Luffa aegyptiaca is a plant of multi-purpose importance whose usefulness cuts across virtually all areas of life. This study has characterized L. aegyptiaca in Lagos state and determined the mineral, proximate, phytochemical as well as the heavy metal accumulation potential. Samples were collected from the 20 Local Government Areas (LGAs) in Lagos state at 2 samples per location. Genetic similarity and intra-specific variation in 40 samples of L. aegyptiaca were determined using 3 Random Amplified Polymorphic DNA (RAPD) primers which yielded a total of 42 markers of which 25 was polymorphic. The maximum number of bands (14) was produced by OPC4 while the minimum (7) were produced by OPAF20. Percentage polymorphisms were 70% (OPAF20), 82.4% (OPC4) and 68.4% (OPC6) with an average value of 73.6%. The result from a genetic diversity study was scored to generate a dendrogram using NTsys (2.0j). Phytochemical, proximate, Mineral and the heavy metal study showed the presence of Flavonoid, Saponin; Carbohydrate, protein; Sodium (Na), Calcium (Ca) and Chromium, Iron, Copper, Zinc, Lead among others. The nutritional composition and the potentials of the RAPD marker in distinguishing intra-specific variation in Luffa aegyptiaca were highlighted in this study.
This work focuses on the preparation of pure nanocrystalline SnO2 and SnO2:Cu thin films on cleaned glass substrates utilizing a sol-gel spin coating and chemical bath deposition (CBD) procedures. The primary aim of this study is to investigate the possible use of these thin films in the context of gas sensor applications. The films underwent annealing in an air environment at a temperature of 500 ◦C for duration of 60 minutes. The thickness of the film that was deposited may be estimated to be around 300 nm. The investigation included an examination of the structural, optical, electrical, and sensing characteristics, which were explored across various preparation circumstances, specifically focusing on varied
... Show MoreThin films of (CuO)x(ZnO)1-x composite were prepared by pulsed laser deposition technique and x ratio of 0≤ x ≤ 0.8 on clean corning glass substrate at room temperatures (RT) and annealed at 373 and 473K. The X-ray diffraction (XRD) analysis indicated that all prepared films have polycrystalline nature and the phase change from ZnO hexagonal wurtzite to CuO monoclinic structure with increasing x ratio. The deposited films were optically characterized by UV-VIS spectroscopy. The optical measurements showed that (CuO)x(ZnO)1-x films have direct energy gap. The energy band gaps of prepared thin films
The current study had investigated how specific physiological parameters and the endurance of offensive skills of elite Iraqi badminton players are influenced using preparatory phase training. The study used a systematic experimental research design to determine the impact of high-intensity interval exercise (HIIE) on technical accuracy and movement efficiency. Maximal oxygen uptake (VO 2 max), blood lactate levels, and other salient physiological variables were taken before and after training. The results indicated that VO 2 max was significantly increased and lactate was reduced which indicated an increase in aerobic and anaerobic capacity. There was also an increased offensive physical endurance among the participants, increased shot eff
... Show MoreEight different Dichloro(bis{2-[1-(4-R-phenyl)-1H-1,2,3-triazol-4-yl-κN3]pyridine-κN})iron(II) compounds, 2–9, have been synthesised and characterised, where group R=CH3 (L2), OCH3 (L3), COOH (L4), F (L5), Cl (L6), CN (L7), H (L8) and CF3 (L9). The single crystal X-ray structure was determined for the L3 which was complemented with Density Functional Theory calculations for all complexes. The structure exhibits a distorted octahedral geometry, with the two triazole ligands coordinated to the iron centre positioned in the equatorial plane and the two chloro atoms in the axial positions. The values of the FeII/III redox couple, observed at ca. −0.3 V versus Fc/ Fc+ for complexes 2–9, varied over a very small potential range of 0.05 V.
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