasite in the two culture media, together with effect of sheep and bovine serum on the growth of it. The results of this studies were showed there was abtaine differences between the two types of media , The maximum growth of parasite was in TAB medium after 72 hours incubation with use of bovine serum, while such growth was maximized after 144 hours incubation with the use of sheep serum. In CPLM medium, a maximum gro

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Publication Date
Sat Oct 01 2022
Journal Name
Baghdad Science Journal
Offline Signature Biometric Verification with Length Normalization using Convolution Neural Network
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Offline handwritten signature is a type of behavioral biometric-based on an image. Its problem is the accuracy of the verification because once an individual signs, he/she seldom signs the same signature. This is referred to as intra-user variability. This research aims to improve the recognition accuracy of the offline signature. The proposed method is presented by using both signature length normalization and histogram orientation gradient (HOG) for the reason of accuracy improving. In terms of verification, a deep-learning technique using a convolution neural network (CNN) is exploited for building the reference model for a future prediction. Experiments are conducted by utilizing 4,000 genuine as well as 2,000 skilled forged signatu

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Publication Date
Tue Dec 13 2022
Journal Name
Lecture Notes In Networks And Systems
Design and FPGA Implementation of Matrix Multiplier Using DEMUX-RCA-Based Vedic Multiplier
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Publication Date
Wed May 06 2015
Journal Name
16th Conference In Natural Science And Mathematics
Efficient digital Image filtering method based on fuzzy algorithm
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Recently, Image enhancement techniques can be represented as one of the most significant topics in the field of digital image processing. The basic problem in the enhancement method is how to remove noise or improve digital image details. In the current research a method for digital image de-noising and its detail sharpening/highlighted was proposed. The proposed approach uses fuzzy logic technique to process each pixel inside entire image, and then take the decision if it is noisy or need more processing for highlighting. This issue is performed by examining the degree of association with neighboring elements based on fuzzy algorithm. The proposed de-noising approach was evaluated by some standard images after corrupting them with impulse

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Publication Date
Wed Jan 01 2020
Journal Name
Journal Of Southwest Jiaotong University
IMPROVED STRUCTURE OF DATA ENCRYPTION STANDARD ALGORITHM
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The Internet is providing vital communications between millions of individuals. It is also more and more utilized as one of the commerce tools; thus, security is of high importance for securing communications and protecting vital information. Cryptography algorithms are essential in the field of security. Brute force attacks are the major Data Encryption Standard attacks. This is the main reason that warranted the need to use the improved structure of the Data Encryption Standard algorithm. This paper proposes a new, improved structure for Data Encryption Standard to make it secure and immune to attacks. The improved structure of Data Encryption Standard was accomplished using standard Data Encryption Standard with a new way of two key gene

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Publication Date
Thu Jan 01 2015
Journal Name
Iraqi Journal Of Science
Improved Rijndael Algorithm by Encryption S-Box Using NTRU Algorithm
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With the wide developments of computer applications and networks, the security of information has high attention in our common fields of life. The most important issues is how to control and prevent unauthorized access to secure information, therefore this paper presents a combination of two efficient encryption algorithms to satisfy the purpose of information security by adding a new level of encryption in Rijndael-AES algorithm. This paper presents a proposed Rijndael encryption and decryption process with NTRU algorithm, Rijndael algorithm is widely accepted due to its strong encryption, and complex processing as well as its resistance to brute force attack. The proposed modifications are implemented by encryption and decryption Rijndael

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