The superconductor compound (YBa2Cu2.8Zn0.2O7+δ) is prepared by solid state reaction (SSR), Sol-gel (SG) and laser Pulse deposition (PLD) methods. We used the X-ray diffraction technique, which shows an orthorhombic crystalline system for all the samples, and increase in the high-phase (Y-123) and decrease in low-phase and vary in proportion according to the method of preparation with the emergence of some impurities. The behavior of the samples in terms of electrical resistance and critical temperature was investigated all samples showed superconducting behavior. The properties of the dielectric (real dielectric constant, imaginary dielectric constant, loss tangent, alternating electrical conductivity) were s

Statin drugs act by inhibiting the enzyme HMG-CoA reductase which is responsible for manufacture of cholesterol and the biosynthesis essential energy production Co-factor (Coenzyme Q10). The aim from this research includes study the effect of statin drugs (Simvastatin and Atorvastatin) on the Coenzyme Q10 using differential pulse polarographic technique at a dropping mercury electrode (DME) and in a mixture of [4:1] methanol-phosphate buffer of pH7.0 as supporting an electrolyte. Prior to this, the behaviors of Simvastatin, Atorvastatin and Coenzyme Q10 were studied separately in their solvents. The half-wave potential (E1/2) of Co Q10 were -0.31volt and -1.37Volt, -1.33 Volt for simvastatin and atorvastatin respectively. A mixture of Co

Thin films were prepared from poly Berrol way Ketrrukemaaih pole of platinum concentrations both Albaarol and salt in the electrolytic Alastontrel using positive effort of 7 volts on the pole and the electrical wiring of the membrane record

The effect of different doping ratio (0.3, 0.5, and 0.7) with thickness in the range 300nmand annealed at different temp.(Ta=RT, 473, 573, 673) K on the electrical conductivity and hall effect measurements of AgInTe2thin film have and been investigated AgAlxIn(1-x) Te2 (AAIT) at RT, using thermal evaporation technique all the films were prepared on glass substrates from the alloy of the compound. Electrical conductivity (σ), the activation energies (Ea1, Ea2), Hall mobility and the carrier concentration are investigated as a function of doping. All films consist of two types of transport mechanisms for free carriers. The activation energy (Ea) decreased whereas electrical conductivity increases with increased doping. Results of Hall Effect

The effect of temperature range from 298 K to 348 K and volume filler content ф on electrical properties of polyethylene PE filled with nickel Ni powders has been investigated. The volume electrical resistivity V  of such composites decreases suddenly by several orders of magnitude at a critical volume concentration (i.e. фc=14.27 Vol.%) ,whereas the dielectric constant   and the A.C electrical conductivity AC  of such composites increase suddenly at a critical volume concentration (i.e. фc=14.27 Vol.%).For volume filler content lower than percolation threshold ф<фc the resistivity decreases with increasing temperature, whereas the dielectric constant and the A.C electrical conductivity of

Cadmium sulfide (CdS) thin films with n-type semiconductor characteristics were prepared by flash evaporating method on glass substrates. Some films were annealed at 250 ^oC for 1hr in air. The thicknesses of the films was estimated to be 0.5µ by the spectrometer measurement. Structural, morphological, electrical, optical and photoconductivity properties of CdS films have been investigated by X-ray diffraction, AFM, the Hall effect, optical transmittance spectra and photoconductivity analysis, respectively. X-ray diffraction (XRD) pattern shows that CdS films are in the stable hexagonal crystalline structure. Using Debye Scherrerś formula, the average grain size for the samples was found to be 26 nm. The transmittance of the

The paper reports the influence of annealing temperature under vacuum for one hour on the some structural and electrical properties of p-type CdTe thin films were grown at room temperature under high vacuum by using thermal evaporation technique with a mean thickness about 600nm. X-ray diffraction analysis confirms the formation of CdTe cubic phase at all annealing temperature. From investigated the electrical properties of CdTe thin films, the electrical conductivity, the majority carrier concentration, and the Hall mobility were found increase with increasing annealing temperatures.

The paper reports the influence of annealing temperature under vacuum for one hour on the some structural and electrical properties of p-type CdTe thin films were grown at room temperature under high vacuum by using thermal evaporation technique with a mean thickness about 600nm. X-ray diffraction analysis confirms the formation of CdTe cubic phase at all annealing temperature. From investigated the electrical properties of CdTe thin films, the electrical conductivity, the majority carrier concentration, and the Hall mobility were found increase with increasing annealing temperatures.