This study was conducted to know the effect of some phenotype characteristics of corn plant on infection by (CSB), using 13 genotypes of corn plant, planting during autumn season 1997 and 1998. The result revealed that the mean of plant height (with male flowering) was (183-219) cm, the mean of leaf No./ plant in all genotypes was (16-18) leaf but the leaf area of plant was (4350-6249) cm2, there were significant differences of phenotype characteristics between genotypes ,the percentage of infection by (CSB) was (5.9-35.9),% the result showed that the phenotype characteristics had non effect on the infection percentage by (CSB) and the correlation coefficient was not significant.

Optical fiber chemical sensor based surface Plasmon resonance for sensing and measuring the refractive index and concentration for Acetic acid is designed and implemented during this work. Optical grade plastic optical fibers with a diameter of 1000μm were used with a diameter core of 980μm and a cladding of 20μm, where the sensor is fabricated by a small part (10mm) of optical fiber in the middle is embedded in a resin block and then the polishing process is done, after that it is deposited with about (40nm) thickness of gold metal and the Acetic acid is placed on the sensing probe.

Thermal evaporation method has used for depositing CdTe films
on corning glass slides under vacuum of about 10-5mbar. The
thicknesses of the prepared films are400 and 1000 nm. The prepared
films annealed at 573 K. The structural of CdTe powder and prepared
films investigated. The hopping and thermal energies of as deposited
and annealed CdTe films studied as a function of thickness. A
polycrystalline structure observed for CdTe powder and prepared
films. All prepared films are p-type semiconductor. The hopping
energy decreased as thickness increased, while thermal energy
increased.

Copper Telluride Thin films of thickness 700nm and 900nm, prepared thin films using thermal evaporation on cleaned Si substrates kept at 300K under the vacuum about (4x10-5 ) mbar. The XRD analysis and (AFM) measurements use to study structure properties. The sensitivity (S) of the fabricated sensors to NO2 and H2 was measured at room temperature. The experimental relationship between S and thickness of the sensitive film was investigated, and higher S values were recorded for thicker sensors. Results showed that the best sensitivity was attributed to the Cu2Te film of 900 nm thickness at the H2 gas.

Thin films of microcrystalline and nanocrystalline -silicon carbide and silicon, where deposited on glass substrate with substrate temperature ranging from 350-400C, with deposition rate 0.5nm per pulse, by laser induced chemical vapor deposition. The deposition induced by TEACO2 laser. The reactant gases (SiH4 and C2H4) photo decompose throughout collision associated multiple photon dissociate. Such inhomogeneous film structure containing crystalline silicon, silicon carbide and amorphous silicon carbide matrix, give rise to a new type of material nanocrystalline silicon carbide in which the optical transmittance is governed by amorphous SiC phase while nanocrystalline grain are responsible for the conduction processes. This new m