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The Effect of annealing temperature on the optical properties of (Cu2S)100-x( SnS2 )x thin films
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Thin films of (Cu2S)100-x( SnS2 )x at X=[ 30,40, &50)]% with thickness (0.9±0.03)µm , had been prepared by chemical spray pyrolysis method on glass substrates at 573 K. These films were then annealed under low pressure of(10-2) mbar ,373)423&473)K for one hour . This research includes , studying the the optical properties of (Cu2S)100-x-(SnS2)x at X=[ 30,40, &50)]% .Moreover studying the effect of annealing on their optical properties , in order to fabricate films with high stability and transmittance that can be used in solar cells. The transmittance and absorbance spectra had been recorded in the wavelength range (310 - 1100) nm in order to study the optical properties . It was found that these films had direct optical band gap which decreases with the increasing SnS2 ratio , while it increasing with the increase in the annealing temperature at all ratio

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Publication Date
Tue Feb 28 2023
Journal Name
Iraqi Journal Of Science
Calculating Parameters for Se and Tin Plasmas Produced by Pulsed Nd: YAG Laser
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      In this study, the plasma formed by the preparation of Se and Tin (Sn) using a Nd: YAG laser with a wavelength of 1064 nm in air, which was then studied using the technique of optical emission spectrum, was presented (OES).The laser-induced plasma parameters such an electron temperature (Te) were identified using two-ratio methods, using Stark broadening methods to determine the density of electrons (ne). According to the findings, there is a correlation between the amount of laser energy that is applied and the increase in the emission intensity of the spectral lines. In the case of Se plasma, an increase in laser energy causes a rise in the temperature of the electrons. While increasing the temperature of the elec

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