At a temperature of 300 K, a prepared thin film of Ag doped with different ratios of CdO (0.1, 0.3, 0.5) % were observed using pulse laser deposition (PLD). The laser, an Nd:YAG in ?=1064 nm, used a pulse, constant energy of 600 mJ ,with a repetition rate of 6 Hz and 400 pulses. The effect of CdO on the structural and optical properties of these films was studied. The structural tests showed that these films are of a polycrystalline structure with a preferred orientation in the (002) direction for Ag. The grain size is positively correlated with the concentration of CdO. The optical properties of the Ag :CdO thin film we observed included transmittance, absorption coefficient, and the energy gap in the wavelength range of 300-1100 nm. The prepared films, direct energy gap is negatively correlated to concentration of CdO.
The study effect irradiation on optical properties of film (PVA: CuCL2) prepared by casting method, with thickness of (30±1) μm. And used Cs137 to obtained Gamma ray with energy (662)keV and time irradiation(5,6 and 7) weeks and affectivity (4.3) ci. The spectra absorbance and transmittance register in range (300-1100) nm .
Results show that the optical band gap for (PVA: CuCl2) decreasing after irradiation with gamma ray from (3.2,3.1,3 and 2.7)eV, urbach energy values increase with the increasing time radiation. And the absorption constants (α,k,n,) and the optical conductivity are changing after irradiated with gamma ray .
The energy density state are the powerful factor for evaluate the validity of a material in any application. This research focused on examining the electrical properties of the Se6Te4- xSbx glass semiconductor with x=1, 2 and 3, using the thermal evaporation technique. D.C electrical conductivity was used by determine the current, voltage and temperatures, where the electrical conductivity was studied as a function of temperature and the mechanical electrical conduction were determined in the different conduction regions (the extended and localized area and at the Fermi level). In addition, the density of the energy states in these regions is calculated using the mathematical equations. The constants of energy density states are det
... Show MoreThis contribution aims to investigate volume-dependent thermal and mechanical properties of the two most studied phases of molybdenum nitride (c-MoN and h-MoN) by means of the quasi-harmonic approximation approach (QHA) via first-principles calculations up to their melting point and a pressure of 12 GPa. Lattice constants, band gaps, and bulk modulus at 0 K match corresponding experimental measurements well. Calculated Bader’s charges indicate that Mo–N bonds exhibit a more ionic nature in the cubic MoN phase. Based on estimated Gibbs free energies, the cubic phase presents thermodynamic stability higher than that detected for hexagonl, with no phase transition observed in the selected T–P conditions as detected experimentall
... Show MoreThe research is dealing with the absorption and fluorescence spectra for the hybrid of an Epoxy Resin doped with organic dye Rhodamine (R6G) of different concentrations (5*10-6, 5*10-5, 1*10-5, 1*10-4, 5*10-4) Mol/ℓ at room temperature. The Quantum efficiency Qfm, the rate of fluorescence emission Kfm (s-1), the non-radiative lifetime τfm (s), fluorescence lifetime τf and the Stokes shift were calculated. Also the energy gap (Eg) for each dye concentration was evaluated. The results showed that the maximum quantum effi
... Show MoreIn the present work, a Z-scan technique was used to study the nonlinear optical properties, represented by the nonlinear refractive index and nonlinear absorption coefficients of the Ag nanoparticles. In this technique, a pulsed second harmonic Nd :YAG laser at wavelength 532 nm was used. The results show that the nonlinear refractive index and nonlinear absorption coefficients of the Ag nanoparticles are found to be dependent on the size these nanoparticles.
The effect of annealing temperature (Ta) on the electrical properties like ,D.C electrical conductivity (σ DC), activation energy (Ea),A.C conductivity σa.c ,real and imaginary (ε1,ε2) of dielectric constants ,relaxation time (τ) has been measured of ZnS thin films (350 nm) in thickness which were prepared at room temperature (R.T) using thermal evaporation under vacuum . The results showed that σD.C increases while the activation energy values(Ea) decreases with increasing of annealing temperature.(Ta) from 303- 423 K .
The density of charge carriers (nH) and Hall mobility (μH) increases also with increasing of annealing temperature Hall effect measurements showed that ZnS films were n-type converted to p-type at high annealin
In this work, a reactive DC magnetron sputtering technique was used to prepare TiO2 thin films. The variation in argon and oxygen gases mixing ratios (4:1, 2:1, 1:1, 1:2, 1:4) was used to achieve optimal properties for gas sensing. In addition, an analysis of the optical XRD properties of TiO2 thin films is presented. High-quality and uniform nanocrystalline films were obtained at a working gas pressure of 0.25 mbar and 1:4 (Ar/O2) gas mixture. The optical properties showed a transparent thin film with uniform adherence to the substrate. The average transmission of the TiO2 films deposited on the glass substrates was higher than 95% over the range of 400 to 800 nm.
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